Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > News > Samsung develops CVD wiring process for 70-nm DRAM

May 28th, 2004

Samsung develops CVD wiring process for 70-nm DRAM

Abstract:
Samsung Electronics Co. Ltd. has developed a chemical vapor deposition (CVD) method for depositing aluminum interconnect in DRAMs using a 70-nm manufacturing process, the company said Thursday (May 27). The company also said it expects to unveil "70-nm class" DRAMs before the end of 2004.

Source:
EETimes

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Memory Technology

Research opens door to smaller, cheaper, more agile communications tech February 16th, 2017

Scientists determine precise 3-D location, identity of all 23,000 atoms in a nanoparticle: Berkeley Lab researchers help to map iron-platinum particle in unprecedented detail February 6th, 2017

Investigations of the skyrmion Hall effect reveal surprising results: One step further towards the application of skyrmions in spintronic devices December 28th, 2016

New material with ferroelectricity and ferromagnetism may lead to better computer memory December 21st, 2016

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project