Nanotechnology Now

Our NanoNews Digest Sponsors





Heifer International

Wikipedia Affiliate Button


DHgate

Home > Press > Imec demonstrates extremely high-speed heterojunction bipolar transistors: The devices open new avenues in wireless communications and imaging

Cross-section of bipolar HBT device in a B-E-B-C configuration after end-of-line processing
Cross-section of bipolar HBT device in a B-E-B-C configuration after end-of-line processing

Abstract:
Imec realized a fT/fMAX 245GHz/450GHz SiGe:C heterojunction bipolar transistor (HBT) device, a key enabler for future high-volume millimeter-wave low-power circuits to be used in automotive radar applications. These HBT devices also pave the way to silicon-based millimeter wave circuits penetrating the so-called THz gap, enabling enhanced imaging systems for security, medical and scientific applications

Imec demonstrates extremely high-speed heterojunction bipolar transistors: The devices open new avenues in wireless communications and imaging

Leuven, Belgium | Posted on October 10th, 2011

The extremely high-speed devices have a fully self-aligned architecture by self-alignment of the emitter, base and collector region, and implement an optimized collector doping profile. Compared to III-V HBT devices, SiGe:C HBTs combine high-density and low-cost integration, making them suitable for consumer applications. Such high-speed devices can open up new application areas, working at very high frequencies with lower power dissipation, or applications which require a reduced impact of process, voltage and temperature variations at lower frequencies for better circuit reliability.

To achieve the ultra high-speed requirements, state-of-the-art SiGe:C HBTs need further up-scaling of the device performance. Thin sub-collector doping profiles are generally believed to be mandatory for this up-scaling. Usually, the collector dopants are introduced in the beginning of the processing and thus exposed to the complete thermal budget of the process flow. This complicates the accurate positioning of the buried collector. By in-situ arsenic doping during the simultaneous growth of the sub-collector pedestal and the SiGe:C base, imec introduced both a thin, well controlled, lowly doped collector region close to the base and a sharp transition to the highly doped collector without further complicating the process. This resulted in a considerable increase of the overall HBT device performance: Peak fMAX values above 450GHz are obtained on devices with a high early voltage, a BVCEO of 1.7V and a sharp transition from the saturation to the active region in the IC-VCE output curve. Despite the aggressive scaling of the sub-collector doping profile, the collector-base capacitance values did not increase much. Moreover, the current gain is well defined, with an average around 400 and the emitter-base tunnel current, visible at low VBE values, is limited as well.

These outstanding results were realized within the framework of the European joint research project DOTFIVE which aims at developing SiGe:C HBT devices that operate at 500 GHz at room temperature.

####

About IMEC
Imec performs world-leading research in nanoelectronics. Imec leverages its scientific knowledge with the innovative power of its global partnerships in ICT, healthcare and energy. Imec delivers industry-relevant technology solutions. In a unique high-tech environment, its international top talent is committed to providing the building blocks for a better life in a sustainable society. Imec is headquartered in Leuven, Belgium, and has offices in Belgium, the Netherlands, Taiwan, US, China, India and Japan. Its staff of about 1,900 people includes more than 500 industrial residents and guest researchers. In 2010, imec's revenue (P&L) was 285 million euro. Further information on imec can be found at www.imec.be.
Imec is a registered trademark for the activities of IMEC International (a legal entity set up under Belgian law as a "stichting van openbaar nut”), imec Belgium (IMEC vzw supported by the Flemish Government), imec the Netherlands (Stichting IMEC Nederland, part of Holst Centre which is supported by the Dutch Government), imec Taiwan (IMEC Taiwan Co.) and imec China (IMEC Microelectronics (Shangai) Co. Ltd.) and imec India (Imec India Private Limited).

For more information, please click here

Contacts:
Hanne Degans
External Communications Officer
T: +32 16 28 17 69
M: +32 486 065 175


Barbara Kalkis
Maestro Marketing & PR
T : +1 408 996 9975

Copyright © IMEC

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

National Science Foundation Selects SUNY Poly CNSE for Expanded $2.1M Northeast Advanced Technological Education Center: NSF Center Locates to NanoCollege in Support of Flourishing Tech Industry in NYS September 1st, 2015

RUSNANOPRIZE Directorate Announces New Deadline for Nominations Submission – September 11, 2015 September 1st, 2015

$200K Awarded to Develop In Vitro Lung Test for Toxicity of Inhaled Nanomaterials: In Vitro Lung Test Designed to Protect Human Health and Replace Animal Testing September 1st, 2015

Hot electrons point the way to perfect light absorption: Physicists study how to achieve perfect absorption of light with the help of rough ultrathin films September 1st, 2015

Imaging

Nanolab Technologies LEAPS Forward with High-Performance Analysis Services to the World: Nanolab Orders Advanced Local Electrode Atom Probe (LEAP®) Microscope from CAMECA Unit of AMETEK Materials Analysis Division August 27th, 2015

50 Years of Scanning Electron Microscopy from ZEISS: ZEISS celebrates the birth of the first commercial scanning electron microscope in 1965 August 26th, 2015

Announcing Oxford Instruments and School of Physics signing a Memorandum of Understanding August 26th, 2015

Kwansei Gakuin University in Hyogo, Japan, uses Raman microscopy to study crystallographic defects in silicon carbide wafers August 25th, 2015

Chip Technology

Nanometrics to Participate in the Citi 2015 Global Technology Conference August 26th, 2015

Kwansei Gakuin University in Hyogo, Japan, uses Raman microscopy to study crystallographic defects in silicon carbide wafers August 25th, 2015

A little light interaction leaves quantum physicists beaming August 25th, 2015

'Magic' sphere for information transfer: Professor at the Lomonosov Moscow State University made the «magic» sphere for information transfer August 24th, 2015

Nanoelectronics

Nanotechnology that will impact the Security & Defense sectors to be discussed at NanoSD2015 conference August 25th, 2015

'Quantum dot' technology may help light the future August 19th, 2015

Surprising discoveries about 2-D molybdenum disulfide: Berkeley Lab researchers use award-winning campanile probe on promising semiconductor August 15th, 2015

Better together: Graphene-nanotube hybrid switches August 3rd, 2015

Announcements

$200K Awarded to Develop In Vitro Lung Test for Toxicity of Inhaled Nanomaterials: In Vitro Lung Test Designed to Protect Human Health and Replace Animal Testing September 1st, 2015

Hot electrons point the way to perfect light absorption: Physicists study how to achieve perfect absorption of light with the help of rough ultrathin films September 1st, 2015

Using DNA origami to build nanodevices of the future September 1st, 2015

Nanotech could rid cattle of ticks, with less collateral damage September 1st, 2015

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







Car Brands
Buy website traffic