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Home > Press > Iran Manufactures Deep Reactive Ion Etching Device

Abstract:
The researchers at Tose-e-Hesgar-Sazan-Asia Company managed to design and construct 'Deep Reactive Ion Etching Device' which is able to act as an environmentally-sustainable system by using H2 and O2 instead of a sort of polymer utilized in its foreign rivals.

Iran Manufactures Deep Reactive Ion Etching Device

Tehran, Iran | Posted on November 5th, 2011

Dr. Shamsoddin Mohajerzadeh, faculty member at Computer and Electrical Engineering Faculty, University of Tehran, stated that significant advances have been made in metals and ceramics machining mostly done by enhanced computer systems called CNC and CEO of the aforementioned company.

"Despite of many improvements achieved in this area, producing micro or nano structures are still beyond imagination and requires specific devices which are extremely expensive and lie within the sphere of high-tech. For this purpose, plasma cutting at very high precision is needed which could be materialized in combination with lithographic techniques," he added.

"Our device is a strictly precise deep vertical plasma etching machine by which it is possible to achieve structures of high aspect ratio through intelligent application of different gases like H2, O2, and SF6 which have high erosive capacity."

"Its similar counterpart which is owned by a German company is so complicated and is eight times more expensive than the domestic device in terms of used gases and other relevant costs," Mohajerzadeh noted.

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