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Home > News > A revisited concept for parallel e-beam Lithography

May 5th, 2003

A revisited concept for parallel e-beam Lithography

Abstract:
The International Technology Roadmap for Semiconductors (2001 ITRS) and the Technology Roadmap for Nanoelectronics (TRN) favours the Extreme UV (EUV) approach for lithography at 45nm feature size and below. Nevertheless EBDW-techniques (E-Beam direct write) are still considered as potential candidates because sub 10 nm beam sizes are “easily” obtained. PDF.

Source:
IVMC

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