Home > News > Electronic doping, one atom at a time
March 11th, 2004
Electronic doping, one atom at a time
While the semiconductor industry today routinely dopes bulk silicon with billions of atoms of boron or phosphorous to obtain desired electrical properties, a team of physicists at the University of California, Berkeley, has succeeded in changing the properties of a single molecule by doping it just one atom at a time. "We can precisely change the exact number of dopant atoms attached to a single molecule, either adding or removing them, which is something no one has been able to do before. We've really shown a new level of control of the electronic properties of a molecule," said Michael F. Crommie, UC Berkeley professor of physics.
Optical Quality Improvement of Electrical Circuits’ Electrode Zinc Oxide Nanowires December 7th, 2013
Coal yields plenty of graphene quantum dots: Rice U. scientists find simple method for producing dots in bulk from coal, coke December 6th, 2013
The gene sequencing that everyone can afford in future December 6th, 2013
Silvija Gradečak seeks to better the world through new materials December 6th, 2013