Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > Press > SOI Industry Consortium publishes technical paper on porting semiconductor designs from bulk silicon to FD-SOI consortium: Ability to Leverage Existing IC Designs Can Speed Time-to-Market for FD-SOI Devices at the 20nm Node

Abstract:
A group of leading semiconductor companies have developed a roadmap for leveraging CMOS designs intended for manufacturing on bulk silicon to fabricate ICs on fully depleted silicon-on-insulator (FD-SOI) substrates with ultra-thin buried oxide layers, producing chips with improved performance and lower operating power. The companies involved in this collaborative research effort - including SOI Industry Consortium members ARM, Leti, Université Catholique de Louvain (UCL), IBM, GlobalFoundries and Soitec - have published their findings in a new white paper titled "Considerations for Bulk CMOS to FD-SOI Design Porting."

SOI Industry Consortium publishes technical paper on porting semiconductor designs from bulk silicon to FD-SOI consortium: Ability to Leverage Existing IC Designs Can Speed Time-to-Market for FD-SOI Devices at the 20nm Node

Boston, MA | Posted on November 12th, 2011

"This work shows that porting circuits from bulk silicon to FD-SOI can be very direct, depending on the FD-SOI technology used by a specific chipmaker," said Horacio Mendez, executive director of the SOI Industry Consortium. "Design porting can enable shorter time-to-market for FD-SOI-based devices. Porting existing bulk CMOS designs to FD-SOI will lead to further optimization of ICs at the 20nm node and even faster implementation of FD-SOI devices."

The research, which examined both bulk-to-FD-SOI IP porting and full-chip design porting, determined that using existing planar designs with minimal adjustments is especially viable for standard cell libraries, memory compilers and most I/Os, with slightly more efforts for some types of analog and mixed-signal designs.

In terms of circuit performance, the key benefits of using FD-SOI over planar bulk CMOS include:

- Faster operation at equivalent leakage current, with FD-SOI's advantage becoming even larger at lower supply voltages (Vdd)

- Power savings of up to 40 percent, enabled by FD-SOI's ability to reach the same operating frequencies as bulk CMOS at significantly lower supply voltage

- Greatly reduced variability, with a positive impact on the minimum supply voltage of SRAM arrays, chip-level leakage, etc.

- The ability to operate complete IP cores or full chips at very low supply voltages down to 0.5-0.6 volt

- Excellent responsiveness to back-bias, a powerful option available in FD-SOI devices to boost performance, cut leakage power and reduce corner variations

- Enhanced efficiency of other low-power design techniques such as DVFS (Dynamic Voltage and Frequency Scaling) etc.

The new white paper's section on "Impact Per Design Domain" examines two paths for full-chip design porting. The most straightforward and fastest porting from bulk silicon to FD-SOI aims at not changing the place-and-route and modifying as little as possible the graphic database system (GDS) contents. The second approach optimizes the system-on-chip (SOC) design to take full advantage of FD-SOI enhancements such as back-biasing.

Appendices and reference sections in the white paper provide details on the various technology issues involved and links to FD-SOI technical papers presented at top industry conferences in recent years.

In addition to accommodating bulk-silicon designs, FD-SOI technology enables simplified processing of semiconductor devices, using fewer steps than fabricating ICs on bulk silicon. This streamlining means that, at upcoming technology nodes, it will cost less to manufacture semiconductors on FD-SOI wafers than on bulk silicon, as quantified in a recent study by IC Knowledge.

####

About SOI Industry Consortium
The SOI Industry Consortium is chartered with accelerating silicon-on-insulator (SOI) innovation into broad markets by promoting the benefits of SOI technology and reducing the barriers to adoption. Representing innovation leaders from the entire electronics industry infrastructure, current SOI Industry Consortium members include AMD, Applied Materials, ARM, Cadence Design Systems, CEA-Léti, Freescale Semiconductor, GLOBALFOUNDRIES, IBM, IMEC, Infotech, Innovative Silicon, Kanazawa Institute of Technology , KLA-Tencor, MEMC, Mentor Graphics, MIT Lincoln Laboratories, Nvidia, Ritsumeikan University, Samsung, Semico, SEH Europe, Soitec, Stanford University, STMicroelectronics, Synopsys, Tyndall Institute, University of California-Berkeley, University Catholique de Louvain, UMC and Varian. Membership is open to all companies and institutions throughout the electronics industry.

Legal Note:

The views and opinions expressed by the SOI Industry Consortium through officers in the SOI Industry Consortium or in this presentation or other communication vehicles are not necessarily representative of the views and opinions of individual members. Officers of the SOI Industry Consortium speaking on behalf of the Consortium should not be considered to be speaking for the member company or companies they are associated with, but rather as representing the views of the SOI Industry Consortium. Views and opinions are also subject to change without notice, and the SOI Industry Consortium assumes no obligation to update the information in this communication or accompanying discussions.

For more information, please click here

Contacts:
Camille Darnaud-Dufour
+33 (0) 6 79 49 51 43

Copyright © SOI Industry Consortium

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Ag/ZnO-Nanorods Schottky diodes based UV-PDs are fabricated and tested May 26th, 2017

New metamaterial-enhanced MRI technique tested on humans May 26th, 2017

Controlling 3-D behavior of biological cells using laser holographic techniques May 26th, 2017

Unveiling the quantum necklace: Researchers simulate quantum necklace-like structures in superfluids May 26th, 2017

Chip Technology

Researchers find new way to control light with electric fields May 25th, 2017

Nanometrics Announces Retirement Plans of CEO Timothy Stultz: Dr. Stultz to Continue as Director May 25th, 2017

GLOBALFOUNDRIES and Chengdu Partner to Expand FD-SOI Ecosystem in China: More than $100M investment to establish a center of excellence for FDXTM FD-SOI design May 23rd, 2017

Plasmon-powered upconversion nanocrystals for enhanced bioimaging and polarized emission: Plasmonic gold nanorods brighten lanthanide-doped upconversion superdots for improved multiphoton bioimaging contrast and enable polarization-selective nonlinear emissions for novel nanoscal May 19th, 2017

Announcements

Ag/ZnO-Nanorods Schottky diodes based UV-PDs are fabricated and tested May 26th, 2017

New metamaterial-enhanced MRI technique tested on humans May 26th, 2017

Controlling 3-D behavior of biological cells using laser holographic techniques May 26th, 2017

Unveiling the quantum necklace: Researchers simulate quantum necklace-like structures in superfluids May 26th, 2017

Interviews/Book Reviews/Essays/Reports/Podcasts/Journals/White papers

Ag/ZnO-Nanorods Schottky diodes based UV-PDs are fabricated and tested May 26th, 2017

New metamaterial-enhanced MRI technique tested on humans May 26th, 2017

Controlling 3-D behavior of biological cells using laser holographic techniques May 26th, 2017

Unveiling the quantum necklace: Researchers simulate quantum necklace-like structures in superfluids May 26th, 2017

Alliances/Trade associations/Partnerships/Distributorships

California Research Alliance by BASF establishes more than 25 research projects in three years April 26th, 2017

BASF and Landa partner to create revolutionary pigments for automotive coatings: The alliance combines BASF innovations with Landa nano-pigment technology April 5th, 2017

Leti Announces EU/South Korean Project for World’s First 5G-system Prototype: Coinciding with the 2018 Winter Games in PyeongChang, Korea, Prototype Will Be First Time State-of-the-art Terrestrial Wireless Communication Is Seamlessly Combined with Disruptive Satellite Communicati April 4th, 2017

ATTOPSEMI Technology Joins FDXcelerator Program to Deliver Advanced Non-Volatile Memory IP to GLOBALFOUNDRIES 22 FDX® Technology Platform: Leading-edge I-fuse™ brings higher reliability, smaller cell size and ease of programmability for consumer, automotive, and IoT applications March 27th, 2017

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project