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Home > News > NVE Notified of Patent Grant on Spintronic Structure

March 29th, 2005

NVE Notified of Patent Grant on Spintronic Structure

Abstract:
NVE Corporation announced that it has been notified by the U. S. Patent and Trademark Office that the patent titled "Magnetic Field Sensor with Augmented Magnetoresistive Sensing Layer" will be issued today. The patent relates to the use of an effect known as "electron spin exchange-biasing" for low-hysteresis spin dependent tunneling (SDT) and giant magnetoresistance (GMR) sensors.

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