Nanotechnology Now

Our NanoNews Digest Sponsors





Heifer International

Wikipedia Affiliate Button


DHgate

Home > Press > Rice's silicon oxide memories catch manufacturers' eye: Use of porous silicon oxide reduces forming voltage, improves manufacturability

This scanning electron microscope image and schematic show the design and composition of new RRAM memory devices based on porous silicon oxide that were created at Rice University.

Credit: Tour Group/Rice University
This scanning electron microscope image and schematic show the design and composition of new RRAM memory devices based on porous silicon oxide that were created at Rice University.

Credit: Tour Group/Rice University

Abstract:
Rice University's breakthrough silicon oxide technology for high-density, next-generation computer memory is one step closer to mass production, thanks to a refinement that will allow manufacturers to fabricate devices at room temperature with conventional production methods.

Rice's silicon oxide memories catch manufacturers' eye: Use of porous silicon oxide reduces forming voltage, improves manufacturability

Houston, TX | Posted on July 10th, 2014

First discovered five years ago, Rice's silicon oxide memories are a type of two-terminal, "resistive random-access memory" (RRAM) technology. In a new paper available online in the American Chemical Society journal Nano Letters, a Rice team led by chemist James Tour compared its RRAM technology to more than a dozen competing versions.

"This memory is superior to all other two-terminal unipolar resistive memories by almost every metric," Tour said. "And because our devices use silicon oxide -- the most studied material on Earth -- the underlying physics are both well-understood and easy to implement in existing fabrication facilities." Tour is Rice's T.T. and W.F. Chao Chair in Chemistry and professor of mechanical engineering and nanoengineering and of computer science.

Tour and colleagues began work on their breakthrough RRAM technology more than five years ago. The basic concept behind resistive memory devices is the insertion of a dielectric material -- one that won't normally conduct electricity -- between two wires. When a sufficiently high voltage is applied across the wires, a narrow conduction path can be formed through the dielectric material.

The presence or absence of these conduction pathways can be used to represent the binary 1s and 0s of digital data. Research with a number of dielectric materials over the past decade has shown that such conduction pathways can be formed, broken and reformed thousands of times, which means RRAM can be used as the basis of rewritable random-access memory.

RRAM is under development worldwide and expected to supplant flash memory technology in the marketplace within a few years because it is faster than flash and can pack far more information into less space. For example, manufacturers have announced plans for RRAM prototype chips that will be capable of storing about one terabyte of data on a device the size of a postage stamp -- more than 50 times the data density of current flash memory technology.

The key ingredient of Rice's RRAM is its dielectric component, silicon oxide. Silicon is the most abundant element on Earth and the basic ingredient in conventional microchips. Microelectronics fabrication technologies based on silicon are widespread and easily understood, but until the 2010 discovery of conductive filament pathways in silicon oxide in Tour's lab, the material wasn't considered an option for RRAM.

Since then, Tour's team has raced to further develop its RRAM and even used it for exotic new devices like transparent flexible memory chips. At the same time, the researchers also conducted countless tests to compare the performance of silicon oxide memories with competing dielectric RRAM technologies.

"Our technology is the only one that satisfies every market requirement, both from a production and a performance standpoint, for nonvolatile memory," Tour said. "It can be manufactured at room temperature, has an extremely low forming voltage, high on-off ratio, low power consumption, nine-bit capacity per cell, exceptional switching speeds and excellent cycling endurance."

In the latest study, a team headed by lead author and Rice postdoctoral researcher Gunuk Wang showed that using a porous version of silicon oxide could dramatically improve Rice's RRAM in several ways. First, the porous material reduced the forming voltage -- the power needed to form conduction pathways -- to less than two volts, a 13-fold improvement over the team's previous best and a number that stacks up against competing RRAM technologies. In addition, the porous silicon oxide also allowed Tour's team to eliminate the need for a "device edge structure."

"That means we can take a sheet of porous silicon oxide and just drop down electrodes without having to fabricate edges," Tour said. "When we made our initial announcement about silicon oxide in 2010, one of the first questions I got from industry was whether we could do this without fabricating edges. At the time we could not, but the change to porous silicon oxide finally allows us to do that."

Wang said, "We also demonstrated that the porous silicon oxide material increased the endurance cycles more than 100 times as compared with previous nonporous silicon oxide memories. Finally, the porous silicon oxide material has a capacity of up to nine bits per cell that is highest number among oxide-based memories, and the multiple capacity is unaffected by high temperatures."

Tour said the latest developments with porous silicon oxide -- reduced forming voltage, elimination of need for edge fabrication, excellent endurance cycling and multi-bit capacity -- are extremely appealing to memory companies.

"This is a major accomplishment, and we've already been approached by companies interested in licensing this new technology," he said.

###

Study co-authors -- all from Rice -- include postdoctoral researcher Yang Yang; research scientist Jae-Hwang Lee; graduate students Vera Abramova, Huilong Fei and Gedeng Ruan; and Edwin Thomas, the William and Stephanie Sick Dean of Rice's George R. Brown School of Engineering, professor in mechanical engineering and materials science and in chemical and biomolecular engineering.

####

About Rice University
Located on a 300-acre forested campus in Houston, Rice University is consistently ranked among the nation's top 20 universities by U.S. News & World Report. Rice has highly respected schools of Architecture, Business, Continuing Studies, Engineering, Humanities, Music, Natural Sciences and Social Sciences and is home to the Baker Institute for Public Policy. With 3,920 undergraduates and 2,567 graduate students, Rice's undergraduate student-to-faculty ratio is about 6-to-1. Its residential college system builds close-knit communities and lifelong friendships, just one reason why Rice has been ranked No. 1 for best quality of life multiple times by the Princeton Review and No. 2 for "best value" among private universities by Kiplinger's Personal Finance.

Follow Rice News and Media Relations via Twitter @RiceUNews

For more information, please click here

Contacts:
David Ruth

713-348-6327

Copyright © Rice University

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related Links

A copy of the Nano Letters paper is available at:

Related News Press

News and information

QEOS and GLOBALFOUNDRIES to Offer Industry’s First CMOS Platform for MillimeterWave Markets: GLOBALSOLUTIONSSM Partnership will enable next-generation wireless technologies for applications in IoT, 5G and automotive September 3rd, 2015

GLOBALFOUNDRIES and Catena Partner to Provide Next-Generation RF Connectivity Solutions for Growing Wireless Markets: Catena Wi-Fi and Bluetooth RF technologies available on GLOBALFOUNDRIES 28nm Super Low Power Process technology September 3rd, 2015

Making nanowires from protein and DNA September 3rd, 2015

Making fuel from light: Argonne research sheds light on photosynthesis and creation of solar fuel September 3rd, 2015

Chip Technology

GLOBALFOUNDRIES and Catena Partner to Provide Next-Generation RF Connectivity Solutions for Growing Wireless Markets: Catena Wi-Fi and Bluetooth RF technologies available on GLOBALFOUNDRIES 28nm Super Low Power Process technology September 3rd, 2015

For 2-D boron, it's all about that base: Rice University theorists show flat boron form would depend on metal substrates September 2nd, 2015

Phagraphene, a 'relative' of graphene, discovered September 2nd, 2015

Nanometrics to Participate in the Citi 2015 Global Technology Conference August 26th, 2015

Memory Technology

New material science research may advance tech tools August 31st, 2015

'Magic' sphere for information transfer: Professor at the Lomonosov Moscow State University made the «magic» sphere for information transfer August 24th, 2015

Superlattice design realizes elusive multiferroic properties: New design sandwiches a polar metallic oxide between an insulating material August 23rd, 2015

High-precision control of nanoparticles for digital applications August 19th, 2015

Discoveries

QEOS and GLOBALFOUNDRIES to Offer Industry’s First CMOS Platform for MillimeterWave Markets: GLOBALSOLUTIONSSM Partnership will enable next-generation wireless technologies for applications in IoT, 5G and automotive September 3rd, 2015

Making nanowires from protein and DNA September 3rd, 2015

Making fuel from light: Argonne research sheds light on photosynthesis and creation of solar fuel September 3rd, 2015

Reversible Writing with Light: Self-assembling nanoparticles take their cues from their surroundings September 3rd, 2015

Announcements

QEOS and GLOBALFOUNDRIES to Offer Industry’s First CMOS Platform for MillimeterWave Markets: GLOBALSOLUTIONSSM Partnership will enable next-generation wireless technologies for applications in IoT, 5G and automotive September 3rd, 2015

GLOBALFOUNDRIES and Catena Partner to Provide Next-Generation RF Connectivity Solutions for Growing Wireless Markets: Catena Wi-Fi and Bluetooth RF technologies available on GLOBALFOUNDRIES 28nm Super Low Power Process technology September 3rd, 2015

Making nanowires from protein and DNA September 3rd, 2015

Making fuel from light: Argonne research sheds light on photosynthesis and creation of solar fuel September 3rd, 2015

Interviews/Book Reviews/Essays/Reports/Podcasts/Journals/White papers

Making nanowires from protein and DNA September 3rd, 2015

Making fuel from light: Argonne research sheds light on photosynthesis and creation of solar fuel September 3rd, 2015

Reversible Writing with Light: Self-assembling nanoparticles take their cues from their surroundings September 3rd, 2015

Silk bio-ink could help advance tissue engineering with 3-D printers September 2nd, 2015

Patents/IP/Tech Transfer/Licensing

An engineered surface unsticks sticky water droplets August 31st, 2015

Developing Component Scale Composites Using Nanocarbons August 26th, 2015

Industrial Nanotech, Inc. Provides Update On Hospital Project, PCAOB Audit, and New Heat Shield™ Line August 24th, 2015

Revolutionary MIT-Developed Nanotechnology Company Showcases at CAMX in Dallas August 20th, 2015

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







Car Brands
Buy website traffic