Nanotechnology Now







Heifer International

Wikipedia Affiliate Button


DHgate

Home > Press > New '3-D' transistors promising future chips, lighter laptops

Abstract:
First Experimental Demonstration of Gate-all-around III-V MOSFETs
by Top-down Approach

J. J. Gu,1 Y. Q. Liu,2 Y. Q. Wu,1 R. Colby,1 R. G. Gordon,2 and P. D. Ye1

1) School of Electrical and Computer Engineering, Purdue University

2) Department of Chemistry and Chemical Biology, Harvard University

The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN gate stacks by a top-down approach. A well-controlled InGaAs nanowire release process and a novel ALD high-k/metal gate process has been developed to enable the fabrication of III-V GAA MOSFETs. Well-behaved on-state and off-state performance has been achieved with channel length (Lch) down to 50nm. A detailed scaling metrics study (S.S., DIBL, VT) with Lch of 50nm - 110nm and fin width of 30nm - 50nm are carried out, showing the immunity to short channel effects with the advanced 3-D structure. The GAA structure has provided a viable path towards ultimate scaling of III-V MOSFETs.

New '3-D' transistors promising future chips, lighter laptops

West Lafayette, IN | Posted on December 6th, 2011

Researchers from Purdue and Harvard universities have created a new type of transistor made from a material that could replace silicon and have a 3-D structure instead of conventional flat computer chips.

The approach could enable engineers to build faster, more compact and efficient integrated circuits and lighter laptops that generate less heat than today's. The transistors contain tiny nanowires made not of silicon, like conventional transistors, but from a material called indium-gallium-arsenide.

The device was created using a so-called "top-down" method, which is akin to industrial processes to precisely etch and position components in transistors. Because the approach is compatible with conventional manufacturing processes, it is promising for adoption by industry, said Peide "Peter" Ye, a professor of electrical and computer engineering at Purdue.

A new generation of silicon computer chips, due to debut in 2012, will contain transistors having a vertical structure instead of a conventional flat design. However, because silicon has a limited "electron mobility" - how fast electrons flow - other materials will likely be needed soon to continue advancing transistors with this 3-D approach, Ye said.

Indium-gallium-arsenide is among several promising semiconductors being studied to replace silicon. Such semiconductors are called III-V materials because they combine elements from the third and fifth groups of the periodic table.

"Industry and academia are racing to develop transistors from the III-V materials," Ye said. "Here, we have made the world's first 3-D gate-all-around transistor on much higher-mobility material than silicon, the indium-gallium-arsenide."

Findings will be detailed in a paper to be presented during the International Electron Devices Meeting on Dec. 5-7 in Washington, D.C. The work is led by Purdue doctoral student Jiangjiang Gu; Harvard doctoral student Yiqun Liu; Roy Gordon, Harvard's Thomas D. Cabot Professor of Chemistry; and Ye.

Transistors contain critical components called gates, which enable the devices to switch on and off and to direct the flow of electrical current. In today's chips, the length of these gates is about 45 nanometers, or billionths of a meter. However, in 2012 industry will introduce silicon-based 3-D transistors having a gate length of 22 nanometers.

"Next year if you buy a computer it will have the 22-nanometer gate length and 3-D silicon transistors," Ye said.

The 3-D design is critical because the 22-nanometer gate lengths will not work in a flat design.

"Once you shrink gate lengths down to 22 nanometers on silicon you have to do more complicated structure design," Ye said. "The ideal gate is a necklike, gate-all-around structure so that the gate surrounds the transistor on all sides."

The nanowires are coated with a "dielectric," which acts as a gate. Engineers are working to develop transistors that use even smaller gate lengths, 14 nanometers, by 2015.

However, further size reductions beyond 14 nanometers and additional performance improvements are likely not possible using silicon, meaning new designs and materials will be needed to continue progress, Ye said.

"Nanowires made of III-V alloys will get us to the 10 nanometer range," he said.

The new findings confirmed that the device made using a III-V material has the potential to conduct electrons five times faster than silicon.

Creating smaller transistors also will require finding a new type of insulating layer essential for the devices to switch off. As gate lengths shrink smaller than 14 nanometers, the silicon dioxide insulator used in conventional transistors fails to perform properly and is said to "leak" electrical charge.

One potential solution to this leaking problem is to replace silicon dioxide with materials that have a higher insulating value, or "dielectric constant," such as hafnium dioxide or aluminum oxide.

In the new work, the researchers applied a dielectric coating made of aluminum oxide using a method called atomic layer deposition. Because atomic layer deposition is commonly used in industry, the new design may represent a practical solution to the coming limits of conventional silicon transistors.

Using atomic layer deposition might enable engineers to design transistors having thinner oxide and metal layers for the gates, possibly consuming far less electricity than silicon devices.

"A thinner dielectric layer means speed goes up and voltage requirements go down," Ye said.

The work is funded by the National Science Foundation and the Semiconductor Research Corp. and is based at the Birck Nanotechnology Center in Purdue's Discovery Park. The latest research is similar to, but fundamentally different from, research reported by Ye's group in 2009. That work involved a design called a finFET, for fin field-effect transistor, which uses a finlike structure instead of the conventional flat design. The new design uses nanowires instead of the fin design.

####

For more information, please click here

Contacts:
Writer:
Emil Venere
765-494-4709


Source:
Peide Ye
765-494-7611


Copyright © Purdue University

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

UT Dallas engineers twist nanofibers to create structures tougher than bulletproof vests March 27th, 2015

Novel nanoparticle therapy promotes wound healing March 27th, 2015

Designer's toolkit for dynamic DNA nanomachines: Arm-waving nanorobot signals new flexibility in DNA origami March 27th, 2015

Using magnetic fields to understand high-temperature superconductivity: Los Alamos explores experimental path to potential 'next theory of superconductivity' March 27th, 2015

Govt.-Legislation/Regulation/Funding/Policy

UT Dallas engineers twist nanofibers to create structures tougher than bulletproof vests March 27th, 2015

Novel nanoparticle therapy promotes wound healing March 27th, 2015

Designer's toolkit for dynamic DNA nanomachines: Arm-waving nanorobot signals new flexibility in DNA origami March 27th, 2015

Using magnetic fields to understand high-temperature superconductivity: Los Alamos explores experimental path to potential 'next theory of superconductivity' March 27th, 2015

Possible Futures

Nanotechnology in Medical Devices Market is expected to reach $8.5 Billion by 2019 March 25th, 2015

Nanotechnology Enabled Drug Delivery to Influence Future Diagnosis and Treatments of Diseases March 21st, 2015

Nanocomposites Market Growth, Industry Outlook To 2020 by Grand View Research, Inc. March 21st, 2015

Nanotechnology Drug Delivery Market in the US 2012-2016 : Latest Report Available by Radiant Insights, Inc March 16th, 2015

Chip Technology

State-of-the-art online system unveiled to pinpoint metrology software accuracy March 27th, 2015

SUNY POLY CNSE to Host First Ever Northeast Semi Supply Conference (NESCO) Conference Will Connect New and Emerging Innovators in the Northeastern US and Canada with Industry Leaders and Strategic Investors to Discuss Future Growth Opportunities in NYS March 25th, 2015

NXP and GLOBALFOUNDRIES Announce Production of 40nm Embedded Non-Volatile Memory Technology: Co-developed technology to leverage GLOBALFOUNDRIES 40nm process technology platform March 24th, 2015

Building shape inspires new material discovery March 24th, 2015

Nanoelectronics

SUNY POLY CNSE to Host First Ever Northeast Semi Supply Conference (NESCO) Conference Will Connect New and Emerging Innovators in the Northeastern US and Canada with Industry Leaders and Strategic Investors to Discuss Future Growth Opportunities in NYS March 25th, 2015

UW scientists build a nanolaser using a single atomic sheet March 24th, 2015

Iranian Researchers Present Model to Determine Dynamic Behavior of Nanostructures March 24th, 2015

Sharper nanoscopy: What happens when a quantum dot looks in a mirror? March 19th, 2015

Discoveries

Chemists make new silicon-based nanomaterials March 27th, 2015

UT Dallas engineers twist nanofibers to create structures tougher than bulletproof vests March 27th, 2015

Novel nanoparticle therapy promotes wound healing March 27th, 2015

Designer's toolkit for dynamic DNA nanomachines: Arm-waving nanorobot signals new flexibility in DNA origami March 27th, 2015

Announcements

UT Dallas engineers twist nanofibers to create structures tougher than bulletproof vests March 27th, 2015

Novel nanoparticle therapy promotes wound healing March 27th, 2015

Designer's toolkit for dynamic DNA nanomachines: Arm-waving nanorobot signals new flexibility in DNA origami March 27th, 2015

Using magnetic fields to understand high-temperature superconductivity: Los Alamos explores experimental path to potential 'next theory of superconductivity' March 27th, 2015

Research partnerships

SUNY Poly & M+W Make Major Announcement: Major Expansion To Include M+W Owned Gehrlicher Solar America Corporation That Will Create up to 400 Jobs to Develop Solar Power Plants at SUNY Poly Sites Across New York State March 26th, 2015

ORNL-led team demonstrates desalination with nanoporous graphene membrane March 25th, 2015

New kind of 'tandem' solar cell developed: Researchers combine 2 types of photovoltaic material to make a cell that harnesses more sunlight March 24th, 2015

UW scientists build a nanolaser using a single atomic sheet March 24th, 2015

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More










ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2015 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE