Nanotechnology Now

Our NanoNews Digest Sponsors



Heifer International

Wikipedia Affiliate Button


android tablet pc

Home > Press > X Marks the Spot: Ions Coldly Go Through NIST Trap Junction

The NIST X-trap is constructed from a sandwich of two diamond-shaped alumina wafers, visible in the right center of the top photo. The bottom photo shows a close-up of the wafers. Ions are created in the lower left portion of the dark grey channel, which is a trench cut through both wafers. By controlling voltages on the 46 electrodes, the ions can be shuttled along the channels and through the junction—between the two gold-coated bridges that form the X—while remaining much cooler than in previous experiments.

Credit: R.B. Blakestad/NIST
The NIST X-trap is constructed from a sandwich of two diamond-shaped alumina wafers, visible in the right center of the top photo. The bottom photo shows a close-up of the wafers. Ions are created in the lower left portion of the dark grey channel, which is a trench cut through both wafers. By controlling voltages on the 46 electrodes, the ions can be shuttled along the channels and through the junction—between the two gold-coated bridges that form the X—while remaining much cooler than in previous experiments. Credit: R.B. Blakestad/NIST

Abstract:
Physicists at the National Institute of Standards and Technology (NIST) have demonstrated a new ion trap that enables ions to go through an intersection while keeping their cool.

X Marks the Spot: Ions Coldly Go Through NIST Trap Junction

Gaithersburg, MD | Posted on April 8th, 2009

Ten million times cooler than in prior similar trips, in fact. The demonstration, described in a forthcoming paper in Physical Review Letters,* is a step toward scaling up trap technology to build a large-scale quantum computer using ions (electrically charged atoms), a potentially powerful machine that could perform certain calculations—such as breaking today's best data encryption codes—much faster than today's computers.

NIST's new trap with a junction solves a key engineering issue for future possible ion-trap quantum computers: how to move ions in a particular quantum mechanical state back and forth between different locations for data storage or logic operations, without heating them up so much that they lose their fragile quantum properties, which are critical to information processing.

The new ion trap, a rectangle roughly 5 by 2 millimeters in outer dimensions, was constructed from laser-machined alumina, with a gold coating to form electrodes. It is more complex than previous NIST ion traps, with 46 electrodes supporting 18 ion trapping zones. Its unique feature is an X-shaped bridge connecting electrodes across a junction between zones. Junctions are required to allow ions to be grouped together efficiently for logic operations. As voltages are applied to different electrodes to move the ions, the electric fields restrain an ion as it moves between trapping zones. The fields created by the X-bridge are required for smooth transport through the junction and to keep ions from popping out at the junction.

NIST scientists transported single beryllium ions through the X-junction more than 1 million times while maintaining the properties critical to information processing with greater than 99.99 percent success. Pairs of ions were transported over 100,000 times. Ion transport through a junction has been reported once before, but the ions in the NIST trap received over 10 million times less heat than the earlier effort. The low heating, achieved through careful control and reductions in electrical noise, minimizes a major source of computation errors and processing slowdowns.

Over the past 15 years, NIST has demonstrated the basic building blocks for a computer based on ion traps, a promising design for a quantum computer. Now, the latest demonstration shows how information might be moved through a quantum processor rapidly and reliably enough for computing. It takes about 20 microseconds to move an ion across the junction and about 50 to 100 microseconds for transport between zones—times compatible with logic operations using ions. The trap design makes large-scale information processing possible while keeping the number of ions in each trap zone relatively small, such that individual ions can be manipulated without unwanted effects.

The work was funded in part by the Intelligence Advanced Research Projects Agency and Office of Naval Research.

* R.B. Blakestad, C. Ospelkaus, A.P. VanDevender, J.M. Amini, J. Britton, D. Leibfried, and D.J. Wineland. High fidelity transport of trapped-ion qubits through an X-junction trap array. Physical Review Letters. Forthcoming.

####

About NIST
From automated teller machines and atomic clocks to mammograms and semiconductors, innumerable products and services rely in some way on technology, measurement, and standards provided by the National Institute of Standards and Technology.

Founded in 1901, NIST is a non-regulatory federal agency within the U.S. Department of Commerce. NIST's mission is to promote U.S. innovation and industrial competitiveness by advancing measurement science, standards, and technology in ways that enhance economic security and improve our quality of life.

Contacts:
Media Contact: Laura Ost, (303) 497-4880

Copyright © NIST

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Scientists reveal breakthrough in optical fiber communications December 21st, 2014

Atom-thick CCD could capture images: Rice University scientists develop two-dimensional, light-sensitive material December 20th, 2014

Oregon researchers glimpse pathway of sunlight to electricity: Collaboration with Lund University uses modified UO spectroscopy equipment to study 'maze' of connections in photoactive quantum dots December 19th, 2014

Instant-start computers possible with new breakthrough December 19th, 2014

Possible Futures

A novel method for identifying the body’s ‘noisiest’ networks November 19th, 2014

Researchers discern the shapes of high-order Brownian motions November 17th, 2014

VDMA Electronics Production Equipment: Growth track for 2014 and 2015 confirmed: Business climate survey shows robust industry sector November 14th, 2014

Open Materials Development Will Be Key for HP's Success in 3D Printing: HP can make a big splash in 3D printing, but it needs to shore up technology claims and avoid the temptation of the razor/razor blade business model in order to flourish November 11th, 2014

Quantum Computing

Nanoscale resistors for quantum devices: The electrical characteristics of new thin-film chromium oxide resistors that can be tuned by controlling the oxygen content detailed in the 'Journal of Applied Physics' December 9th, 2014

Electron pairs on demand: Controlled emission and spatial splitting of electron pairs demonstrated December 4th, 2014

Graphene layer reads optical information from nanodiamonds electronically: Possible read head for quantum computers December 1st, 2014

University of Minnesota engineers make sound loud enough to bend light on a computer chip: Device could improve wireless communications systems November 28th, 2014

Announcements

Scientists reveal breakthrough in optical fiber communications December 21st, 2014

Atom-thick CCD could capture images: Rice University scientists develop two-dimensional, light-sensitive material December 20th, 2014

Oregon researchers glimpse pathway of sunlight to electricity: Collaboration with Lund University uses modified UO spectroscopy equipment to study 'maze' of connections in photoactive quantum dots December 19th, 2014

Instant-start computers possible with new breakthrough December 19th, 2014

Quantum nanoscience

Fraud-proof credit card possible because of quantum physics December 16th, 2014

Nanoscale resistors for quantum devices: The electrical characteristics of new thin-film chromium oxide resistors that can be tuned by controlling the oxygen content detailed in the 'Journal of Applied Physics' December 9th, 2014

High photosensitivity 2D-few-layered molybdenum diselenide phototransistors December 8th, 2014

Electron pairs on demand: Controlled emission and spatial splitting of electron pairs demonstrated December 4th, 2014

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More










ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2014 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE