Nanotechnology Now

Our NanoNews Digest Sponsors





Heifer International

Wikipedia Affiliate Button


DHgate

Home > Press > Imec Shows Path Toward Non-Si Devices at IEDM 2012

Comparison of mobility in unstrained and strained Si and Ge p-FinFETs. Unstrained Ge shows degraded mobility w.r.t. strained Si. Strained Ge can improve pFET mobility by 59%
Comparison of mobility in unstrained and strained Si and Ge p-FinFETs. Unstrained Ge shows degraded mobility w.r.t. strained Si. Strained Ge can improve pFET mobility by 59%

Abstract:
At this week's IEEE International Electron Devices Meeting (IEDM 2012), imec addressed key challenges of scaling beyond silicon-channel finFETs. Imec showed that channel mobility can be boosted by growing non-Si channels on a strain relaxed buffer (SRB), and demonstrated excellent scalability potential of the technology. Moreover, imec revealed insight on the unique influence oxide trapping has on the gate stack mobility in High-Mobility Ge and III-V channels.

Imec Shows Path Toward Non-Si Devices at IEDM 2012

San Francisco, CA | Posted on December 11th, 2012

For logic device technology, the industry previously used SiGe source/drain stressors to enhance the Si channel mobility. However, this process is reaching its scalability limits due to lay-out dependent defects. At IEDM 2012, imec demonstrated excellent scalability toward the 1nm/10nm and 7nm nodes with Ge-channel FinFETs through a Si fin replacement process. Imec also delivered significant mobility boosts (of at least 50 percent) when growing a Ge channel on a SiGe 75 percent localized strain relaxed buffer, compared to strained Si channels (*).

Whereas recent work resulted in the reduction of the density of oxide-semiconductor interface traps of III-V and Ge MOS devices, imec presented new evidence of additional trapping of carriers, namely in the gate dielectrics of these non-Si devices. For the first time, imec showed the adverse impact of such oxide border traps on device performance. Imec's research revealed that near-interface (fast) oxide traps can be probed using the AC-gm (AC transconductance) technique. Shallow (fast) oxide traps are believed to be responsible for non-Si MOSFET on-state frequency-dependent transconductance. This, in violation of the frequency invariance pre-requisite, can post a significant problem at circuit level. Imec also mapped out the slow border traps in the high-k dielectrics using the TSCIS (Trap Spectroscopy by Charge Injection and Sensing) technique. Imec demonstrated the charging of slower traps in the high-k dielectric, resulting in a drifting threshold voltage. As a result, a very low overdrive voltage is predicted (Ge/212mV, InGaAs/255mV, ~1/3 of the ITRS spec on Si) for the 10 year-lifetime of devices. Charge interaction with oxide border traps remains a challenge when moving toward non-Si devices.

"With each new technology generation, challenges are immense. And imec has always come up with solutions to extend Moore's law," stated Aaron Thean, director logic program at imec. "Moving on towards the 14nm node and beyond, we are confident that again, we will find solutions for the challenges that lie ahead. We are looking into high-mobility channel materials, such as Ge and III/V compounds, focusing on two main challenges namely how to implement non-Si materials into the device architecture and how to overcome some of the fundamental physics of the gate stack related to passivation."

These results were obtained in cooperation with imec's key partners in its core CMOS programs: Globalfoundries, INTEL, Micron, Panasonic, Samsung, TSMC, Elpida, SK Hynix, Fujitsu, Toshiba/Sandisk, and Sony.

####

About IMEC
Imec performs world-leading research in nanoelectronics. Imec leverages its scientific knowledge with the innovative power of its global partnerships in ICT, healthcare and energy. Imec delivers industry-relevant technology solutions. In a unique high-tech environment, its international top talent is committed to providing the building blocks for a better life in a sustainable society. Imec is headquartered in Leuven, Belgium, and has offices in Belgium, the Netherlands, Taiwan, US, China, India and Japan. Its staff of close to 2,000 people includes more than 600 industrial residents and guest researchers. In 2011, imec's revenue (P&L) was about 300 million euro. Further information on imec can be found at www.imec.be.

Imec is a registered trademark for the activities of IMEC International (a legal entity set up under Belgian law as a "stichting van openbaar nut”), imec Belgium (IMEC vzw supported by the Flemish Government), imec the Netherlands (Stichting IMEC Nederland, part of Holst Centre which is supported by the Dutch Government), imec Taiwan (IMEC Taiwan Co.) and imec China (IMEC Microelectronics (Shangai) Co. Ltd.) and imec India (Imec India Private Limited).

For more information, please click here

Copyright © IMEC

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Multi-million pound project to use nanotechnology to improve safety September 4th, 2015

Magnetic wormhole connecting 2 regions of space created for the first time: The device could have applications in medicine, opening up ways to make MRIs more comfortable for patients September 4th, 2015

Tongfang Global and QD Vision Partner to Bring Wide Color Gamut to Global Television Lines: Color IQTM quantum dots help boost company’s focus on superior color reproduction September 3rd, 2015

QEOS and GLOBALFOUNDRIES to Offer Industry’s First CMOS Platform for MillimeterWave Markets: GLOBALSOLUTIONSSM Partnership will enable next-generation wireless technologies for applications in IoT, 5G and automotive September 3rd, 2015

Chip Technology

GLOBALFOUNDRIES and Catena Partner to Provide Next-Generation RF Connectivity Solutions for Growing Wireless Markets: Catena Wi-Fi and Bluetooth RF technologies available on GLOBALFOUNDRIES 28nm Super Low Power Process technology September 3rd, 2015

For 2-D boron, it's all about that base: Rice University theorists show flat boron form would depend on metal substrates September 2nd, 2015

Phagraphene, a 'relative' of graphene, discovered September 2nd, 2015

Nanometrics to Participate in the Citi 2015 Global Technology Conference August 26th, 2015

Announcements

Multi-million pound project to use nanotechnology to improve safety September 4th, 2015

Magnetic wormhole connecting 2 regions of space created for the first time: The device could have applications in medicine, opening up ways to make MRIs more comfortable for patients September 4th, 2015

Making nanowires from protein and DNA September 3rd, 2015

Making fuel from light: Argonne research sheds light on photosynthesis and creation of solar fuel September 3rd, 2015

Events/Classes

Tongfang Global and QD Vision Partner to Bring Wide Color Gamut to Global Television Lines: Color IQTM quantum dots help boost company’s focus on superior color reproduction September 3rd, 2015

STMicroelectronics Keynotes on the Next MEMS Wave at MIG Conference Asia September 2nd, 2015

JEOL Introduces New Best-in-Class Field Emission SEM September 2nd, 2015

TCL and QD Vision Demonstrate the Future of Wide Color Gamut Television at IFA: Color IQ Based Display is the First Commercially-Branded Television to Present Over 90% of ITU Rec. 2020 Color Gamut September 2nd, 2015

Alliances/Trade associations/Partnerships/Distributorships

Tongfang Global and QD Vision Partner to Bring Wide Color Gamut to Global Television Lines: Color IQTM quantum dots help boost company’s focus on superior color reproduction September 3rd, 2015

QEOS and GLOBALFOUNDRIES to Offer Industry’s First CMOS Platform for MillimeterWave Markets: GLOBALSOLUTIONSSM Partnership will enable next-generation wireless technologies for applications in IoT, 5G and automotive September 3rd, 2015

GLOBALFOUNDRIES and Catena Partner to Provide Next-Generation RF Connectivity Solutions for Growing Wireless Markets: Catena Wi-Fi and Bluetooth RF technologies available on GLOBALFOUNDRIES 28nm Super Low Power Process technology September 3rd, 2015

TCL and QD Vision Demonstrate the Future of Wide Color Gamut Television at IFA: Color IQ Based Display is the First Commercially-Branded Television to Present Over 90% of ITU Rec. 2020 Color Gamut September 2nd, 2015

Research partnerships

QEOS and GLOBALFOUNDRIES to Offer Industry’s First CMOS Platform for MillimeterWave Markets: GLOBALSOLUTIONSSM Partnership will enable next-generation wireless technologies for applications in IoT, 5G and automotive September 3rd, 2015

Turning clothing into information displays September 2nd, 2015

Sustainable nanotechnology center September 1st, 2015

$200K Awarded to Develop In Vitro Lung Test for Toxicity of Inhaled Nanomaterials: In Vitro Lung Test Designed to Protect Human Health and Replace Animal Testing September 1st, 2015

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







Car Brands
Buy website traffic