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Home > News > Samsung advances processes for 4-Gbit flash, 512-Mbit DRAM

September 29th, 2003

Samsung advances processes for 4-Gbit flash, 512-Mbit DRAM

Abstract:
Korean electronics giant Samsung Electronics Co. Ltd. said Monday (Sept. 29) it has developed a 4-Gbit NAND-style flash memory and 512-Mbut DRAM using advanced manufacturing process technologies. The NAND-flash device was fabricated using a 70-nm process technology. The DRAM was made using an 80-nm process, Samsung said. In addition Samsung announced what it called Fusion memory, which includes the monolithic integration of memory with logic.

Source:
EETimes

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