Home > News > Electronic doping, one atom at a time
March 11th, 2004
Electronic doping, one atom at a time
While the semiconductor industry today routinely dopes bulk silicon with billions of atoms of boron or phosphorous to obtain desired electrical properties, a team of physicists at the University of California, Berkeley, has succeeded in changing the properties of a single molecule by doping it just one atom at a time. "We can precisely change the exact number of dopant atoms attached to a single molecule, either adding or removing them, which is something no one has been able to do before. We've really shown a new level of control of the electronic properties of a molecule," said Michael F. Crommie, UC Berkeley professor of physics.
Quantum compute this -- WSU mathematicians build code to take on toughest of cyber attacks: Revamped knapsack code offers online security for the future March 26th, 2015
Thousands of atoms entangled with a single photon: Result could make atomic clocks more accurate March 26th, 2015
Square ice filling for a graphene sandwich March 26th, 2015
Application of Graphene Oxide in Body Implants in Iran March 26th, 2015