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Home > News > Interview: Intel research trio discuss 45-nm high-k

November 22nd, 2007

Interview: Intel research trio discuss 45-nm high-k

Abstract:
Intel Corp. started 2007 with a bang with a breakthrough in transistor design, one of the biggest advancements in 40 years. In fact, 45nm high-k then became one of the buzzwords early on as Intel drew first blood in its highly intense battle for processor supremacy.

Now, the company is on its way on ending the year on a high note as it speeds past other chipmakers who are still months away from having production-ready 45nm chips. Intel in November introduced its Penryn 45nm processors using high-k dielectric gate insulator to control leakage current.

Three Intel researchers — Robert Chau, Intel Senior Fellow, technology and manufacturing group director, transistor research and nanotechnology; Kaizad Mistry, 45nm program manager, logic technology development, technology and manufacturing Group; and Tahir Ghani, Fellow TMG, Portland technology development director, transistor technology and integration — who were part of the team behind the 45nm high-k metal gate success, talk about the highs and lows of the project and what motivated them to press on and move on to more challenging endeavors.

Source:
eetimes.com

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