- About Us
- Nano-Social Network
- Nano Consulting
- My Account
Robert S. Chau, Intel Senior Fellow, Technology and Manufacturing Group Director, Transistor Research and Nanotechnology, Intel Corporation will act as Key Note Speaker at the CS Europe Conference, March 2012, Frankfurt.
Defining the next steps for the Compound Semiconductor Industry
Following the success of CS Europe 2011, next year's conference is expanding to 2 days and offers a fantastic mix/quality of speakers making it the must attend industry event for 2012.
Please register at www.cseurope.net and remember to book your delegate place now as numbers will be limited.
The conference will take place on 12th and 13th March 2012 at the Hilton Hotel, Frankfurt, Germany.
It will feature a mix of insightful market research presentations and cutting-edge research destined to shape tomorrow's compound semiconductor industry.
12th March 2012 am : "CS Europe 2012: Markets and III-V CMOS Conference"
Talks will include:
Compound Semiconductor Markets: Current Status and Future Prospects - Asif Anwar, Director - Strategic Technologies Practice, Strategy Analytics
The Market for LEDs in Lighting - Mr. Philip Smallwood, Lighting Market Analyst, IMS Research
Wide Bandgap device market update - Dr. Philippe Roussel, Senior Project Manager, Yole Développement
European efforts to develop III-Vs on 200 and 300 mm silicon - Dr. Matty Caymax, Chief Scientist, imec
The Integration of silicon CMOS with III-Vs - Professor Iain Thayne, University of Glasgow
Progress of Sematech to develop III-Vs on 200 mm silicon - Richard Hill, Sematech
III-V 3D Transistors - Peide Ye, Professor of Electrical and Computer Engineering, Purdue University
12th March 2012 pm & 13th March - full day : "CS Europe 2012: LEDs, lasers, PV and electronics Conference"
This day and a half will concentrate on presentations involving industry mainly from the chipmaker sector.
Integration of silicon CMOS with III-Vs - Robert S. Chau, Intel Senior Fellow
SiC and GaN Electronics - Dr. John Palmour, Cree co-founder and chief technology officer, Power & RF
Ammono's ammonothermal method to make GaN substrates - Dr. Robert Dwiliński, President, CEO, Ammonno S.A.
Tomorrow's RF chips for mobile devices - Todd Gillenwater, VP of Technology and Advanced Development,
Building a Successful III-V Pure Play Foundry - Dr. John Atherton, WIN Semiconductors
Scalable "on-silicon" solutions (GaN-on-Si and Ge-on-Si) using rare oxide buffer layers - Dr. Michael Lebby, General Manager & Chief Technology Officer, Translucent Inc.
III-Nitride Lasers Based on Nonpolar/Semipolar Substrates - James W. Raring, VP of Laser Engineering, Soraa Inc.
Markets and Applications for SiC Transistors - Dieter Liesabeths, Vice President Sales & Marketing, SemiSouth Laboratories, Inc.
Perspective of an LED Manufacturer - Iain Black, Philips Lumileds Lighting Company
JDSU's role in the CPV Market following its acquisition of Quantasol technology - Jan-Gustav Werthen, JDSU
Commercialisation of GaN on SI based Power Devices at International Rectifier - Dr. Michael A. Briere, International Rectifier
Nitrides for base stations - Professor Rik Jos, NXP
Approach to MOCVD vacuum & Abatement - Mike Czerniak, EdwardsVacuum Ltd
Advances in Wide Bandgap Semiconductors for Power Electronics - Dr. Markus Behet, Dow Corning
Large diameter GaN-on-Si epiwafers for power electronics - EpiGaN
Tomorrow's RF chips for mobile devices - TriQuint
There will also be presentations by
For more information, please click here
Chief Operating Officer
CS Europe Conference
Tel: +44 (0)2476 718970
Copyright © CS Europe ConferenceIf you have a comment, please Contact us.
Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.
|Related News Press|
News and information
NUS researchers achieve major breakthrough in flexible electronics: New classes of printable electrically conducting polymer materials make better electrodes for plastic electronics and advanced semiconductor devices January 14th, 2017
Fast track control accelerates switching of quantum bits December 16th, 2016
GLOBALFOUNDRIES Demonstrates Industry-Leading 56Gbps Long-Reach SerDes on Advanced 14nm FinFET Process Technology: Proven ASIC IP solution will enable significant performance and power efficiency improvements for next-generation high-speed applications December 13th, 2016
Nanometrics to Present at the 19th Annual Needham Growth Conference December 22nd, 2016