Home > News > AMD to discuss 'fastest' transistors at VLSI Symposium
April 3rd, 2003
AMD to discuss 'fastest' transistors at VLSI Symposium
Abstract:
Researchers from Advanced Micro Devices Inc. (AMD) have made a transistor in fully depleted silicon-on-insulator (FD-SOI) manufacturing process technology that operates 30 percent faster than the best previously reported PMOS transistor, the company claimed today (April 2, 2003). The achievement is to be discussed at the VLSI Technology Symposium coming up June 10 through June 12 in Kyoto, Japan, the company added.
Source:
EETimes
Bookmark:
Chip Technology
Researchers Stitch Defects into the World’s Thinnest Semiconductor May 22nd, 2013
Whirlpools on the Nanoscale Could Multiply Magnetic Memory: At the Advanced Light Source, Berkeley Lab scientists join an international team to control spin orientation in magnetic nanodisks May 22nd, 2013
Imec and GLOBALFOUNDRIES collaborate to advance high-density memory technology: STT-MRAM offers enhanced performance and scalability for embedded and standalone applications May 21st, 2013
Penn engineers' nanoantennas improve infrared sensing May 20th, 2013