Nanotechnology Now

Our NanoNews Digest Sponsors


Heifer International

Wikipedia Affiliate Button


DHgate

Home > News > Hybrid tunnel diodes could leapfrog Moore's Law

October 30th, 2003

Hybrid tunnel diodes could leapfrog Moore's Law

Abstract:
Semiconductor researchers have known since the 1950s that the quantum-confinement effects of tunnel diodes boost circuit speed and current handling while reducing component count and power consumption. But processing difficulties long confined tunnel diodes to exotic materials and discrete devices. Now some researchers say a new CMOS-compatible tunnel diode process could extend the lifetime of existing silicon fabs by leapfrogging the next node in the semiconductor road map (as defined by Moore's Law).

Source:
EETimes

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Chip Technology

Gigantic ultrafast spin currents: Scientists from TU Wien (Vienna) are proposing a new method for creating extremely strong spin currents. They are essential for spintronics, a technology that could replace today's electronics May 25th, 2016

Diamonds closer to becoming ideal semiconductors: Researchers find new method for doping single crystals of diamond May 25th, 2016

Dartmouth team creates new method to control quantum systems May 24th, 2016

Attosecond physics: A switch for light-wave electronics May 24th, 2016

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







Car Brands
Buy website traffic