Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > News > A revisited concept for parallel e-beam Lithography

May 5th, 2003

A revisited concept for parallel e-beam Lithography

Abstract:
The International Technology Roadmap for Semiconductors (2001 ITRS) and the Technology Roadmap for Nanoelectronics (TRN) favours the Extreme UV (EUV) approach for lithography at 45nm feature size and below. Nevertheless EBDW-techniques (E-Beam direct write) are still considered as potential candidates because sub 10 nm beam sizes are “easily” obtained. PDF.

Source:
IVMC

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Chip Technology

Carbon nanotube optics poised to provide pathway to optical-based quantum cryptography and quantum computing: Researchers are exploring enhanced potential of carbon nanotubes for unique applications June 18th, 2018

Making quantum puddles: Physicists discover how to create the thinnest liquid films ever June 13th, 2018

Leti Presenting Strategic Vision and Hosting a Workshop at SEMICON West: “From Electrons to Photons” Leti Workshop and CEO Media Briefing Set for Tuesday, July 10 in W Hotel, San Francisco June 12th, 2018

Nanometrics Updates Time of Webcast at Stifel 2018 Cross Sector Insight Conference June 12th, 2018

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project