Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button


DHgate

Home > Press > Nanodot-based memory sets new world speed record

Abstract:
A team of researchers from Taiwan and the University of California, Berkeley, has harnessed nanodots to create a new electronic memory technology that can write and erase data 10-100 times faster than today's mainstream charge-storage memory products. The new system uses a layer of non-conducting material embedded with discrete (non-overlapping) silicon nanodots, each approximately 3 nanometers across. Each nanodot functions as a single memory bit. To control the memory operation, this layer is then covered with a thin metallic layer, which functions as a "metal gate." The metal gate controls the "on" and "off" states of the transistor. The results are published in the American Institute of Physics' (AIP) journal Applied Physics Letters.

Nanodot-based memory sets new world speed record

College Park, MD | Posted on April 21st, 2012

A team of researchers from Taiwan and the University of California, Berkeley, has harnessed nanodots to create a new electronic memory technology that can write and erase data 10-100 times faster than today's mainstream charge-storage memory products. The new system uses a layer of non-conducting material embedded with discrete (non-overlapping) silicon nanodots, each approximately 3 nanometers across. Each nanodot functions as a single memory bit. To control the memory operation, this layer is then covered with a thin metallic layer, which functions as a "metal gate." The metal gate controls the "on" and "off" states of the transistor. The results are published in the American Institute of Physics' (AIP) journal Applied Physics Letters.

"The metal-gate structure is a mainstream technology on the path toward nanoscale complementary metal-oxide-semiconductor (CMOS) memory technology," said co-author Jia-Min Shieh, researcher, National Nano Device Laboratories, Hsinchu, Taiwan. "Our system uses numerous, discrete silicon nanodots for charge storage and removal. These charges can enter (data write) and leave (data erase) the numerous discrete nanodots in a quick and simple way."

The researchers were able to achieve this new milestone in speed by using ultra-short bursts of green laser light to selectively anneal (activate) specific regions around the metal layer of the metal gate of the memory. Since the sub-millisecond bursts of laser light are so brief and so precise, they are able to accurately create gates over each of the nanodots. This method of memory storage is particularly robust, the researchers explain, because if an individual charge in one of the nano-sites failed, it would barely influence the others. This enables a stable and long-lived data storage platform.

"The materials and the processes used for the devices are also compatible with current main-stream integrated circuit technologies," explains Shieh. "This technology not only meets the current CMOS process line, but can also be applied to other advanced-structure devices."

Article: "Fast Programming Metal-Gate Si Quantum Dot Nonvolatile Memory Using Green Nanosecond Laser Spike Annealing" is published in Applied Physics Letters.

Authors: Yu-Chung Lien (1), Jia-Min Shieh (1,2), Wen-Hsien Huang (1), Cheng-Hui Tu (2), Chieh Wang (2), Chang-Hong Shen (1), Bau-Tong Dai (1), Ci-Ling Pan (3), Chenming Hu (4), and Fu-Liang Yang (1).

(1) National Nano Device Laboratories, Hsinchu, Taiwan
(2) Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Taiwan
(3) Department of Physics, National Tsing Hua University, Hsinchu, Taiwan
(4) Department of Electrical Engineering and Computer Science, University of California, Berkeley

####

For more information, please click here

Contacts:
Charles Blue

301-209-3091

Copyright © American Institute of Physics

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Metal oxide sandwiches: New option to manipulate properties of interfaces February 8th, 2016

Canadian physicists discover new properties of superconductivity February 8th, 2016

Leading bugs to the death chamber: A kinder face of cholesterol February 8th, 2016

From allergens to anodes: Pollen derived battery electrodes February 8th, 2016

Chip Technology

Metal oxide sandwiches: New option to manipulate properties of interfaces February 8th, 2016

The iron stepping stones to better wearable tech without semiconductors February 8th, 2016

Organic crystals allow creating flexible electronic devices: The researchers from the Faculty of Physics of the Moscow State University have grown organic crystals that allow creating flexible electronic devices February 5th, 2016

Scientists guide gold nanoparticles to form 'diamond' superlattices: DNA scaffolds cage and coax nanoparticles into position to form crystalline arrangements that mimic the atomic structure of diamond February 4th, 2016

Memory Technology

A step towards keeping up with Moore's Law: POSTECH researchers develop a novel and efficient fabrication technology for cross-shaped memristor January 30th, 2016

Scientists build a neural network using plastic memristors: A group of Russian and Italian scientists have created a neural network based on polymeric memristors -- devices that can potentially be used to build fundamentally new computers January 28th, 2016

LC.300 Series Nanopositioning Controller from nPoint January 28th, 2016

First all-antiferromagnetic memory device could get digital data storage in a spin January 16th, 2016

Discoveries

Metal oxide sandwiches: New option to manipulate properties of interfaces February 8th, 2016

Canadian physicists discover new properties of superconductivity February 8th, 2016

Leading bugs to the death chamber: A kinder face of cholesterol February 8th, 2016

The iron stepping stones to better wearable tech without semiconductors February 8th, 2016

Announcements

Metal oxide sandwiches: New option to manipulate properties of interfaces February 8th, 2016

Canadian physicists discover new properties of superconductivity February 8th, 2016

Leading bugs to the death chamber: A kinder face of cholesterol February 8th, 2016

From allergens to anodes: Pollen derived battery electrodes February 8th, 2016

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







Car Brands
Buy website traffic