- About Us
- Career Center
- Nano-Social Network
- Nano Consulting
- My Account
|Complementary TFT: (a) Output characteristics of typical solution-processed oxide and evaporated pentacene transistors, (b) inverter characteristics of the hybrid technology at different power voltages. The inset shows a photograph of an inverter. (c) Cross section of the hybrid technology.|
Imec and Holst Centre report the fabrication of high-performance solution-processed n-type metal-oxide thin-film transistors (TFTs) after post-annealing at temperatures as low as 250°C. Using these oxide n-TFTs in combination with pentacene p-TFTs, a completely scalable integration process is developed for hybrid inorganic-organic complementary logic on foil. A bidirectional RFID circuit, recently presented at ISSCC, proves the ability of the technology to realize complex, fast and low-voltage circuitry.
The development of a thin-film equivalent for Si CMOS circuitry is one of the key objectives of thin-film electronics. Combining n-channel transistors and p-channel transistors in a CMOS architecture allows low static power dissipation, simplified and more robust circuit design and low noise. A very promising approach to realize complementary thin-film logic is to integrate oxide n-TFTs with organic p-TFTs. The preferred technique to make n-type metal-oxide TFTs is solution-based processing, allowing a simple and high-throughput fabrication process. However, solution processing of metal oxides is typically done at high temperatures (350-500°C), making the technique incompatible with flexible substrates such as polyimide.
Imec and Holst Centre have now demonstrated high-performance solution-based n-type metal oxide TFTs processed directly on polyimide foil and annealed at 250°C. The n-type indium-based oxide transistors were photolithographically fabricated in a bottom Au gate - top Ti S/D contact geometry with channel lengths down to 2-10μm and 100nm of high-k Al2O3 acting as the gate dielectric. The oxide active layer is deposited by spin-coating and subsequently baked in air at a temperature as low as 250°C. Excellent transistor performances have been achieved on polyimide foil with saturation mobilities exceeding 2cm²/Vs, leakage currents below 1pA and Ion/Ioff ratios up to 108. This solution-based unipolar oxide TFT technology is well suited for application in e.g. active-matrix organic light-emitting diode (AMOLED) backplanes.
In a next step, a hybrid organic-inorganic complementary technology has been developed that combines the high-performance n-TFT with a thermally evaporated pentacene p-TFT. The latter has a mobility of up to 1cm2/Vs. A gold layer acts as the gate for both the organic p- and inorganic n-TFT, high-k Al2O3 is used to form the dielectric layer. First, the complementary TFT technology was implemented on a rigid substrate. Using this technology, hybrid complementary circuit building blocks, such as inverters and ring oscillators were realized. Supply voltages as low as 2V resulted in good circuit behavior, indicating that the presented technology is suited for future low-voltage applications. This complementary TFT technology enabled to make the world's first RFID circuit (using TFTs) that allows reader-talks-first communication, as recently presented at ISSCC 2012.
For more information, please click here
Maestro Marketing & PR
Copyright © IMECIf you have a comment, please Contact us.
Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.
|Related News Press|
News and information
Atomically thin sensor detects harmful air pollution in the home April 18th, 2016
Cooling graphene-based film close to pilot-scale production April 30th, 2016
Exploring phosphorene, a promising new material April 29th, 2016
Researchers create a first frequency comb of time-bin entangled qubits: Discovery is a significant step toward multi-channel quantum communication and higher capacity quantum computers April 28th, 2016
Electrically Conductive Graphene Ink Enables Printing of Biosensors April 23rd, 2016
Leti Extends Collaboration with Qualcomm on CoolCubeTM 3D Integration Technology for High-Density, High-Performance ICs: Collaboration Goals Include Building an Ecosystem To Take the Chip-stacking Technology from Design to Fabrication April 13th, 2016
Conformal transfer of graphene for reproducible device fabrication August 11th, 2015
GLOBALFOUNDRIES Launches Industry’s First 22nm FD-SOI Technology Platform: 22FDX offers the best combination of performance, power consumption and cost for IoT, mainstream mobile, RF connectivity, and networking July 13th, 2015