Nanotechnology Now

Our NanoNews Digest Sponsors





Heifer International

Wikipedia Affiliate Button


android tablet pc

Home > News > Samsung advances processes for 4-Gbit flash, 512-Mbit DRAM

September 29th, 2003

Samsung advances processes for 4-Gbit flash, 512-Mbit DRAM

Abstract:
Korean electronics giant Samsung Electronics Co. Ltd. said Monday (Sept. 29) it has developed a 4-Gbit NAND-style flash memory and 512-Mbut DRAM using advanced manufacturing process technologies. The NAND-flash device was fabricated using a 70-nm process technology. The DRAM was made using an 80-nm process, Samsung said. In addition Samsung announced what it called Fusion memory, which includes the monolithic integration of memory with logic.

Source:
EETimes

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Memory Technology

High-temperature plasmonics eyed for solar, computer innovation April 17th, 2014

Scientists open door to better solar cells, superconductors and hard-drives: Research enhances understanding of materials interfaces April 14th, 2014

First principles approach to creating new materials: Solid-state chemistry and theoretical physics combined to help discover new materials with useful properties April 8th, 2014

Domain walls in nanowires cleverly set in motion: Important prerequisite for the development of nano-components for data storage and sensor technology / Publication in Nature Communications April 8th, 2014

NanoNews-Digest
The latest news from around the world, FREE







  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More














ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2014 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE