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July 16th, 2007
One year after shifting the objective of its lithography program to the 32nm half pitch node, IMEC reports progress on high-index 193nm immersion lithography, double-patterning schemes for 193nm water-based immersion lithography and extreme UV (EUV) lithography.
"Over the last year, we've made significant progress in the three litho approaches we are investigating within our advanced lithography program. Driven by the needs to quickly develop 32nm processes for memory applications and based on the promising results, we are quite confident that double patterning will be taken up as an intermediate solution for 32nm half pitch before a single exposure solution is ready for production," said Luc Van den hove, Executive Vice President and Chief Operating Officer at IMEC.
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