Home > Press > Cypress Unveils Market’s First SRAM on 65-nm Process Technology
Abstract:
72-Mbit QDR™II+ SRAM Delivers World's Fastest Operating Speed of 550 MHz; Dramatically Expands the Performance of Networking and Signal Processing Applications
Cypress Unveils Market’s First SRAM on 65-nm Process Technology
San Jose, CA | Posted on April 27th, 2009
Cypress Semiconductor Corp. (NYSE:CY), an industry leader in SRAMs, today announced it is sampling the industry's first Quad Data Rate™ (QDR™) and Double Data Rate (DDR) SRAM devices on 65-nm linewidth. The new 72-Mbit QDRII, QDRII+, DDRII and DDRII+ memories leverage process technology developed with foundry partner UMC. The new SRAMs feature the market's fastest available clock speed of 550 MHz and a total data rate of 80 Gbps in a 36-bit I/O width QDRII+ device, using half the power of 90-nm SRAMs. They are ideal for networking applications, including Internet core and edge routers, fixed and modular Ethernet switches, 3G base stations and secure routers, and also enhance the performance of medical imaging and military signal processing systems. The devices are pin compatible with 90-nm SRAMs, enabling networking customers to increase performance and port density while maintaining the same board layout.
Compared with their 90-nm predecessors, the 65-nm QDR and DDR SRAMs lower input and output capacitance by 60 percent. The QDRII+ and DDRII+ devices have On-Die Termination (ODT), which improves signal integrity, reduces system cost and saves board space by eliminating external termination resistors. The 65-nm devices use a Phase Locked Loop (PLL) instead of a Delay Locked Loop (DLL), which enables a 35 percent wider data valid window to reduce development time and cost for the customer.
"We continue to expand our Synchronous SRAM portfolio to broaden our target markets and grow market share," said Dana Nazarian, Executive Vice President of the Memory and Imaging Division at Cypress. "Cypress is committed to supporting the SRAM market long-term and building on our leadership position."
Availability and Photo
The 65-nm QDRII, QDRII+, DDRII and DDRII+ SRAMs are all currently sampling, with production expected in Q3 2009. Each device is available in multiple configurations based on I/O width (x18 or x36), burst length (B4 or B2) and latency (1.5, 2.0 or 2.5). The 65-nm 72-Mbit SRAMs are available in a standard 165-pin Fine-pitch Ball Grid Array (FBGA) package and are pin-compatible with existing 90-nm QDR and DDR devices for easy migration. A high-resolution photo of the QDRII+ SRAM is available at www.cypress.com/go/pr/65nmQDRSRAMphoto.
####
About Cypress Semiconductor Corp.
Cypress delivers high-performance, mixed-signal, programmable solutions that provide customers with rapid time-to-market and exceptional system value. Cypress offerings include the PSoC® programmable system-on-chip, USB controllers, general-purpose programmable clocks and memories. Cypress also offers wired and wireless connectivity technologies ranging from its CyFi™ Low-Power RF solution, to West Bridge® and EZ-USB® FX2LP controllers that enhance connectivity and performance in multimedia handsets. Cypress serves numerous markets including consumer, computation, data communications, automotive, and industrial. Cypress trades on the NYSE under the ticker symbol CY.
Cypress, the Cypress logo, PSoC, West Bridge and EZ-USB are registered trademarks and CyFi is a trademark of Cypress Semiconductor Corp. QDR and Quad Data Rate SRAMs comprise a family of products developed by Cypress, IDT, NEC Electronics, Renesas and Samsung. All other trademarks are the property of their respective owners.
For more information, please click here
Contacts:
Cypress Public Relations
Samer Bahou
408-544-1081
Copyright © Business Wire 2009
If you have a comment, please
Contact us.
Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.
Bookmark:
Imaging
Which qubit my dear? New method to distinguish between neighbouring quantum bits June 18th, 2013
Pioneering breakthrough of chemical nanoengineering to design drugs controlled by light June 18th, 2013
News and information
Pioneering breakthrough of chemical nanoengineering to design drugs controlled by light June 18th, 2013
Study Shows How the Nanog Protein Promotes Growth of Head and Neck Cancer June 18th, 2013
New Method to Synthesize Zinc Oxide Nanoparticles with High Catalytic Activity June 18th, 2013
Chip Technology
Which qubit my dear? New method to distinguish between neighbouring quantum bits June 18th, 2013
SEMATECH to Address Critical Supply Chain Challenges and Present Latest Technology Advances at SEMICON West 2013 June 17th, 2013
Imec shows multiple enhancement options for next-generation FinFETs: Leading nano-electronics R&D center addresses key challenges of Germanium finFET technology at VLSI 2013 June 14th, 2013
Imec showcases innovation in RRAM R&D at VLSI Technology Symposium June 14th, 2013
Announcements
Pioneering breakthrough of chemical nanoengineering to design drugs controlled by light June 18th, 2013
Study Shows How the Nanog Protein Promotes Growth of Head and Neck Cancer June 18th, 2013
New Method to Synthesize Zinc Oxide Nanoparticles with High Catalytic Activity June 18th, 2013
Production of Polyaniline Biosensors Modified with Conductive Polymer Composites June 18th, 2013
Military
Unzipped nanotubes unlock potential for batteries: Rice University lab combines graphene nanoribbons with tin oxide for improved anodes June 13th, 2013
Polymer structures serve as 'nanoreactors' for nanocrystals with uniform sizes, shapes: Tiny chemistry June 11th, 2013
2-D electronics take a step forward: Rice, Oak Ridge labs make semiconducting films for atom-thick circuits June 10th, 2013
Noble way to low-cost fuel cells, halogenated graphene may replace expensive platinum June 6th, 2013