Home > News > Electronic doping, one atom at a time
March 11th, 2004
Electronic doping, one atom at a time
While the semiconductor industry today routinely dopes bulk silicon with billions of atoms of boron or phosphorous to obtain desired electrical properties, a team of physicists at the University of California, Berkeley, has succeeded in changing the properties of a single molecule by doping it just one atom at a time. "We can precisely change the exact number of dopant atoms attached to a single molecule, either adding or removing them, which is something no one has been able to do before. We've really shown a new level of control of the electronic properties of a molecule," said Michael F. Crommie, UC Berkeley professor of physics.
Toward optical chips: A promising light source for optoelectronic chips can be tuned to different frequencies September 19th, 2014
New research points to graphene as a flexible, low-cost touchscreen solution September 19th, 2014
CiQUS researchers design an artificial nose to detect DNA differentiation with single nucleotide resolution September 18th, 2014
Big Results Require Big Ambitions: Three young UCSB faculty receive CAREER awards from the National Science Foundation September 18th, 2014