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April 5th, 2005
Nanosys Patent Issued
The U.S. Patent Office approved a patent application by Nanosys Tuesday for nanowire-based field effect transistors (FETs).
Using semiconductor nanowires or carbon nanotubes, the company claims it can fabricate nanoscale FETs with performance up to a thousand times higher than current technologies.
“All the big display makers, all the RFID players, and anyone doing thin-film transistors now has a major force to reckon with,” said Josh Wolfe of Lux Capital.
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