Home > News > Electronic doping, one atom at a time
March 11th, 2004
Electronic doping, one atom at a time
While the semiconductor industry today routinely dopes bulk silicon with billions of atoms of boron or phosphorous to obtain desired electrical properties, a team of physicists at the University of California, Berkeley, has succeeded in changing the properties of a single molecule by doping it just one atom at a time. "We can precisely change the exact number of dopant atoms attached to a single molecule, either adding or removing them, which is something no one has been able to do before. We've really shown a new level of control of the electronic properties of a molecule," said Michael F. Crommie, UC Berkeley professor of physics.
UCF Nanotech Spinout Developing Revolutionary Battery Technology: Power the Next Generation of Electronics with Carbon July 23rd, 2014
A Crystal Wedding in the Nanocosmos July 23rd, 2014
Nano-sized Chip "Sniffs Out" Explosives Far Better than Trained Dogs: TAU researcher's groundbreaking sensor detects miniscule concentrations of hazardous materials in the air July 23rd, 2014
NIST shows ultrasonically propelled nanorods spin dizzyingly fast July 22nd, 2014