Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > News > Diamond chips sparkle after N-doping breakthrough

September 23rd, 2003

Diamond chips sparkle after N-doping breakthrough

Abstract:
Two recent developments have bought diamond semiconductor devices closer to reality. Diamond has an extremely high thermal conductivity, can withstand high electric fields, and can be made into a semiconductor -- ideal for power devices, one would think. Unfortunately, although it can be p-doped with boron, n-doping is proving to be a problem. By bonding oxygen molecules to the diamond surface, a thin insulating layer can be formed. “Nano FETs have been made in Japan using this,” says Nesladek.

Source:
ElectronicsNews

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Chip Technology

Leti to Demo New Curving Technology at Photonics West that Improves Performance of Optical Components January 18th, 2018

Ultra-thin memory storage device paves way for more powerful computing January 17th, 2018

'Gyroscope' molecules form crystal that's both solid and full of motion: New type of molecular machine designed by UCLA researchers could have wide-ranging applications in technology and science January 16th, 2018

New oxide and semiconductor combination builds new device potential: Researchers integrated oxide two-dimensional electron gases with gallium arsenide and paved the way toward new opto-electrical devices January 10th, 2018

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project