Nanotechnology Now

Our NanoNews Digest Sponsors



Heifer International

Wikipedia Affiliate Button


android tablet pc

Home > Press > "Instant On" Computing: Materials researchers say rebooting soon may be a thing of the past

Researchers report matching the spacing of silicon atoms--the principal component of computer semiconductors--and the spacing of atoms in a material called strontium titanate--a normally non-ferroelectric variant of a material used in "instant memory smart cards." The matched spacing allows the silicon to squeeze the strontium titanate in such a way that it produces ferroelectric properities. Ferroelectric materials provide low-power, high-efficiency electronic memory for devices such as "smart cards" that can instantly reveal and update stored information when waved before a reader. When applied to computer transistors, these materials could allow "instant-on" capability, eliminating the time-consuming booting and rebooting of computer operating systems.

Credit: Jeremy Levy, University of Pittsburgh
Researchers report matching the spacing of silicon atoms--the principal component of computer semiconductors--and the spacing of atoms in a material called strontium titanate--a normally non-ferroelectric variant of a material used in "instant memory smart cards." The matched spacing allows the silicon to squeeze the strontium titanate in such a way that it produces ferroelectric properities. Ferroelectric materials provide low-power, high-efficiency electronic memory for devices such as "smart cards" that can instantly reveal and update stored information when waved before a reader. When applied to computer transistors, these materials could allow "instant-on" capability, eliminating the time-consuming booting and rebooting of computer operating systems.

Credit: Jeremy Levy, University of Pittsburgh

Abstract:
The ferroelectric materials found in today's "smart cards" used in subway, ATM and fuel cards soon may eliminate the time-consuming booting and rebooting of computer operating systems by providing an "instant-on" capability as well as preventing losses from power outages.

"Instant On" Computing: Materials researchers say rebooting soon may be a thing of the past

Arlington, VA | Posted on April 17th, 2009

Researchers supported by a National Science Foundation (NSF) nanoscale interdisciplinary research team award and three Materials Research Science and Engineering Centers at Cornell University, Penn State University and Northwestern University recently added ferroelectric capability to material used in common computer transistors, a feat scientists tried to achieve for more than half a century. They reported their findings in the April 17 journal Science.

Ferroelectric materials provide low-power, high-efficiency electronic memory. Smart cards use the technology to instantly reveal and update stored information when waved before a reader. A computer with this capability could instantly provide information and other data to the user.

Researchers led by Cornell University materials scientist Darrell Schlom took strontium titanate, a normally non-ferroelectric variant of the ferroelectric material used in smart cards, and deposited it on silicon--the principal component of most semiconductors and integrated circuits--in such a way that the silicon squeezed it into a ferroelectric state.

"It's great to see fundamental research on ordered layering of materials, or epitaxial growth, under strained conditions pay off in such a practical manner, particularly as it relates to ultra-thin ferroelectrics" said Lynnette Madsen, the NSF program director responsible for the Nanoscale Interdisciplinary Research Team award.

The result could pave the way for a next-generation of memory devices that are lower power, higher speed and more convenient to use. For everyday computer users, it could mean no more waiting for the operating system to come online or to access memory slowly from the hard drive.

"Several hybrid transistors have been proposed specifically with ferroelectrics in mind," said Schlom. "By creating a ferroelectric directly on silicon, we are bringing this possibility closer to realization."

More research is needed to achieve a ferroelectric transistor that would make "instant on" computing a reality, but having the materials in direct contact, free of intervening reaction layers, is an important step.

The paper's first author, Maitri P. Warusawithana, is a postdoctoral associate in Schlom's lab. The research team also includes scientists at the National Institute of Standards and Technology, Motorola Corp., Ames Laboratory and Intel Corp.

Along with NSF, the Office of Naval Research and the Department of Energy funded the research.

####

About National Science Foundation
The National Science Foundation (NSF) is an independent federal agency that supports fundamental research and education across all fields of science and engineering, with an annual budget of $6.06 billion. NSF funds reach all 50 states through grants to over 1,900 universities and institutions. Each year, NSF receives about 45,000 competitive requests for funding, and makes over 11,500 new funding awards. NSF also awards over $400 million in professional and service contracts yearly.

For more information, please click here

Contacts:
Media Contacts
Bobbie Mixon
NSF
(703) 292-8485


Program Contacts
Lynnette D. Madsen
NSF
(703) 292-4936


Principal Investigators
Darrell Schlom
Cornell University
(607) 255-9617

Copyright © National Science Foundation

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

3rd Iran-Proposed Nano Standard Approved by International Standard Organization November 22nd, 2014

NMTI announces breakthrough solutions for HAMR nanoantenna for next-generation ultra-high density magnetic storage November 21st, 2014

Sustainable Nanotechnologies Project November 20th, 2014

Quantum mechanical calculations reveal the hidden states of enzyme active sites November 20th, 2014

Govt.-Legislation/Regulation/Funding/Policy

3rd Iran-Proposed Nano Standard Approved by International Standard Organization November 22nd, 2014

NMTI announces breakthrough solutions for HAMR nanoantenna for next-generation ultra-high density magnetic storage November 21st, 2014

Sustainable Nanotechnologies Project November 20th, 2014

Quantum mechanical calculations reveal the hidden states of enzyme active sites November 20th, 2014

Chip Technology

Nanometrics Announces Upcoming Investor Events November 19th, 2014

A novel method for identifying the body’s ‘noisiest’ networks November 19th, 2014

Researchers create & control spin waves, lifting prospects for enhanced info processing November 17th, 2014

VDMA Electronics Production Equipment: Growth track for 2014 and 2015 confirmed: Business climate survey shows robust industry sector November 14th, 2014

Discoveries

NMTI announces breakthrough solutions for HAMR nanoantenna for next-generation ultra-high density magnetic storage November 21st, 2014

UO-industry collaboration points to improved nanomaterials: University of Oregon microscope puts spotlight on the surface structure of quantum dots for designing new solar devices November 20th, 2014

Silver Nanoparticles Produced in Iran from Forest Plants Extract November 20th, 2014

Nano Sorbents Able to Remove Pollutions Caused by Oil Derivatives November 20th, 2014

Announcements

3rd Iran-Proposed Nano Standard Approved by International Standard Organization November 22nd, 2014

NMTI announces breakthrough solutions for HAMR nanoantenna for next-generation ultra-high density magnetic storage November 21st, 2014

Silver Nanoparticles Produced in Iran from Forest Plants Extract November 20th, 2014

Nano Sorbents Able to Remove Pollutions Caused by Oil Derivatives November 20th, 2014

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More












ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2014 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE