Nanotechnology Now

Our NanoNews Digest Sponsors





Heifer International

Wikipedia Affiliate Button


android tablet pc

Home > News > Hybrid tunnel diodes could leapfrog Moore's Law

October 30th, 2003

Hybrid tunnel diodes could leapfrog Moore's Law

Abstract:
Semiconductor researchers have known since the 1950s that the quantum-confinement effects of tunnel diodes boost circuit speed and current handling while reducing component count and power consumption. But processing difficulties long confined tunnel diodes to exotic materials and discrete devices. Now some researchers say a new CMOS-compatible tunnel diode process could extend the lifetime of existing silicon fabs by leapfrogging the next node in the semiconductor road map (as defined by Moore's Law).

Source:
EETimes

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Chip Technology

Electrical engineers take major step toward photonic circuits: Team invents non-metallic metamaterial that enables them to 'compress' and contain light August 19th, 2014

Promising Ferroelectric Materials Suffer From Unexpected Electric Polarizations: Brookhaven Lab scientists find surprising locked charge polarizations that impede performance in next-gen materials that could otherwise revolutionize data-driven devices August 18th, 2014

AI Technology (AIT) Introduces Novel High Temperature Large Area Underfill with Proven Stress Absorption August 15th, 2014

Iranian Scientists Stabilize Protein on Highly Stable Electrode Surface August 14th, 2014

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More














ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2014 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE