Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > News > Electronic doping, one atom at a time

March 11th, 2004

Electronic doping, one atom at a time

Abstract:
While the semiconductor industry today routinely dopes bulk silicon with billions of atoms of boron or phosphorous to obtain desired electrical properties, a team of physicists at the University of California, Berkeley, has succeeded in changing the properties of a single molecule by doping it just one atom at a time. "We can precisely change the exact number of dopant atoms attached to a single molecule, either adding or removing them, which is something no one has been able to do before. We've really shown a new level of control of the electronic properties of a molecule," said Michael F. Crommie, UC Berkeley professor of physics.

Source:
NN

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Discoveries

A new 'spin' on kagome lattices: Team's findings shed new light on the presence of spin-orbit coupling and topological spin textures in kagome lattices December 9th, 2018

Milestone for bERLinPro: Photocathodes with high quantum efficiency December 8th, 2018

Harnessing the power of 'spin orbit' coupling in silicon: Scaling up quantum computation December 7th, 2018

Iran Develops Water-Repellent Nano-Paint December 5th, 2018

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project