Home > News > Diamond chips sparkle after N-doping breakthrough
September 23rd, 2003
Diamond chips sparkle after N-doping breakthrough
Two recent developments have bought diamond semiconductor devices closer to reality. Diamond has an extremely high thermal conductivity, can withstand high electric fields, and can be made into a semiconductor -- ideal for power devices, one would think. Unfortunately, although it can be p-doped with boron, n-doping is proving to be a problem. By bonding oxygen molecules to the diamond surface, a thin insulating layer can be formed. “Nano FETs have been made in Japan using this,” says Nesladek.
onic Present breakthrough in CMOS-based Transceivers for mm-Wave Radar Systems March 1st, 2015
New nanowire structure absorbs light efficiently: Dual-type nanowire arrays can be used in applications such as LEDs and solar cells February 25th, 2015
SUNY Poly CNSE Researchers and Corporate Partners to Present Forty Papers at Globally Recognized Lithography Conference: SUNY Poly CNSE Research Group Awarded Both ‘Best Research Paper’ and ‘Best Research Poster’ at SPIE Advanced Lithography 2015 forum February 25th, 2015
Ultra-thin nanowires can trap electron 'twisters' that disrupt superconductors February 24th, 2015