Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > Press > Nanodot-based memory sets new world speed record

Abstract:
A team of researchers from Taiwan and the University of California, Berkeley, has harnessed nanodots to create a new electronic memory technology that can write and erase data 10-100 times faster than today's mainstream charge-storage memory products. The new system uses a layer of non-conducting material embedded with discrete (non-overlapping) silicon nanodots, each approximately 3 nanometers across. Each nanodot functions as a single memory bit. To control the memory operation, this layer is then covered with a thin metallic layer, which functions as a "metal gate." The metal gate controls the "on" and "off" states of the transistor. The results are published in the American Institute of Physics' (AIP) journal Applied Physics Letters.

Nanodot-based memory sets new world speed record

College Park, MD | Posted on April 21st, 2012

A team of researchers from Taiwan and the University of California, Berkeley, has harnessed nanodots to create a new electronic memory technology that can write and erase data 10-100 times faster than today's mainstream charge-storage memory products. The new system uses a layer of non-conducting material embedded with discrete (non-overlapping) silicon nanodots, each approximately 3 nanometers across. Each nanodot functions as a single memory bit. To control the memory operation, this layer is then covered with a thin metallic layer, which functions as a "metal gate." The metal gate controls the "on" and "off" states of the transistor. The results are published in the American Institute of Physics' (AIP) journal Applied Physics Letters.

"The metal-gate structure is a mainstream technology on the path toward nanoscale complementary metal-oxide-semiconductor (CMOS) memory technology," said co-author Jia-Min Shieh, researcher, National Nano Device Laboratories, Hsinchu, Taiwan. "Our system uses numerous, discrete silicon nanodots for charge storage and removal. These charges can enter (data write) and leave (data erase) the numerous discrete nanodots in a quick and simple way."

The researchers were able to achieve this new milestone in speed by using ultra-short bursts of green laser light to selectively anneal (activate) specific regions around the metal layer of the metal gate of the memory. Since the sub-millisecond bursts of laser light are so brief and so precise, they are able to accurately create gates over each of the nanodots. This method of memory storage is particularly robust, the researchers explain, because if an individual charge in one of the nano-sites failed, it would barely influence the others. This enables a stable and long-lived data storage platform.

"The materials and the processes used for the devices are also compatible with current main-stream integrated circuit technologies," explains Shieh. "This technology not only meets the current CMOS process line, but can also be applied to other advanced-structure devices."

Article: "Fast Programming Metal-Gate Si Quantum Dot Nonvolatile Memory Using Green Nanosecond Laser Spike Annealing" is published in Applied Physics Letters.

Authors: Yu-Chung Lien (1), Jia-Min Shieh (1,2), Wen-Hsien Huang (1), Cheng-Hui Tu (2), Chieh Wang (2), Chang-Hong Shen (1), Bau-Tong Dai (1), Ci-Ling Pan (3), Chenming Hu (4), and Fu-Liang Yang (1).

(1) National Nano Device Laboratories, Hsinchu, Taiwan
(2) Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Taiwan
(3) Department of Physics, National Tsing Hua University, Hsinchu, Taiwan
(4) Department of Electrical Engineering and Computer Science, University of California, Berkeley

####

For more information, please click here

Contacts:
Charles Blue

301-209-3091

Copyright © American Institute of Physics

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Atomic imperfections move quantum communication network closer to reality June 25th, 2017

Research accelerates quest for quicker, longer-lasting electronics: UC Riverside-led research makes topological insulators magnetic well above room temperatures June 25th, 2017

U.S. Air Force Research Lab Taps IBM to Build Brain-Inspired AI Supercomputing System: Equal to 64 million neurons, new neurosynaptic supercomputing system will power complex AI tasks at unprecedented speed and energy efficiency June 23rd, 2017

Rice U. chemists create 3-D printed graphene foam June 22nd, 2017

Chip Technology

Atomic imperfections move quantum communication network closer to reality June 25th, 2017

Research accelerates quest for quicker, longer-lasting electronics: UC Riverside-led research makes topological insulators magnetic well above room temperatures June 25th, 2017

U.S. Air Force Research Lab Taps IBM to Build Brain-Inspired AI Supercomputing System: Equal to 64 million neurons, new neurosynaptic supercomputing system will power complex AI tasks at unprecedented speed and energy efficiency June 23rd, 2017

Alloying materials of different structures offers new tool for controlling properties June 19th, 2017

Memory Technology

New prospects for universal memory -- high speed of RAM and the capacity of flash: Thin films created at MIPT could be the basis for future development of ReRAM June 17th, 2017

Geoffrey Beach: Drawn to explore magnetism: Materials researcher is working on the magnetic memory of the future April 25th, 2017

New ultrafast flexible and transparent memory devices could herald new era of electronics April 1st, 2017

Information storage with a nanoscale twist: Discovery of a novel rotational force inside magnetic vortices makes it easier to design ultrahigh capacity disk drives March 28th, 2017

Discoveries

Atomic imperfections move quantum communication network closer to reality June 25th, 2017

Research accelerates quest for quicker, longer-lasting electronics: UC Riverside-led research makes topological insulators magnetic well above room temperatures June 25th, 2017

Rice U. chemists create 3-D printed graphene foam June 22nd, 2017

Enhanced photocatalytic activity by Cu2O nanoparticles integrated H2Ti3O7 nanotubes June 21st, 2017

Announcements

Atomic imperfections move quantum communication network closer to reality June 25th, 2017

Research accelerates quest for quicker, longer-lasting electronics: UC Riverside-led research makes topological insulators magnetic well above room temperatures June 25th, 2017

U.S. Air Force Research Lab Taps IBM to Build Brain-Inspired AI Supercomputing System: Equal to 64 million neurons, new neurosynaptic supercomputing system will power complex AI tasks at unprecedented speed and energy efficiency June 23rd, 2017

Rice U. chemists create 3-D printed graphene foam June 22nd, 2017

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project