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Home > News > Resist Road to the 22 nm Technology Node

August 22nd, 2004

Resist Road to the 22 nm Technology Node

There are many stumbling blocks on the road to the 22 nm technology node. The lithography-related specifications of the 2003 International Roadmap for Semiconductors (ITRS)[1] for this node calls for a DRAM half-pitch of 22 nm, printed gate length of 13 nm, resist thickness of 40-80 nm, line-edge (LER) roughness (3-sigma) of 1 nm, and critical dimension (CD) control (3-sigma) of 1 nm.


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