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Home > News > Eliminating Probe Interactions, Other Metrology Issues

October 1st, 2007

Eliminating Probe Interactions, Other Metrology Issues

Michael Garner, manager of the External Materials Research Group, Technology Strategy, at Intel Corp. (Santa Clara, Calif.), gave a presentation at the 2007 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics in which he outlined a few of the hurdles metrology faces in encountering the nanotech era.

An area he has concentrated on is our industry's focus on alternate-state devices that use technologies such as spin for storage and computing purposes. "Currently, we can detect lower concentrations of charge than we can spin," Garner said. "Right now, we can inject spin into a semiconductor, but there aren't many ways of detecting spin concentration in the material. Thus, often times, there's a need for some sort of a device fabricated to actually determine the effective injection of spin-polarized electrons into the semiconductor. We're looking at ways to transport and manipulate spin in very small devices." Garner added that we must be able to detect spin in device structures, as well characterize the concentration of spin-polarized electrons, and map it diagnostically to determine where spins are being lost or transported.


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