Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > News > Samsung advances processes for 4-Gbit flash, 512-Mbit DRAM

September 29th, 2003

Samsung advances processes for 4-Gbit flash, 512-Mbit DRAM

Abstract:
Korean electronics giant Samsung Electronics Co. Ltd. said Monday (Sept. 29) it has developed a 4-Gbit NAND-style flash memory and 512-Mbut DRAM using advanced manufacturing process technologies. The NAND-flash device was fabricated using a 70-nm process technology. The DRAM was made using an 80-nm process, Samsung said. In addition Samsung announced what it called Fusion memory, which includes the monolithic integration of memory with logic.

Source:
EETimes

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Memory Technology

Investigations of the skyrmion Hall effect reveal surprising results: One step further towards the application of skyrmions in spintronic devices December 28th, 2016

New material with ferroelectricity and ferromagnetism may lead to better computer memory December 21st, 2016

Characterization of magnetic nanovortices simplified December 21st, 2016

New technology of ultrahigh density optical storage researched at Kazan University: The ever-growing demand for storage devices stimulates scientists to find new ways of improving the performance of existing technologies November 30th, 2016

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project