Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > News > Formation of ultrahigh density Ge nanodots on oxidized Ge/Si

April 28th, 2004

Formation of ultrahigh density Ge nanodots on oxidized Ge/Si

Abstract:
Yoshiaki Nakamura et al. present their work in Journal of Applied Physics. They grew Ge nanodots with a typical size of ~4 nm and ultrahigh density on ultrathin SixGe oxide films made by oxidizing Ge wetting layers grown on Si surfaces. This is a promising result for the application of SiGe-based optoelectronics because of the ultrahigh density of Ge dots in addition to their small dot size.

Source:
PhysOrg

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Discoveries

ICN2 researchers compute unprecedented values for spin lifetime anisotropy in graphene November 17th, 2017

Math gets real in strong, lightweight structures: Rice University researchers use 3-D printers to turn century-old theory into complex schwarzites November 16th, 2017

The stacked color sensor: True colors meet minimization November 16th, 2017

Counterfeits and product piracy can be prevented by security features, such as printed 3-D microstructures: Forgeries and product piracy are detrimental to society and industry -- 3-D microstructures can increase security -- KIT researchers develop innovative fluorescent 3-D stru November 15th, 2017

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project