- About Us
- Career Center
- Nano-Social Network
- Nano Consulting
- My Account
Elpida Memory, Inc. (TOKYO: 6665), Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced that its Hiroshima Plant has begun volume production of 40nm process 2-gigabit DDR3 SDRAMs.
Since completing development of the DDR3 SDRAM last October it has taken Elpida only two months to ramp up mass production.
The new 2-gigabit DDR3 SDRAM achieves 44% more chips per wafer compared with Elpida's 50nm DDR3 SDRAM and a 100% yield for DDR3 products that operate at 1.6Gbps, the fastest speed standard for current DDR3. It also supports high-speed products. Compared with 50nm products, it uses about two-thirds less current and supports 1.2V/1.35V operation as well as DDR3 standard 1.5V, resulting in reduced power consumption of around 50%.
Initially, Elpida plans a phased expansion of 40nm 2-gigabit DDR3 SDRAM mass production at its Hiroshima Plant. In the second quarter of 2010, 40nm process production will also begin at Rexchip, a subsidiary in Taiwan, to increase the manufacture of 40nm process products in order to lower products costs. Depending on conditions in the DRAM market, Elpida may transfer 40nm process technology to foundry partners ProMOS and Winbond to expand production based on this technology to an even higher level.
About Elpida Memory
Elpida Memory, Inc. (Tokyo: 6665) is a leading manufacturer of Dynamic Random Access Memory (DRAM) integrated circuits. The company's design, manufacturing and sales operations are backed by world class technological expertise. Its 300mm manufacturing facilities, consisting of its Hiroshima Plant and a Taiwan-based joint venture, Rexchip Electronics, utilize the most advanced manufacturing technologies available. Elpida's portfolio features such characteristics as high-density, high-speed, low power and small packaging profiles. The company provides DRAM solutions across a wide range of applications, including high-end servers, mobile phones and digital consumer electronics.
For more information, please click here
Sumitomo Seimei Yaesu Bldg. 3F, 2-1 Yaesu 2-chome, Chuo-ku, Tokyo
Copyright © Elpida MemoryIf you have a comment, please Contact us.
Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.
|Related News Press|
News and information
Abalonyx launches Reduced Graphene Oxide Product: Abalonyx has successfully scaled up production of thermally reduced graphene oxide (rGO) in its Tofte, Norway, production facility. This product is now offered to customers in Kg-quantities May 10th, 2016
New Generation of Graphene Reinforced Carbon Fibre Prepreg Products March 14th, 2016
New Generation of Graphene Reinforced Carbon Fibre Prepreg Products March 10th, 2016
Research team led by NUS scientists develop plastic flexible magnetic memory device: Novel technique to implant high-performance magnetic memory chip on a flexible plastic surface without compromising performance July 21st, 2016
Meteorite impact on a nano scale August 29th, 2016