Nanotechnology Now

Our NanoNews Digest Sponsors



Heifer International

Wikipedia Affiliate Button


android tablet pc

Home > Press > Fabrication on Patterned Silicon Carbide Produces Bandgap for Graphene-Based Electronics

Graphene bandgap
Graphene bandgap

Abstract:
By fabricating graphene structures atop nanometer-scale "steps" etched into silicon carbide, researchers have for the first time created a substantial electronic bandgap in the material suitable for room-temperature electronics. Use of nanoscale topography to control the properties of graphene could facilitate fabrication of transistors and other devices, potentially opening the door for developing all-carbon integrated circuits.

Fabrication on Patterned Silicon Carbide Produces Bandgap for Graphene-Based Electronics

Atlanta, GA | Posted on November 19th, 2012

Researchers have measured a bandgap of approximately 0.5 electron-volts in 1.4-nanometer bent sections of graphene nanoribbons. The development could provide new direction to the field of graphene electronics, which has struggled with the challenge of creating bandgap necessary for operation of electronic devices.

"This is a new way of thinking about how to make high-speed graphene electronics," said Edward Conrad, a professor in the School of Physics at the Georgia Institute of Technology. "We can now look seriously at making fast transistors from graphene. And because our process is scalable, if we can make one transistor, we can potentially make millions of them."

The findings were reported November 18 in the journal Nature Physics. The research, done at the Georgia Institute of Technology in Atlanta and at SOLEIL, the French national synchrotron facility, has been supported by the National Science Foundation Materials Research Science and Engineering Center (MRSEC) at Georgia Tech, the W.M. Keck Foundation and the Partner University Fund from the Embassy of France.

Researchers don't yet understand why graphene nanoribbons become semiconducting as they bend to enter tiny steps - about 20 nanometers deep - that are cut into the silicon carbide wafers. But the researchers believe that strain induced as the carbon lattice bends, along with the confinement of electrons, may be factors creating the bandgap. The nanoribbons are composed of two layers of graphene.

Production of the semiconducting graphene structures begins with the use of e-beams to cut "trenches" into silicon carbide wafers, which are normally polished to create a flat surface for the growth of epitaxial graphene. Using a high-temperature furnace, tens of thousands of graphene ribbons are then grown across the steps, using photolithography.

During the growth, the sharp edges of trenches become smoother as the material attempts to regain its flat surface. The growth time must therefore be carefully controlled to prevent the narrow silicon carbide features from melting too much.

The graphene fabrication also must be controlled along a specific direction so that the carbon atom lattice grows into the steps along the material's "armchair" direction. "It's like trying to bend a length of chain-link fence," Conrad explained. "It only wants to bend one way."

The new technique permits not only the creation of a bandgap in the material, but potentially also the fabrication of entire integrated circuits from graphene without the need for interfaces that introduce resistance. On either side of the semiconducting section of the graphene, the nanoribbons retain their metallic properties.

"We can make thousands of these trenches, and we can make them anywhere we want on the wafer," said Conrad. "This is more than just semiconducting graphene. The material at the bends is semiconducting, and it's attached to graphene continuously on both sides. It's basically a Shottky barrier junction."

By growing the graphene down one edge of the trench and then up the other side, the researchers could in theory produce two connected Shottky barriers - a fundamental component of semiconductor devices. Conrad and his colleagues are now working to fabricate transistors based on their discovery.

Confirmation of the bandgap came from angle-resolved photoemission spectroscopy measurements made at the Synchrotron CNRS in France. There, the researchers fired powerful photon beams into arrays of the graphene nanoribbons and measured the electrons emitted.

"You can measure the energy of the electrons that come out, and you can measure the direction from which they come out," said Conrad. "From that information, you can work backward to get information about the electronic structure of the nanoribbons."

Theorists had predicted that bending graphene would create a bandgap in the material. But the bandgap measured by the research team was larger than what had been predicted.

Beyond building transistors and other devices, in future work the researchers will attempt to learn more about what creates the bandgap - and how to control it. The property may be controlled by the angle of the bend in the graphene nanoribbon, which can be controlled by altering the depth of the step.

"If you try to lay a carpet over a small imperfection in the floor, the carpet will go over it and you may not even know the imperfection is there," Conrad explained. "But if you go over a step, you can tell. There are probably a range of heights in which we can affect the bend."

He predicts that the discovery will create new activity as other graphene researchers attempt to utilize the results.

"If you can demonstrate a fast device, a lot of people will be interested in this," Conrad said. "If this works on a large scale, it could launch a niche market for high-speed, high-powered electronic devices."

In addition to Conrad, the research team included J. Hicks, M.S. Nevius, F. Wang, K. Shepperd, J. Palmer, J. Kunc, W.A. De Heer and C. Berger, all from Georgia Tech; A. Tejeda from the Institut Jean Lamour, CNES - Univ. de Nancy and the Synchrotron SOLEIL; A. Taleb-Ibrahimi from the CNRS/Synchrotron SOLEIL, and F. Bertran and P. Le Fevre from Synchrotron SOLEIL.

This research was supported by the National Science Foundation Materials Research Science and Engineering Center (MRSEC) at Georgia Tech under Grants DMR-0820382 and DMR-1005880, the W.M. Keck Foundation, and the Partner University Fund from the Embassy of France. The content of the article is the responsibility of the authors and does not necessarily represent the views of the National Science Foundation.

Writer: John Toon

####

For more information, please click here

Contacts:
Research News & Publications Office
Georgia Institute of Technology
177 North Avenue
Atlanta, Georgia 30332-0181

Media Relations Contact:
John Toon
404-894-6986

Copyright © Georgia Institute of Technology Research News

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related Links

CITATION: Hicks, J., A wide-bandgap metal-semiconductor-metal nanostructure made entirely from graphene, Nature Physics (2012). dx.doi.org/10.1038/NPHYS2487:

Related News Press

News and information

Toward optical chips: A promising light source for optoelectronic chips can be tuned to different frequencies September 19th, 2014

New research points to graphene as a flexible, low-cost touchscreen solution September 19th, 2014

Wear-resistant ceramic powder maximises component lifespan in high-stress applications: Innovnano’s nanostructured 3YSZ offers improved tribological performance for manufacturing components September 18th, 2014

IEEE International Electron Devices Meeting To Celebrate 60th Anniversary as The Leading Technical Conference for Advanced Semiconductor Devices September 18th, 2014

Graphene

New research points to graphene as a flexible, low-cost touchscreen solution September 19th, 2014

Chip Technology

Toward optical chips: A promising light source for optoelectronic chips can be tuned to different frequencies September 19th, 2014

IEEE International Electron Devices Meeting To Celebrate 60th Anniversary as The Leading Technical Conference for Advanced Semiconductor Devices September 18th, 2014

‘Small’ transformation yields big changes September 16th, 2014

Researchers Create World’s Largest DNA Origami September 11th, 2014

Discoveries

Toward optical chips: A promising light source for optoelectronic chips can be tuned to different frequencies September 19th, 2014

New research points to graphene as a flexible, low-cost touchscreen solution September 19th, 2014

CiQUS researchers design an artificial nose to detect DNA differentiation with single nucleotide resolution September 18th, 2014

Big Results Require Big Ambitions: Three young UCSB faculty receive CAREER awards from the National Science Foundation September 18th, 2014

Announcements

Toward optical chips: A promising light source for optoelectronic chips can be tuned to different frequencies September 19th, 2014

New research points to graphene as a flexible, low-cost touchscreen solution September 19th, 2014

FEI Opens New Technology Center in Czech Republic: FEI expands its presence in Brno with the opening of a new, larger facility September 18th, 2014

Biosensors Get a Boost from Graphene Partnership: $5 Million Investment Supports Dozens of Jobs and Development of 300mm Fabrication Process and Wafer Transfer Facility September 18th, 2014

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More














ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2014 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE