Nanotechnology Now

Our NanoNews Digest Sponsors



Heifer International

Wikipedia Affiliate Button


android tablet pc

Home > News > Hybrid tunnel diodes could leapfrog Moore's Law

October 30th, 2003

Hybrid tunnel diodes could leapfrog Moore's Law

Abstract:
Semiconductor researchers have known since the 1950s that the quantum-confinement effects of tunnel diodes boost circuit speed and current handling while reducing component count and power consumption. But processing difficulties long confined tunnel diodes to exotic materials and discrete devices. Now some researchers say a new CMOS-compatible tunnel diode process could extend the lifetime of existing silicon fabs by leapfrogging the next node in the semiconductor road map (as defined by Moore's Law).

Source:
EETimes

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Chip Technology

Instant-start computers possible with new breakthrough December 19th, 2014

Switching to spintronics: Berkeley Lab reports on electric field switching of ferromagnetism at room temp December 17th, 2014

Pb islands in a sea of graphene magnetise the material of the future December 16th, 2014

Stanford team combines logic, memory to build a 'high-rise' chip: Today circuit cards are laid out like single-story towns; Futuristic architecture builds layers of logic and memory into skyscraper chips that would be smaller, faster, cheaper -- and taller December 15th, 2014

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More










ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2014 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE