Nanotechnology Now







Heifer International

Wikipedia Affiliate Button


DHgate

Home > Press > Two-Dimensional Atomically-Flat Transistors Show Promise for Next Generation Green Electronics

Abstract:
UC Santa Barbara researchers demonstrate first n-type field effect transistors on monolayer tungsten diselenide with record performance

Two-Dimensional Atomically-Flat Transistors Show Promise for Next Generation Green Electronics

Santa Barbara, CA | Posted on June 21st, 2013

Researchers at UC Santa Barbara, in collaboration with University of Notre Dame, have recently demonstrated the highest reported drive current on a transistor made of a monolayer of tungsten diselenide (WSe2), a 2-dimensional atomic crystal categorized as a transition metal dichalcogenide (TMD). The discovery is also the first demonstration of an "n-type" WSe2 field-effect-transistor (FET), showing the tremendous potential of this material for future low-power and high-performance integrated circuits.

Monolayer WSe2 is similar to graphene in that it has a hexagonal atomic structure and derives from its layered bulk form in which adjacent layers are held together by relatively weak Van der Waals forces. However, WSe2 has a key advantage over graphene.

"In addition to its atomically smooth surfaces, it has a considerable band gap of 1.6 eV," explained Kaustav Banerjee, professor of electrical and computer engineering and Director of the Nanoelectronics Research Lab at UCSB. Banerjee's research team also includes UCSB researchers Wei Liu, Jiahao Kang, Deblina Sarkar, Yasin Khatami and Professor Debdeep Jena of Notre Dame. Their study was published in the May 2013 issue of Nano Letters.

"There is growing worldwide interest in these 2D crystals due to the many possibilities they hold for the next generation of integrated electronics, optoelectronics and sensors," commented Professor Pulickel Ajayan, the Anderson Professor of Engineering at Rice University and a world renowned authority on nanomaterials. "This result is very impressive and an outcome of the detailed understanding of the physical nature of the contacts to these 2D crystals that the Santa Barbara group has developed."

"Understanding the nature of the metal-TMD interfaces was key to our successful transistor design and demonstration," explained Banerjee. Banerjee's group pioneered a methodology using ab-initio Density Functional Theory (DFT) that established the key criteria needed to evaluate such interfaces leading to the best possible contacts to the monolayer TMDs.

The DFT technique was pioneered by UCSB professor emeritus of physics Dr. Walter Kohn, for which he was awarded the Nobel Prize in Chemistry in 1998. "At a recent meeting with Professor Kohn, we discussed how this relatively new class of semiconductors is benefitting from one of his landmark contributions," said Banerjee.

Wei Liu, a post-doctoral researcher in Banerjee's group and co-author of the study, explained, "Guided by the contact evaluation methodology we have developed, our transistors achieved ON currents as high as 210 uA/um, which are the highest reported value of drive current on any monolayer TMD based FET to date." They were also able to achieve mobility of 142 cm2/V.s, which is the highest reported value for any back-gated monolayer TMD FET.

"DFT simulations provide critical insights to the various factors that effectively determine the quality of the interfaces to these 2D materials, which is necessary for achieving low contact resistances." added Jiahao Kang, a PhD student in Banerjee's group and co-author of the study.

"Nanoelectronics and energy efficient computing technology are key areas of research at UCSB, fields in which our faculty members are renowned for their achievements. With these results, Professor Banerjee's team continues to make important research contributions to next-generation electronics," commented Rod Alferness, Dean of the College of Engineering at UCSB.

Their research was supported by the National Science Foundation, the California NanoSystems Institute at UC Santa Barbara, and the Materials Research Laboratory at UCSB: an NSF MRSEC.

####

About UC Santa Barbara Engineering
The College of Engineering at University of California, Santa Barbara is recognized globally as a leader among the top tier of engineering education and research programs, and is renowned for a successful interdisciplinary approach to engineering research.

For more information, please click here

Copyright © UC Santa Barbara Engineering

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

When mediated by superconductivity, light pushes matter million times more April 28th, 2015

Chemists strike nano-gold: 4 new atomic structures for gold nanoparticle clusters: Research builds upon work by Nobel Prize-winning team from Stanford University April 28th, 2015

More is less in novel electronic material: Adding electrons actually shrinks the system April 27th, 2015

Two-dimensional semiconductor comes clean April 27th, 2015

Scientists join forces to reveal the mass and shape of single molecules April 27th, 2015

Graphene

Two-dimensional semiconductor comes clean April 27th, 2015

The 16th Trends in Nanotechnology International Conference (TNT 2015) unveils 25 Keynote Speakers: Call for abstracts open April 27th, 2015

Govt.-Legislation/Regulation/Funding/Policy

Chemists strike nano-gold: 4 new atomic structures for gold nanoparticle clusters: Research builds upon work by Nobel Prize-winning team from Stanford University April 28th, 2015

International research team discovers new mechanism behind malaria progression: Findings provide a new avenue for research in malaria treatment April 27th, 2015

More is less in novel electronic material: Adding electrons actually shrinks the system April 27th, 2015

Two-dimensional semiconductor comes clean April 27th, 2015

Chip Technology

Two-dimensional semiconductor comes clean April 27th, 2015

Surface matters: Huge reduction of heat conduction observed in flat silicon channels April 23rd, 2015

Drexel materials scientists putting a new spin on computing memory April 22nd, 2015

Printing Silicon on Paper, with Lasers April 21st, 2015

Nanoelectronics

Surface matters: Huge reduction of heat conduction observed in flat silicon channels April 23rd, 2015

New class of 3D-printed aerogels improve energy storage April 22nd, 2015

‘Oxford Instruments Young Nanoscientist India Award 2015’ to Prof. Arindam Ghosh April 20th, 2015

Advances in molecular electronics: Lights on -- molecule on: Researchers from Dresden and Konstanz succeed in light-controlled molecule switching April 20th, 2015

Materials/Metamaterials

More is less in novel electronic material: Adding electrons actually shrinks the system April 27th, 2015

The 16th Trends in Nanotechnology International Conference (TNT 2015) unveils 25 Keynote Speakers: Call for abstracts open April 27th, 2015

Graphenea celebrates fifth anniversary April 27th, 2015

Surface matters: Huge reduction of heat conduction observed in flat silicon channels April 23rd, 2015

Announcements

When mediated by superconductivity, light pushes matter million times more April 28th, 2015

Chemists strike nano-gold: 4 new atomic structures for gold nanoparticle clusters: Research builds upon work by Nobel Prize-winning team from Stanford University April 28th, 2015

Graphenea celebrates fifth anniversary April 27th, 2015

Sensor Designed in Iran Able to Remove Formaldehyde Gas from Environment April 27th, 2015

Research partnerships

When mediated by superconductivity, light pushes matter million times more April 28th, 2015

Chemists strike nano-gold: 4 new atomic structures for gold nanoparticle clusters: Research builds upon work by Nobel Prize-winning team from Stanford University April 28th, 2015

International research team discovers new mechanism behind malaria progression: Findings provide a new avenue for research in malaria treatment April 27th, 2015

More is less in novel electronic material: Adding electrons actually shrinks the system April 27th, 2015

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More










ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project