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Home > News > Nanosys Patent Issued

April 5th, 2005

Nanosys Patent Issued

Abstract:
The U.S. Patent Office approved a patent application by Nanosys Tuesday for nanowire-based field effect transistors (FETs).

Using semiconductor nanowires or carbon nanotubes, the company claims it can fabricate nanoscale FETs with performance up to a thousand times higher than current technologies.

“All the big display makers, all the RFID players, and anyone doing thin-film transistors now has a major force to reckon with,” said Josh Wolfe of Lux Capital.

Source:
redherring

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