Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > Press > Imec Shows Path Toward Non-Si Devices at IEDM 2012

Comparison of mobility in unstrained and strained Si and Ge p-FinFETs. Unstrained Ge shows degraded mobility w.r.t. strained Si. Strained Ge can improve pFET mobility by 59%
Comparison of mobility in unstrained and strained Si and Ge p-FinFETs. Unstrained Ge shows degraded mobility w.r.t. strained Si. Strained Ge can improve pFET mobility by 59%

Abstract:
At this week's IEEE International Electron Devices Meeting (IEDM 2012), imec addressed key challenges of scaling beyond silicon-channel finFETs. Imec showed that channel mobility can be boosted by growing non-Si channels on a strain relaxed buffer (SRB), and demonstrated excellent scalability potential of the technology. Moreover, imec revealed insight on the unique influence oxide trapping has on the gate stack mobility in High-Mobility Ge and III-V channels.

Imec Shows Path Toward Non-Si Devices at IEDM 2012

San Francisco, CA | Posted on December 11th, 2012

For logic device technology, the industry previously used SiGe source/drain stressors to enhance the Si channel mobility. However, this process is reaching its scalability limits due to lay-out dependent defects. At IEDM 2012, imec demonstrated excellent scalability toward the 1nm/10nm and 7nm nodes with Ge-channel FinFETs through a Si fin replacement process. Imec also delivered significant mobility boosts (of at least 50 percent) when growing a Ge channel on a SiGe 75 percent localized strain relaxed buffer, compared to strained Si channels (*).

Whereas recent work resulted in the reduction of the density of oxide-semiconductor interface traps of III-V and Ge MOS devices, imec presented new evidence of additional trapping of carriers, namely in the gate dielectrics of these non-Si devices. For the first time, imec showed the adverse impact of such oxide border traps on device performance. Imec's research revealed that near-interface (fast) oxide traps can be probed using the AC-gm (AC transconductance) technique. Shallow (fast) oxide traps are believed to be responsible for non-Si MOSFET on-state frequency-dependent transconductance. This, in violation of the frequency invariance pre-requisite, can post a significant problem at circuit level. Imec also mapped out the slow border traps in the high-k dielectrics using the TSCIS (Trap Spectroscopy by Charge Injection and Sensing) technique. Imec demonstrated the charging of slower traps in the high-k dielectric, resulting in a drifting threshold voltage. As a result, a very low overdrive voltage is predicted (Ge/212mV, InGaAs/255mV, ~1/3 of the ITRS spec on Si) for the 10 year-lifetime of devices. Charge interaction with oxide border traps remains a challenge when moving toward non-Si devices.

"With each new technology generation, challenges are immense. And imec has always come up with solutions to extend Moore's law," stated Aaron Thean, director logic program at imec. "Moving on towards the 14nm node and beyond, we are confident that again, we will find solutions for the challenges that lie ahead. We are looking into high-mobility channel materials, such as Ge and III/V compounds, focusing on two main challenges namely how to implement non-Si materials into the device architecture and how to overcome some of the fundamental physics of the gate stack related to passivation."

These results were obtained in cooperation with imec's key partners in its core CMOS programs: Globalfoundries, INTEL, Micron, Panasonic, Samsung, TSMC, Elpida, SK Hynix, Fujitsu, Toshiba/Sandisk, and Sony.

####

About IMEC
Imec performs world-leading research in nanoelectronics. Imec leverages its scientific knowledge with the innovative power of its global partnerships in ICT, healthcare and energy. Imec delivers industry-relevant technology solutions. In a unique high-tech environment, its international top talent is committed to providing the building blocks for a better life in a sustainable society. Imec is headquartered in Leuven, Belgium, and has offices in Belgium, the Netherlands, Taiwan, US, China, India and Japan. Its staff of close to 2,000 people includes more than 600 industrial residents and guest researchers. In 2011, imec's revenue (P&L) was about 300 million euro. Further information on imec can be found at www.imec.be.

Imec is a registered trademark for the activities of IMEC International (a legal entity set up under Belgian law as a "stichting van openbaar nut), imec Belgium (IMEC vzw supported by the Flemish Government), imec the Netherlands (Stichting IMEC Nederland, part of Holst Centre which is supported by the Dutch Government), imec Taiwan (IMEC Taiwan Co.) and imec China (IMEC Microelectronics (Shangai) Co. Ltd.) and imec India (Imec India Private Limited).

For more information, please click here

Copyright © IMEC

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

The power of perovskite: OIST researchers improve perovskite-based technology in the entire energy cycle, from solar cells harnessing power to LED diodes to light the screens of future electronic devices and other lighting applications August 18th, 2017

Gold nanostars and immunotherapy vaccinate mice against cancer: New treatment cures, vaccinates mouse in small proof-of-concept study August 18th, 2017

Researchers printed graphene-like materials with inkjet August 17th, 2017

Candy cane supercapacitor could enable fast charging of mobile phones August 17th, 2017

Chip Technology

Freeze-dried foam soaks up carbon dioxide: Rice University scientists lead effort to make novel 3-D material August 16th, 2017

Two Scientists Receive Grants to Develop New Materials: Chad Mirkin and Monica Olvera de la Cruz recognized by Sherman Fairchild Foundation August 16th, 2017

Surprise discovery in the search for energy efficient information storage August 10th, 2017

GLOBALFOUNDRIES Demonstrates 2.5D High-Bandwidth Memory Solution for Data Center, Networking, and Cloud Applications: Solution leverages 2.5D packaging with low-latency, high-bandwidth memory PHY built on FX-14 ASIC design system August 9th, 2017

Announcements

The power of perovskite: OIST researchers improve perovskite-based technology in the entire energy cycle, from solar cells harnessing power to LED diodes to light the screens of future electronic devices and other lighting applications August 18th, 2017

Gold nanostars and immunotherapy vaccinate mice against cancer: New treatment cures, vaccinates mouse in small proof-of-concept study August 18th, 2017

Researchers printed graphene-like materials with inkjet August 17th, 2017

Candy cane supercapacitor could enable fast charging of mobile phones August 17th, 2017

Events/Classes

FRITSCH Milling and Sizing! Innovations at POWTECH 2017 - Hall 2 Stand 227 August 9th, 2017

Thermo Fisher Scientific Showcases Innovations in Electron Microscopy and Spectroscopy at M&M 2017: New analytical technologies improve workflows for life sciences and materials science researchers August 8th, 2017

Nanometrics Announces Upcoming Investor Events August 3rd, 2017

Arrowhead Pharmaceuticals to Webcast Fiscal 2017 Third Quarter Results July 27th, 2017

Alliances/Trade associations/Partnerships/Distributorships

Oxford Instruments Plasma Technology announces a new partner in Korea August 15th, 2017

Moving at the Speed of Light: University of Arizona selected for high-impact, industrial demonstration of new integrated photonic cryogenic datalink for focal plane arrays: Program is major milestone for AIM Photonics August 10th, 2017

Technology Companies Join Forces for TEM Imaging and Analysis August 3rd, 2017

GLOBALFOUNDRIES and VeriSilicon To Enable Single-Chip Solution for Next-Gen IoT Networks: Integrated solution leverages GFs 22FDX technology to decrease power, area, and cost for NB-IoT and LTE-M applications July 14th, 2017

Research partnerships

Researchers printed graphene-like materials with inkjet August 17th, 2017

Freeze-dried foam soaks up carbon dioxide: Rice University scientists lead effort to make novel 3-D material August 16th, 2017

2-faced 2-D material is a first at Rice: Rice University materials scientists create flat sandwich of sulfur, molybdenum and selenium August 14th, 2017

Moving at the Speed of Light: University of Arizona selected for high-impact, industrial demonstration of new integrated photonic cryogenic datalink for focal plane arrays: Program is major milestone for AIM Photonics August 10th, 2017

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project