Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > Press > Leti Demonstrates Ultra-scaled Self-aligned Split-gate Memory Cell With 16nm Gate Length: Benefits Especially for Contactless Applications Include Larger Memory Window, Improved Control of Spacer Memory Gate Shape and Length, And Better Functionality

TEM images of ultra-scaled self-aligned split-gate device, with a memory gate length of 16nm.
TEM images of ultra-scaled self-aligned split-gate device, with a memory gate length of 16nm.

Abstract:
CEA-Leti announced today it has fabricated ultra-scaled split-gate memories with gate length of 16nm, and demonstrated their functionality, showing good writing and erasing performances with memory windows over 6V.

Leti Demonstrates Ultra-scaled Self-aligned Split-gate Memory Cell With 16nm Gate Length: Benefits Especially for Contactless Applications Include Larger Memory Window, Improved Control of Spacer Memory Gate Shape and Length, And Better Functionality

Grenoble, France | Posted on March 13th, 2014

The devices provide several benefits especially for contactless memory applications, such as enlargement of the memory window and increased functionality. Also because of an optimised fabrication step, the devices allow better control of spacer memory gate shape and length.

Split-gate flash memories are made of two transistors: an access transistor and a memory transistor with a charge-trapping layer (nitride, Si nanocrystals etc.). Split-gate architectures use a low-access voltage and minimize drain current during programming, which leads to a decrease of the programming power compared to standard one-transistor NOR memories. Because programming energy decreases when memory gate length decreases, ultra-scaling is particularly relevant for contactless applications.

Memory gate has been reduced down to 16nm thanks to a poly-Si spacer formed on the sidewall of the select transistor. This approach avoids costly lithography steps during fabrication and solves misalignment issues, which are responsible for a strong variation of the electrical performances, such as the memory window.

The main challenges of this self-aligned technology concern the precise control of the spacer memory gate shape and of the memory gate length. Spacer gate has to fulfil two difficult requirements: being as flat as possible in order to get a silicidation surface as large as possible while insuring a functional contact, and getting a steep edge in order to control the drain-junction doping.

####

About CEA-Leti
By creating innovation and transferring it to industry, Leti is the bridge between basic research and production of micro- and nanotechnologies that improve the lives of people around the world. Backed by its portfolio of 2,200 patents, Leti partners with large industrials, SMEs and startups to tailor advanced solutions that strengthen their competitive positions. It has launched more than 50 startups. Its 8,000m≤ of new-generation cleanroom space feature 200mm and 300mm wafer processing of micro and nano solutions for applications ranging from space to smart devices. Letiís staff of more than 1,700 includes 200 assignees from partner companies. Leti is based in Grenoble, France, and has offices in Silicon Valley, Calif., and Tokyo.

For more information, please click here

Contacts:
CEA-Leti
+33 4 38 78 02 26


Agency
+33 6 64 52 81 10

Copyright © CEA-Leti

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Nagoya physicists resolve long-standing mystery of structure-less transition: Nagoya University-led team of physicists use a synchrotron radiation X-ray source to probe a so-called 'structure-less' transition and develop a new understanding of molecular conductors August 21st, 2017

Tokai University research: Nanomaterial wrap for improved tissue imaging August 21st, 2017

Silk could improve sensitivity, flexibility of wearable body sensors August 20th, 2017

The power of perovskite: OIST researchers improve perovskite-based technology in the entire energy cycle, from solar cells harnessing power to LED diodes to light the screens of future electronic devices and other lighting applications August 18th, 2017

Chip Technology

Nagoya physicists resolve long-standing mystery of structure-less transition: Nagoya University-led team of physicists use a synchrotron radiation X-ray source to probe a so-called 'structure-less' transition and develop a new understanding of molecular conductors August 21st, 2017

Silk could improve sensitivity, flexibility of wearable body sensors August 20th, 2017

Freeze-dried foam soaks up carbon dioxide: Rice University scientists lead effort to make novel 3-D material August 16th, 2017

Two Scientists Receive Grants to Develop New Materials: Chad Mirkin and Monica Olvera de la Cruz recognized by Sherman Fairchild Foundation August 16th, 2017

Memory Technology

Surprise discovery in the search for energy efficient information storage August 10th, 2017

Liquid electrolyte contacts for advanced characterization of resistive switching memories July 26th, 2017

Shining rings: A new material emits white light when exposed to electricity: New synthetic approach could spark development of other dynamic materials July 24th, 2017

Pulses of electrons manipulate nanomagnets and store information: Scientists use electron pulses to create and manipulate nanoscale magnetic excitations that can store data July 21st, 2017

Announcements

Nagoya physicists resolve long-standing mystery of structure-less transition: Nagoya University-led team of physicists use a synchrotron radiation X-ray source to probe a so-called 'structure-less' transition and develop a new understanding of molecular conductors August 21st, 2017

Tokai University research: Nanomaterial wrap for improved tissue imaging August 21st, 2017

Silk could improve sensitivity, flexibility of wearable body sensors August 20th, 2017

The power of perovskite: OIST researchers improve perovskite-based technology in the entire energy cycle, from solar cells harnessing power to LED diodes to light the screens of future electronic devices and other lighting applications August 18th, 2017

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project