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October 1st, 2012
Graphene Replaces Traditional Silicon Substrates in Future Devices
Abstract:
Researchers at the Norwegian University of Science and Technology (NTNU) have patented and are commercializing a method by which gallium arsenide (GaAs) nanowires are grown on graphene.
The method, which was described and published in the journal Nano Letters ("Vertically Aligned GaAs Nanowires on Graphite and Few-Layer Graphene: Generic Model and Epitaxial Growth"), employs Molecular Beam Epitaxy (MBE) to grow the GaAs nanowires layer by layer.
Source:
spectrum.ieee.org
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