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Applied Nanotech Announces Breakthrough With Carbon Nanotube Electron Sources
Austin, Texas. May 13th, 2003
SI Diamond Technology (OTC BB: SIDT) today announced that its subsidiary, Applied Nanotech, Inc. (ANI), has successfully demonstrated an electron emission current density of at least 15 Amps/cm2 using a gated carbon nanotube electron source. These high current density levels were achieved with high currents sufficient to address many applications where high electron current densities are required, such as CRT TVs, high power microwave devices, e-beam lithography and fine-focus x-ray tubes
Many researchers in companies and institutions around the world are working on developing electron sources based on carbon nanotube materials. Some have achieved high current densities from the carbon nanotube materials, but not from gated devices that allow switching the currents at low voltages. Some have achieved high current densities from gated devices but not with useful currents. The performance achieved at ANI now brings the performance of gated carbon nanotube cathodes to levels achieved with standard thermal (hot) cathodes but without the power burden and slow response typical of the thermal cathode.
These high current density electron sources can be created one at a time or in large arrays with independent addressability. The key features are that these sources can achieve both high current and high current densities in a structure that allows low voltage switching of the beam on and off. Low voltage switching is critical to applications such as CRTs because it leads to fast response times and low power operation.
“The new high current and high density electron emitter based on carbon nanotubes will revitalize the current $40 billion CRT industry due to the fact that the carbon nanotube cold electron emitter will shorten the neck (depth) of the CRT and also be more energy efficient (heater free instant emission).” said Dr. Zvi Yaniv, President and CEO of ANI. “With additional electron optics CRT makers will be able to use the new CNT electron emitter to achieve more directional and precise electron beams. Furthermore, due to these properties the electron beams will have very little distortion and will allow a wider deflection angles suitable for large area high definition televisions (HDTV) based on CRTs.” continued Yaniv.
Safe Harbor Statement
This press release contains forward-looking statements that involve risks and uncertainties concerning SI Diamond’s business, products, and financial results. Actual results may differ materially from the results predicted. More information about potential risk factors that could affect our business, products, and financial results is included in SI Diamond’s annual report on Form 10-KSB for the year ended December 31, 2002, and in reports subsequently filed by SI Diamond with the Securities and Exchange Commission (“SEC”). All documents are available through the SEC's Electronic Data Gathering Analysis and Retrieval system (EDGAR) at www.sec.gov or from SI Diamond’s web site at www.sidiamond.com. SI Diamond hereby disclaims any obligation to publicly update the information provided above, including forward-looking statements, to reflect subsequent events or circumstances.
SI Diamond Technology is a holding company consisting of two wholly owned operating subsidiaries. Applied Nanotech Inc. is a premier research and development organization dedicated to developing applications for nanotechnology with an extremely strong position in the field of electron emission applications from carbon film/nanotubes. Electronic Billboard Technology, Inc. (EBT) is geared toward licensing its technology related to electronic digitized sign technology.
Patti D. Hill
BlabberMouth Public Relations
Reprinted with premission.
Copyright SI Diamond Technology.
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