Nanotechnology Now







Heifer International

Wikipedia Affiliate Button


DHgate

Home > News > Samsung advances processes for 4-Gbit flash, 512-Mbit DRAM

September 29th, 2003

Samsung advances processes for 4-Gbit flash, 512-Mbit DRAM

Abstract:
Korean electronics giant Samsung Electronics Co. Ltd. said Monday (Sept. 29) it has developed a 4-Gbit NAND-style flash memory and 512-Mbut DRAM using advanced manufacturing process technologies. The NAND-flash device was fabricated using a 70-nm process technology. The DRAM was made using an 80-nm process, Samsung said. In addition Samsung announced what it called Fusion memory, which includes the monolithic integration of memory with logic.

Source:
EETimes

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Memory Technology

Nano piano's lullaby could mean storage breakthrough March 16th, 2015

Nanotechnology Helps Increasing Rate of Digital Data Processing, Storage March 9th, 2015

Iranian Scientists Apply Nanotechnology to Produce Electrical Insulator March 7th, 2015

Magnetic vortices in nanodisks reveal information: Researchers from Dresden and Jülich use microwaves to read out information from smallest storage devices March 4th, 2015

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More










ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2015 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE