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Home > Press > Leti Presentation at IEDM 2013 Will Report Phase-Change Memory Developments for Microcontroller Embedded Applications

Abstract:
A CEA-Leti and STMicroelectronics paper at IEDM 2013 in December will present an innovative back-end-of-line (BEOL), phase-change memory (PCM) technology that is positioned to become the dominant new embedded non-volatile memory (NVM) technology in future microcontroller applications.

Leti Presentation at IEDM 2013 Will Report Phase-Change Memory Developments for Microcontroller Embedded Applications

Grenoble, France | Posted on December 7th, 2013

The BEOL memory solution is based on a new Ge-rich Ge2Sb2Te5 material with N- or C-dopants. It is able to optimize the SET performance and the high temperature thermal stability of phase-change memories.

These innovative materials have been extensively characterized through physicochemical analysis and electrical tests and have been integrated in state-of-the-art memory cell prototypes.

The research at Leti shows a breakthrough, fully enabling PCM technology for microcontroller embedded applications, in which data integrity after the peak temperature of reflow soldering must be ensured.

The co-authored paper, "Trade-off Between SET and Data Retention Performance Thanks to Innovative Materials for Phase-Change Memory", will be presented during Session 21 at IEDM 2013 in Washington, D.C., Dec. 9-11.

Emerging BEOL memories offer significant potential for embedded applications because they are independent of baseline CMOS and offer lower cost and improved performance. That makes them a promising, potential future alternative to embedded non-volatile Flash technologies. Issues that remain to be resolved before the technology can be industrialized include manufacturing maturity, understanding failure mechanisms and mitigation strategies.

Another paper written by Leti researchers also will report on innovative memory. It deals with a more explorative emerging resistive-memories technology that is extremely promising for future very low-power applications. The Session 30 paper is titled: "Investigation of the Physical Mechanisms Governing Data Retention in Down to 10nm Nano-Trench Al2O3/CuTeGe Conductive Bridge RAM (CBRAM)."

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About CEA-Leti
By creating innovation and transferring it to industry, Leti is the bridge between basic research and production of micro- and nanotechnologies that improve the lives of people around the world. Backed by its portfolio of 2,200 patents, Leti partners with large industrials, SMEs and startups to tailor advanced solutions that strengthen their competitive positions. It has launched more than 50 startups. Its 8,000m≤ of new-generation cleanroom space feature 200mm and 300mm wafer processing of micro and nano solutions for applications ranging from space to smart devices. Letiís staff of more than 1,700 includes 200 assignees from partner companies. Leti is based in Grenoble, France, and has offices in Silicon Valley, Calif., and Tokyo.

For more information, please click here

Contacts:
CEA-Leti
+33 4 38 78 02 26


Agency
+33 6 64 52 81 10

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