Home > Press > Nanodot-based memory sets new world speed record
Abstract:
A team of researchers from Taiwan and the University of California, Berkeley, has harnessed nanodots to create a new electronic memory technology that can write and erase data 10-100 times faster than today's mainstream charge-storage memory products. The new system uses a layer of non-conducting material embedded with discrete (non-overlapping) silicon nanodots, each approximately 3 nanometers across. Each nanodot functions as a single memory bit. To control the memory operation, this layer is then covered with a thin metallic layer, which functions as a "metal gate." The metal gate controls the "on" and "off" states of the transistor. The results are published in the American Institute of Physics' (AIP) journal Applied Physics Letters.
Nanodot-based memory sets new world speed record
College Park, MD | Posted on April 21st, 2012
A team of researchers from Taiwan and the University of California, Berkeley, has harnessed nanodots to create a new electronic memory technology that can write and erase data 10-100 times faster than today's mainstream charge-storage memory products. The new system uses a layer of non-conducting material embedded with discrete (non-overlapping) silicon nanodots, each approximately 3 nanometers across. Each nanodot functions as a single memory bit. To control the memory operation, this layer is then covered with a thin metallic layer, which functions as a "metal gate." The metal gate controls the "on" and "off" states of the transistor. The results are published in the American Institute of Physics' (AIP) journal Applied Physics Letters.
"The metal-gate structure is a mainstream technology on the path toward nanoscale complementary metal-oxide-semiconductor (CMOS) memory technology," said co-author Jia-Min Shieh, researcher, National Nano Device Laboratories, Hsinchu, Taiwan. "Our system uses numerous, discrete silicon nanodots for charge storage and removal. These charges can enter (data write) and leave (data erase) the numerous discrete nanodots in a quick and simple way."
The researchers were able to achieve this new milestone in speed by using ultra-short bursts of green laser light to selectively anneal (activate) specific regions around the metal layer of the metal gate of the memory. Since the sub-millisecond bursts of laser light are so brief and so precise, they are able to accurately create gates over each of the nanodots. This method of memory storage is particularly robust, the researchers explain, because if an individual charge in one of the nano-sites failed, it would barely influence the others. This enables a stable and long-lived data storage platform.
"The materials and the processes used for the devices are also compatible with current main-stream integrated circuit technologies," explains Shieh. "This technology not only meets the current CMOS process line, but can also be applied to other advanced-structure devices."
Article: "Fast Programming Metal-Gate Si Quantum Dot Nonvolatile Memory Using Green Nanosecond Laser Spike Annealing" is published in Applied Physics Letters.
Authors: Yu-Chung Lien (1), Jia-Min Shieh (1,2), Wen-Hsien Huang (1), Cheng-Hui Tu (2), Chieh Wang (2), Chang-Hong Shen (1), Bau-Tong Dai (1), Ci-Ling Pan (3), Chenming Hu (4), and Fu-Liang Yang (1).
(1) National Nano Device Laboratories, Hsinchu, Taiwan
(2) Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Taiwan
(3) Department of Physics, National Tsing Hua University, Hsinchu, Taiwan
(4) Department of Electrical Engineering and Computer Science, University of California, Berkeley
####
For more information, please click here
Contacts:
Charles Blue
301-209-3091
Copyright © American Institute of Physics
If you have a comment, please
Contact us.
Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.
Bookmark:
News and information
Sound waves precisely position nanowires June 19th, 2013
Scientists Use Nanotechnology to Increase Thermal Stability of Essential Oils June 19th, 2013
Production of Bioactive Material for Quick Treatment of Bone Damages June 19th, 2013
Nanometrics Announces Participation in 5th Annual CEO Investor Summit: Accredited Investor and Publishing Research Analyst Event to be Held Concurrently With SEMICON West and Intersolar 2013 in San Francisco June 19th, 2013
Chip Technology
Sound waves precisely position nanowires June 19th, 2013
Nanometrics Announces Participation in 5th Annual CEO Investor Summit: Accredited Investor and Publishing Research Analyst Event to be Held Concurrently With SEMICON West and Intersolar 2013 in San Francisco June 19th, 2013
Which qubit my dear? New method to distinguish between neighbouring quantum bits June 18th, 2013
SEMATECH to Address Critical Supply Chain Challenges and Present Latest Technology Advances at SEMICON West 2013 June 17th, 2013
Memory Technology
Imec showcases innovation in RRAM R&D at VLSI Technology Symposium June 14th, 2013
Data Highways for Quantum Information June 13th, 2013
Filmmaking magic with polymers June 12th, 2013
Leti Workshop on Innovative Memory Technologies to Include Samsung, Micron, SST-Microchip, Bosch, Altis Semiconductor and STMicroelectronics: June 27 Event to Explore Latest Results in Semiconductor Memory R&D June 5th, 2013
Discoveries
Sound waves precisely position nanowires June 19th, 2013
Scientists Use Nanotechnology to Increase Thermal Stability of Essential Oils June 19th, 2013
Production of Bioactive Material for Quick Treatment of Bone Damages June 19th, 2013
New Method to Synthesize Zinc Oxide Nanoparticles with High Catalytic Activity June 18th, 2013
Announcements
Sound waves precisely position nanowires June 19th, 2013
Scientists Use Nanotechnology to Increase Thermal Stability of Essential Oils June 19th, 2013
Production of Bioactive Material for Quick Treatment of Bone Damages June 19th, 2013
Nanometrics Announces Participation in 5th Annual CEO Investor Summit: Accredited Investor and Publishing Research Analyst Event to be Held Concurrently With SEMICON West and Intersolar 2013 in San Francisco June 19th, 2013