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Home > News > AMD to discuss 'fastest' transistors at VLSI Symposium

April 3rd, 2003

AMD to discuss 'fastest' transistors at VLSI Symposium

Abstract:
Researchers from Advanced Micro Devices Inc. (AMD) have made a transistor in fully depleted silicon-on-insulator (FD-SOI) manufacturing process technology that operates 30 percent faster than the best previously reported PMOS transistor, the company claimed today (April 2, 2003). The achievement is to be discussed at the VLSI Technology Symposium coming up June 10 through June 12 in Kyoto, Japan, the company added.

Source:
EETimes

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