Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > Press > Two-Dimensional Atomically-Flat Transistors Show Promise for Next Generation Green Electronics

Abstract:
UC Santa Barbara researchers demonstrate first n-type field effect transistors on monolayer tungsten diselenide with record performance

Two-Dimensional Atomically-Flat Transistors Show Promise for Next Generation Green Electronics

Santa Barbara, CA | Posted on June 21st, 2013

Researchers at UC Santa Barbara, in collaboration with University of Notre Dame, have recently demonstrated the highest reported drive current on a transistor made of a monolayer of tungsten diselenide (WSe2), a 2-dimensional atomic crystal categorized as a transition metal dichalcogenide (TMD). The discovery is also the first demonstration of an "n-type" WSe2 field-effect-transistor (FET), showing the tremendous potential of this material for future low-power and high-performance integrated circuits.

Monolayer WSe2 is similar to graphene in that it has a hexagonal atomic structure and derives from its layered bulk form in which adjacent layers are held together by relatively weak Van der Waals forces. However, WSe2 has a key advantage over graphene.

"In addition to its atomically smooth surfaces, it has a considerable band gap of 1.6 eV," explained Kaustav Banerjee, professor of electrical and computer engineering and Director of the Nanoelectronics Research Lab at UCSB. Banerjee's research team also includes UCSB researchers Wei Liu, Jiahao Kang, Deblina Sarkar, Yasin Khatami and Professor Debdeep Jena of Notre Dame. Their study was published in the May 2013 issue of Nano Letters.

"There is growing worldwide interest in these 2D crystals due to the many possibilities they hold for the next generation of integrated electronics, optoelectronics and sensors," commented Professor Pulickel Ajayan, the Anderson Professor of Engineering at Rice University and a world renowned authority on nanomaterials. "This result is very impressive and an outcome of the detailed understanding of the physical nature of the contacts to these 2D crystals that the Santa Barbara group has developed."

"Understanding the nature of the metal-TMD interfaces was key to our successful transistor design and demonstration," explained Banerjee. Banerjee's group pioneered a methodology using ab-initio Density Functional Theory (DFT) that established the key criteria needed to evaluate such interfaces leading to the best possible contacts to the monolayer TMDs.

The DFT technique was pioneered by UCSB professor emeritus of physics Dr. Walter Kohn, for which he was awarded the Nobel Prize in Chemistry in 1998. "At a recent meeting with Professor Kohn, we discussed how this relatively new class of semiconductors is benefitting from one of his landmark contributions," said Banerjee.

Wei Liu, a post-doctoral researcher in Banerjee's group and co-author of the study, explained, "Guided by the contact evaluation methodology we have developed, our transistors achieved ON currents as high as 210 uA/um, which are the highest reported value of drive current on any monolayer TMD based FET to date." They were also able to achieve mobility of 142 cm2/V.s, which is the highest reported value for any back-gated monolayer TMD FET.

"DFT simulations provide critical insights to the various factors that effectively determine the quality of the interfaces to these 2D materials, which is necessary for achieving low contact resistances." added Jiahao Kang, a PhD student in Banerjee's group and co-author of the study.

"Nanoelectronics and energy efficient computing technology are key areas of research at UCSB, fields in which our faculty members are renowned for their achievements. With these results, Professor Banerjee's team continues to make important research contributions to next-generation electronics," commented Rod Alferness, Dean of the College of Engineering at UCSB.

Their research was supported by the National Science Foundation, the California NanoSystems Institute at UC Santa Barbara, and the Materials Research Laboratory at UCSB: an NSF MRSEC.

####

About UC Santa Barbara Engineering
The College of Engineering at University of California, Santa Barbara is recognized globally as a leader among the top tier of engineering education and research programs, and is renowned for a successful interdisciplinary approach to engineering research.

For more information, please click here

Copyright © UC Santa Barbara Engineering

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

In IEDM 2016 Keynote, Leti CEO Says ‘Hyperconnectivity’, Human-focused Research and the IOT Promise Profound, Positive Changes December 7th, 2016

Leti IEDM 2016 Paper Clarifies Correlation between Endurance, Window Margin and Retention in RRAM for First Time: Paper Presented at IEDM 2016 Offers Ways to Reconcile High-cycling Requirements and Instability at High Temperatures in Resistive RAM December 6th, 2016

Tokyo Institute of Technology research: 3D solutions to energy savings in silicon power transistors December 6th, 2016

Physicists decipher electronic properties of materials in work that may change transistors December 6th, 2016

Construction of practical quantum computers radically simplified: Scientists invent ground-breaking new method that puts quantum computers within reach December 5th, 2016

Graphene/ Graphite

Physicists decipher electronic properties of materials in work that may change transistors December 6th, 2016

Bumpy surfaces, graphene beat the heat in devices: Rice University theory shows way to enhance heat sinks in future microelectronics November 29th, 2016

Govt.-Legislation/Regulation/Funding/Policy

Physicists decipher electronic properties of materials in work that may change transistors December 6th, 2016

Construction of practical quantum computers radically simplified: Scientists invent ground-breaking new method that puts quantum computers within reach December 5th, 2016

Shape matters when light meets atom: Mapping the interaction of a single atom with a single photon may inform design of quantum devices December 4th, 2016

Research Study: MetaSOLTM Shatters Solar Panel Efficiency Forecasts with Innovative New Coating: Coating Provides 1.2 Percent Absolute Enhancement to Triple Junction Solar Cells December 2nd, 2016

Chip Technology

Leti IEDM 2016 Paper Clarifies Correlation between Endurance, Window Margin and Retention in RRAM for First Time: Paper Presented at IEDM 2016 Offers Ways to Reconcile High-cycling Requirements and Instability at High Temperatures in Resistive RAM December 6th, 2016

Tokyo Institute of Technology research: 3D solutions to energy savings in silicon power transistors December 6th, 2016

Physicists decipher electronic properties of materials in work that may change transistors December 6th, 2016

Construction of practical quantum computers radically simplified: Scientists invent ground-breaking new method that puts quantum computers within reach December 5th, 2016

Nanoelectronics

Leti IEDM 2016 Paper Clarifies Correlation between Endurance, Window Margin and Retention in RRAM for First Time: Paper Presented at IEDM 2016 Offers Ways to Reconcile High-cycling Requirements and Instability at High Temperatures in Resistive RAM December 6th, 2016

Physicists decipher electronic properties of materials in work that may change transistors December 6th, 2016

Journal Nanotechnology Progress International (JONPI) Volume 6, issue 2 coming out soon! December 5th, 2016

Supersonic spray yields new nanomaterial for bendable, wearable electronics: Film of self-fused nanowires clear as glass, conducts like metal November 23rd, 2016

Materials/Metamaterials

Physicists decipher electronic properties of materials in work that may change transistors December 6th, 2016

Infrared instrumentation leader secures exclusive use of Vantablack coating December 5th, 2016

Construction of practical quantum computers radically simplified: Scientists invent ground-breaking new method that puts quantum computers within reach December 5th, 2016

Inside tiny tubes, water turns solid when it should be boiling: MIT researchers discover astonishing behavior of water confined in carbon nanotubes November 30th, 2016

Announcements

In IEDM 2016 Keynote, Leti CEO Says ‘Hyperconnectivity’, Human-focused Research and the IOT Promise Profound, Positive Changes December 7th, 2016

Leti IEDM 2016 Paper Clarifies Correlation between Endurance, Window Margin and Retention in RRAM for First Time: Paper Presented at IEDM 2016 Offers Ways to Reconcile High-cycling Requirements and Instability at High Temperatures in Resistive RAM December 6th, 2016

Tokyo Institute of Technology research: 3D solutions to energy savings in silicon power transistors December 6th, 2016

Physicists decipher electronic properties of materials in work that may change transistors December 6th, 2016

Research partnerships

Deep insights from surface reactions: Researchers use Stampede supercomputer to study new chemical sensing methods, desalination and bacterial energy production December 2nd, 2016

Quantum obstacle course changes material from superconductor to insulator December 1st, 2016

Novel silicon etching technique crafts 3-D gradient refractive index micro-optics November 28th, 2016

Single photon converter -- a key component of quantum internet November 28th, 2016

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project