Nanotechnology Now







Heifer International

Wikipedia Affiliate Button


DHgate

Home > News > Resist Road to the 22 nm Technology Node

August 22nd, 2004

Resist Road to the 22 nm Technology Node

Abstract:
There are many stumbling blocks on the road to the 22 nm technology node. The lithography-related specifications of the 2003 International Roadmap for Semiconductors (ITRS)[1] for this node calls for a DRAM half-pitch of 22 nm, printed gate length of 13 nm, resist thickness of 40-80 nm, line-edge (LER) roughness (3-sigma) of 1 nm, and critical dimension (CD) control (3-sigma) of 1 nm.

Source:
future-fab

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Chip Technology

Creating new materials with quantum effects for electronics January 29th, 2015

Advantest to Exhibit at SEMICON Korea in Seoul, South Korea February 4-6 Showcasing Broad Portfolio of Semiconductor Products, Technologies and Solutions January 29th, 2015

Nanometrics to Present at the Stifel 2015 Technology, Internet and Media Conference January 27th, 2015

New pathway to valleytronics January 27th, 2015

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More










ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2015 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE