Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > News > AMD to discuss 'fastest' transistors at VLSI Symposium

April 3rd, 2003

AMD to discuss 'fastest' transistors at VLSI Symposium

Abstract:
Researchers from Advanced Micro Devices Inc. (AMD) have made a transistor in fully depleted silicon-on-insulator (FD-SOI) manufacturing process technology that operates 30 percent faster than the best previously reported PMOS transistor, the company claimed today (April 2, 2003). The achievement is to be discussed at the VLSI Technology Symposium coming up June 10 through June 12 in Kyoto, Japan, the company added.

Source:
EETimes

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

Chip Technology

Further improvement of qubit lifetime for quantum computers: New technique removes quasiparticles from superconducting quantum circuits December 9th, 2016

Chemical trickery corrals 'hyperactive' metal-oxide cluster December 8th, 2016

Leti IEDM 2016 Paper Clarifies Correlation between Endurance, Window Margin and Retention in RRAM for First Time: Paper Presented at IEDM 2016 Offers Ways to Reconcile High-cycling Requirements and Instability at High Temperatures in Resistive RAM December 6th, 2016

Tokyo Institute of Technology research: 3D solutions to energy savings in silicon power transistors December 6th, 2016

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project