Nanotechnology Now







Heifer International

Wikipedia Affiliate Button


DHgate

Home > News > A revisited concept for parallel e-beam Lithography

May 5th, 2003

A revisited concept for parallel e-beam Lithography

Abstract:
The International Technology Roadmap for Semiconductors (2001 ITRS) and the Technology Roadmap for Nanoelectronics (TRN) favours the Extreme UV (EUV) approach for lithography at 45nm feature size and below. Nevertheless EBDW-techniques (E-Beam direct write) are still considered as potential candidates because sub 10 nm beam sizes are “easily” obtained. PDF.

Source:
IVMC

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Chip Technology

Nanotubes with two walls have singular qualities: Rice University lab calculates unique electronic qualities of double-walled carbon nanotubes April 16th, 2015

Graphenea embarks on a new era April 16th, 2015

Quantization of 'surface Dirac states' could lead to exotic applications April 15th, 2015

Study shows novel pattern of electrical charge movement through DNA April 14th, 2015

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More










ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2015 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE