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Home > News > Advance in Gallium Nitride Nanowires

July 29th, 2004

Advance in Gallium Nitride Nanowires

Abstract:
A significant breakthrough in the development of the highly prized semiconductor gallium nitride as a building block for nanotechnology has been achieved by a team of scientists with the U.S. Department of Energy's Lawrence Berkeley National Laboratory (Berkeley Lab) and the University of California at Berkeley. For the first time ever, the researchers have been able control the direction in which a gallium nitride nanowire grows. Growth direction is critical to determining the wire's electrical and thermal conductivity and other important properties.

Source:
LBL

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