Home > News > AMD to discuss 'fastest' transistors at VLSI Symposium
April 3rd, 2003
AMD to discuss 'fastest' transistors at VLSI Symposium
Researchers from Advanced Micro Devices Inc. (AMD) have made a transistor in fully depleted silicon-on-insulator (FD-SOI) manufacturing process technology that operates 30 percent faster than the best previously reported PMOS transistor, the company claimed today (April 2, 2003). The achievement is to be discussed at the VLSI Technology Symposium coming up June 10 through June 12 in Kyoto, Japan, the company added.
Two-dimensional material shows promise for optoelectronics: Team creates LEDs, photovoltaic cells, and light detectors using novel 1-molecule-thick material March 10th, 2014
Squeezing light into metals: University of Utah engineers control conductivity with inkjet printer March 7th, 2014
Optimum Stable Conditions Achieved for Growth of Semiconducting Nanostructures on Metals March 5th, 2014
How 19th Century Physics Could Change the Future of Nanotechnology: University of Cincinnati physics researchers have developed a new way of using an old technique that could help build better nanotechnology March 5th, 2014