Home > News > Electronic doping, one atom at a time
March 11th, 2004
Electronic doping, one atom at a time
While the semiconductor industry today routinely dopes bulk silicon with billions of atoms of boron or phosphorous to obtain desired electrical properties, a team of physicists at the University of California, Berkeley, has succeeded in changing the properties of a single molecule by doping it just one atom at a time. "We can precisely change the exact number of dopant atoms attached to a single molecule, either adding or removing them, which is something no one has been able to do before. We've really shown a new level of control of the electronic properties of a molecule," said Michael F. Crommie, UC Berkeley professor of physics.
Energy-generating cloth could replace batteries in wearable devices March 4th, 2015
Experiment and theory unite at last in debate over microbial nanowires: New model and experiments settle debate over metallic-like conductivity of microbial nanowires in bacterium March 4th, 2015
Magnetic vortices in nanodisks reveal information: Researchers from Dresden and Jülich use microwaves to read out information from smallest storage devices March 4th, 2015
CiQUS researchers obtain high-quality perovskites over large areas by a chemical method March 4th, 2015