Home > News > MRAM unlikely to become universal memory
January 20th, 2005
MRAM unlikely to become universal memory
Abstract:
Magneto-resistive random access memory (MRAM) is one of most advanced technologies that aims to replace Flash and RAM before the end of the decade. The memory may become commercially available as early as late this year, but analysts from NanoMarkets do not believe that the dream of a universal memory technology will become reality.
Source:
tomshardware
Bookmark:
Possible Futures
Lifeboat publishes its first book: The Lifeboat Foundation has published its first book, "The Human Race to the Future: What Could Happen -- and What to Do" May 14th, 2013
UC Santa Barbara History Professor's Book Elucidates, Celebrates ‘Visioneers' May 14th, 2013
Conceptual Nanomedical Lipofuscin Removal Strategy April 29th, 2013
The Global Desalination Market 2013-2023 April 24th, 2013
Memory Technology
RUB physicists let magnetic dipoles interact on the nanoscale for the first time: 'Of great technical interest for future hard disk drives' May 15th, 2013
UC Riverside scientists discovering new uses for tiny carbon nanotubes: Adding ionic liquid to nanotube films could build smaller gadgets, and create more cost effective 'Smart Windows' that darken in bright sun May 15th, 2013
Battery and Memory Device in One April 25th, 2013
NanoRosetta Kickstarter project - Printing and archiving the Human genome for the next 10,000 years using nanotech April 4th, 2013
Announcements
Artificial Forest for Solar Water-Splitting: Berkeley Lab Researchers Report First Fully Integrated Artificial Photosynthesis Nanosystem May 17th, 2013
Moth-Inspired Nanostructures Take the Color Out of Thin Films May 17th, 2013
NIA Public Briefing: Nanotechnology and the Council of Europe May 17th, 2013
Scientists capture first direct proof of Hofstadter butterfly effect May 17th, 2013