Nanotechnology Now

Our NanoNews Digest Sponsors





Heifer International

Wikipedia Affiliate Button


android tablet pc

Home > News > Resist Road to the 22 nm Technology Node

August 22nd, 2004

Resist Road to the 22 nm Technology Node

Abstract:
There are many stumbling blocks on the road to the 22 nm technology node. The lithography-related specifications of the 2003 International Roadmap for Semiconductors (ITRS)[1] for this node calls for a DRAM half-pitch of 22 nm, printed gate length of 13 nm, resist thickness of 40-80 nm, line-edge (LER) roughness (3-sigma) of 1 nm, and critical dimension (CD) control (3-sigma) of 1 nm.

Source:
future-fab

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Chip Technology

'Exotic' material is like a switch when super thin April 18th, 2014

Scientists open door to better solar cells, superconductors and hard-drives: Research enhances understanding of materials interfaces April 14th, 2014

Obducat has launched a new generation of SINDRE® Nano Imprint production system April 11th, 2014

Scientists in Singapore develop novel ultra-fast electrical circuits using light-generated tunneling currents April 10th, 2014

NanoNews-Digest
The latest news from around the world, FREE







  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More














ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2014 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE