Nanotechnology Now

Our NanoNews Digest Sponsors



Heifer International

Wikipedia Affiliate Button


android tablet pc

Home > Press > Imec Shows Path Toward Non-Si Devices at IEDM 2012

Comparison of mobility in unstrained and strained Si and Ge p-FinFETs. Unstrained Ge shows degraded mobility w.r.t. strained Si. Strained Ge can improve pFET mobility by 59%
Comparison of mobility in unstrained and strained Si and Ge p-FinFETs. Unstrained Ge shows degraded mobility w.r.t. strained Si. Strained Ge can improve pFET mobility by 59%

Abstract:
At this week's IEEE International Electron Devices Meeting (IEDM 2012), imec addressed key challenges of scaling beyond silicon-channel finFETs. Imec showed that channel mobility can be boosted by growing non-Si channels on a strain relaxed buffer (SRB), and demonstrated excellent scalability potential of the technology. Moreover, imec revealed insight on the unique influence oxide trapping has on the gate stack mobility in High-Mobility Ge and III-V channels.

Imec Shows Path Toward Non-Si Devices at IEDM 2012

San Francisco, CA | Posted on December 11th, 2012

For logic device technology, the industry previously used SiGe source/drain stressors to enhance the Si channel mobility. However, this process is reaching its scalability limits due to lay-out dependent defects. At IEDM 2012, imec demonstrated excellent scalability toward the 1nm/10nm and 7nm nodes with Ge-channel FinFETs through a Si fin replacement process. Imec also delivered significant mobility boosts (of at least 50 percent) when growing a Ge channel on a SiGe 75 percent localized strain relaxed buffer, compared to strained Si channels (*).

Whereas recent work resulted in the reduction of the density of oxide-semiconductor interface traps of III-V and Ge MOS devices, imec presented new evidence of additional trapping of carriers, namely in the gate dielectrics of these non-Si devices. For the first time, imec showed the adverse impact of such oxide border traps on device performance. Imec's research revealed that near-interface (fast) oxide traps can be probed using the AC-gm (AC transconductance) technique. Shallow (fast) oxide traps are believed to be responsible for non-Si MOSFET on-state frequency-dependent transconductance. This, in violation of the frequency invariance pre-requisite, can post a significant problem at circuit level. Imec also mapped out the slow border traps in the high-k dielectrics using the TSCIS (Trap Spectroscopy by Charge Injection and Sensing) technique. Imec demonstrated the charging of slower traps in the high-k dielectric, resulting in a drifting threshold voltage. As a result, a very low overdrive voltage is predicted (Ge/212mV, InGaAs/255mV, ~1/3 of the ITRS spec on Si) for the 10 year-lifetime of devices. Charge interaction with oxide border traps remains a challenge when moving toward non-Si devices.

"With each new technology generation, challenges are immense. And imec has always come up with solutions to extend Moore's law," stated Aaron Thean, director logic program at imec. "Moving on towards the 14nm node and beyond, we are confident that again, we will find solutions for the challenges that lie ahead. We are looking into high-mobility channel materials, such as Ge and III/V compounds, focusing on two main challenges namely how to implement non-Si materials into the device architecture and how to overcome some of the fundamental physics of the gate stack related to passivation."

These results were obtained in cooperation with imec's key partners in its core CMOS programs: Globalfoundries, INTEL, Micron, Panasonic, Samsung, TSMC, Elpida, SK Hynix, Fujitsu, Toshiba/Sandisk, and Sony.

####

About IMEC
Imec performs world-leading research in nanoelectronics. Imec leverages its scientific knowledge with the innovative power of its global partnerships in ICT, healthcare and energy. Imec delivers industry-relevant technology solutions. In a unique high-tech environment, its international top talent is committed to providing the building blocks for a better life in a sustainable society. Imec is headquartered in Leuven, Belgium, and has offices in Belgium, the Netherlands, Taiwan, US, China, India and Japan. Its staff of close to 2,000 people includes more than 600 industrial residents and guest researchers. In 2011, imec's revenue (P&L) was about 300 million euro. Further information on imec can be found at www.imec.be.

Imec is a registered trademark for the activities of IMEC International (a legal entity set up under Belgian law as a "stichting van openbaar nut”), imec Belgium (IMEC vzw supported by the Flemish Government), imec the Netherlands (Stichting IMEC Nederland, part of Holst Centre which is supported by the Dutch Government), imec Taiwan (IMEC Taiwan Co.) and imec China (IMEC Microelectronics (Shangai) Co. Ltd.) and imec India (Imec India Private Limited).

For more information, please click here

Copyright © IMEC

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Scientists reveal breakthrough in optical fiber communications December 21st, 2014

Atom-thick CCD could capture images: Rice University scientists develop two-dimensional, light-sensitive material December 20th, 2014

Oregon researchers glimpse pathway of sunlight to electricity: Collaboration with Lund University uses modified UO spectroscopy equipment to study 'maze' of connections in photoactive quantum dots December 19th, 2014

Instant-start computers possible with new breakthrough December 19th, 2014

Chip Technology

Instant-start computers possible with new breakthrough December 19th, 2014

Switching to spintronics: Berkeley Lab reports on electric field switching of ferromagnetism at room temp December 17th, 2014

Pb islands in a sea of graphene magnetise the material of the future December 16th, 2014

Stanford team combines logic, memory to build a 'high-rise' chip: Today circuit cards are laid out like single-story towns; Futuristic architecture builds layers of logic and memory into skyscraper chips that would be smaller, faster, cheaper -- and taller December 15th, 2014

Announcements

Scientists reveal breakthrough in optical fiber communications December 21st, 2014

Atom-thick CCD could capture images: Rice University scientists develop two-dimensional, light-sensitive material December 20th, 2014

Oregon researchers glimpse pathway of sunlight to electricity: Collaboration with Lund University uses modified UO spectroscopy equipment to study 'maze' of connections in photoactive quantum dots December 19th, 2014

Instant-start computers possible with new breakthrough December 19th, 2014

Events/Classes

Bruker Introduces BioScope Resolve High-Resolution BioAFM System: Featuring PeakForce Tapping for Quantitative Bio-Mechanical Property Mapping December 16th, 2014

TCL Launches World’s Most Advanced TV in the World’s Largest Market: New Quantum Dot TVs with Color IQ™ Optics Deliver OLED-Quality Color at a Fraction of the Price December 15th, 2014

Stanford team combines logic, memory to build a 'high-rise' chip: Today circuit cards are laid out like single-story towns; Futuristic architecture builds layers of logic and memory into skyscraper chips that would be smaller, faster, cheaper -- and taller December 15th, 2014

PETA science consortium to present at Society for Risk Analysis meeting December 10th, 2014

Alliances/Partnerships/Distributorships

SUNY Poly NanoCollege Faculty Member Selected as American Physical Society Fellow: SUNY Poly Associate Professor of Nanoscience Dr. Vincent LaBella Recognized for Significant Technological Innovations that Enable Interactive Learning December 17th, 2014

New 'electronic skin' for prosthetics, robotics detects pressure from different directions December 10th, 2014

SEMATECH Reports Significant Progress in EUV Resist Outgas Testing: Technologists from SEMATECH and JSR demonstrate outgas test results that further enable EUV lithography for high-volume manufacturing readiness December 3rd, 2014

Toward a low-cost 'artificial leaf' that produces clean hydrogen fuel December 3rd, 2014

Research partnerships

Scientists reveal breakthrough in optical fiber communications December 21st, 2014

Oregon researchers glimpse pathway of sunlight to electricity: Collaboration with Lund University uses modified UO spectroscopy equipment to study 'maze' of connections in photoactive quantum dots December 19th, 2014

Unraveling the light of fireflies December 17th, 2014

Scientists trace nanoparticles from plants to caterpillars: Rice University study examines how nanoparticles behave in food chain December 16th, 2014

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More










ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2014 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE