Nanotechnology Now

• About Us
  
  • Advertising
  • Our Mission
  • Our Team
  • Comments
  • Friends
  • Contact
• Nanotechnology
• News
  
  • Current News
  • Press Releases
  • Submit Press
  • Press kit
  • Interviews
• Columns
• Products
  
  • Our Products
  • Books
  • Featured Books
• Directories
  
  • Companies/Academic
  • Events
  • Glossary
  • Best Of
• Career Center
• Nano-Social Network
• Nano Consulting
• My Account

Home > News > Resist Road to the 22 nm Technology Node

August 22nd, 2004

Resist Road to the 22 nm Technology Node

Abstract:
There are many stumbling blocks on the road to the 22 nm technology node. The lithography-related specifications of the 2003 International Roadmap for Semiconductors (ITRS)[1] for this node calls for a DRAM half-pitch of 22 nm, printed gate length of 13 nm, resist thickness of 40-80 nm, line-edge (LER) roughness (3-sigma) of 1 nm, and critical dimension (CD) control (3-sigma) of 1 nm.

Source:
future-fab

Bookmark:

Related News Press

Chip Technology

Researchers Stitch Defects into the World’s Thinnest Semiconductor May 22nd, 2013

Whirlpools on the Nanoscale Could Multiply Magnetic Memory: At the Advanced Light Source, Berkeley Lab scientists join an international team to control spin orientation in magnetic nanodisks May 22nd, 2013

Imec and GLOBALFOUNDRIES collaborate to advance high-density memory technology: STT-MRAM offers enhanced performance and scalability for embedded and standalone applications May 21st, 2013

Penn engineers' nanoantennas improve infrared sensing May 20th, 2013