Home > News > Diamond chips sparkle after N-doping breakthrough
September 23rd, 2003
Diamond chips sparkle after N-doping breakthrough
Two recent developments have bought diamond semiconductor devices closer to reality. Diamond has an extremely high thermal conductivity, can withstand high electric fields, and can be made into a semiconductor -- ideal for power devices, one would think. Unfortunately, although it can be p-doped with boron, n-doping is proving to be a problem. By bonding oxygen molecules to the diamond surface, a thin insulating layer can be formed. “Nano FETs have been made in Japan using this,” says Nesladek.
Strengthening thin-film bonds with ultrafast data collection October 23rd, 2014
NIST offers electronics industry 2 ways to snoop on self-organizing molecules October 22nd, 2014
Materials for the next generation of electronics and photovoltaics: MacArthur Fellow develops new uses for carbon nanotubes October 21st, 2014
Nitrogen Doped Graphene Characterized by Iranian, Russian, German Scientists October 21st, 2014