Nanotechnology Now

Our NanoNews Digest Sponsors





Heifer International

Wikipedia Affiliate Button


DHgate

Home > News > A revisited concept for parallel e-beam Lithography

May 5th, 2003

A revisited concept for parallel e-beam Lithography

Abstract:
The International Technology Roadmap for Semiconductors (2001 ITRS) and the Technology Roadmap for Nanoelectronics (TRN) favours the Extreme UV (EUV) approach for lithography at 45nm feature size and below. Nevertheless EBDW-techniques (E-Beam direct write) are still considered as potential candidates because sub 10 nm beam sizes are “easily” obtained. PDF.

Source:
IVMC

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Chip Technology

GLOBALFOUNDRIES and Catena Partner to Provide Next-Generation RF Connectivity Solutions for Growing Wireless Markets: Catena Wi-Fi and Bluetooth RF technologies available on GLOBALFOUNDRIES 28nm Super Low Power Process technology September 3rd, 2015

For 2-D boron, it's all about that base: Rice University theorists show flat boron form would depend on metal substrates September 2nd, 2015

Phagraphene, a 'relative' of graphene, discovered September 2nd, 2015

Nanometrics to Participate in the Citi 2015 Global Technology Conference August 26th, 2015

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







Car Brands
Buy website traffic