Home > Press > SBA Materials contracted Distributorship Agreement with Sumitomo Corporation
Abstract:
Sumitomo Corporation (President and CEO: Susumu Kato, Head office: Chuo-ku, Tokyo, "SC") has contracted with SBA Materials Inc., (President and CEO: William Cook, Head office: Albuquerque, New Mexico, "SBA") to distribute SBA's ultra low-k dielectric materials for advanced semiconductor device manufacture exclusively in Japan, Taiwan and Singapore.
SBA Materials contracted Distributorship Agreement with Sumitomo Corporation
Tokyo & New Mexico | Posted on July 13th, 2009
SBA was established in 2001 dedicated to the development of engineered materials based on its patented self assembly technology. By utilizing self-assembly, a uniform array of nanometer scale pores can be formed with excellent properties that have not been achieved through other techniques.
Advanced semiconductor devices require low-k dielectrics in order to reduce the power required to operate and increase the speed of operation. Currently k=2.7 to 2.4 low-k material is being used in most advanced semiconductor devices. SBA has developed proprietary ultra low-k materials produced by unique and patented method. William Cook adds, "Our materials deliver superior electrical and mechanical properties compared to competing low-k materials." SBA is shipping ultra low-k dielectric products with k=2.0, k=2.2, k=2.3 and k=2.4. Special formulations with k less than 2.0 are available for advanced engineering work.
Sakae Kimura, General Manager of SC states "Sumitomo Corporation will actively expand sales of SBA's ultra low-k materials to semiconductor device manufacturers who produce the most advanced LSI using 32nm technology node and beyond." SC has a local stock of ultra low-k materials in Japan and Taiwan to ensure immediate delivery for customers. SBA and SC target to gain major market share globally for ultra low-k materials.
The market size for ultra low-k materials is growing and forecasted to reach US $1B by 2012 when mass production of advanced LSI devices employing 32/22nm technology node will be ramped up.
SBA and SC expect these new materials, which can improve IC performance while dramatically reducing cost, to play an enabling role as the technology proceeds past the 45nm node to 32nm and beyond.
Additionally, SBA is expanding its product portfolio by utilizing self assembly / nano material engineering technology for other electronic applications such as anti-reflection films for solar cell panels, thin film for LCD panel product, and so on.
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