Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > News > Resist Road to the 22 nm Technology Node

August 22nd, 2004

Resist Road to the 22 nm Technology Node

Abstract:
There are many stumbling blocks on the road to the 22 nm technology node. The lithography-related specifications of the 2003 International Roadmap for Semiconductors (ITRS)[1] for this node calls for a DRAM half-pitch of 22 nm, printed gate length of 13 nm, resist thickness of 40-80 nm, line-edge (LER) roughness (3-sigma) of 1 nm, and critical dimension (CD) control (3-sigma) of 1 nm.

Source:
future-fab

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Chip Technology

Explaining how 2-D materials break at the atomic level January 20th, 2017

New research helps to meet the challenges of nanotechnology: Research helps to make the most of nanoscale catalytic effects for nanotechnology January 20th, 2017

Ultra-precise chip-scale sensor detects unprecedentedly small changes at the nanoscale January 20th, 2017

Nanometrics to Announce Fourth Quarter and Full Year Financial Results on February 7, 2017 January 19th, 2017

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project