Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > News > Paper explains ferroelectrics memory losses

August 16th, 2004

Paper explains ferroelectrics memory losses

Abstract:
While the memory inside electronic devices may often be more reliable than that of humans, it, too, can worsen over time. Now a team of scientists from UW-Madison and Argonne National Laboratory may understand why. The results were published in a recent edition of the journal Nature Materials.

Source:
UW-Madison News

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Chip Technology

Columbia engineers create artificial graphene in a nanofabricated semiconductor structure: Researchers are the first to observe the electronic structure of graphene in an engineered semiconductor; finding could lead to progress in advanced optoelectronics and data processing December 13th, 2017

UCLA chemists synthesize narrow ribbons of graphene using only light and heat: Tiny structures could be next-generation solution for smaller electronic devices December 8th, 2017

Device makes power conversion more efficient: New design could dramatically cut energy waste in electric vehicles, data centers, and the power grid December 8th, 2017

Leti Integrates Hybrid III-V Silicon Lasers on 200mm Wafers with Standard CMOS Process December 6th, 2017

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project