Nanotechnology Now







Heifer International

Wikipedia Affiliate Button


DHgate

Home > Press > New 'FeTRAM' is promising computer memory technology

This diagram shows the layout for a new type of computer memory that could be faster than the existing commercial memory and use far less power than flash memory devices. The technology, called FeTRAM, combines silicon nanowires with a "ferroelectric" polymer, a material that switches polarity when electric fields are applied, making possible a new type of ferroelectric transistor. (Birck Nanotechnology Center, Purdue University)
This diagram shows the layout for a new type of computer memory that could be faster than the existing commercial memory and use far less power than flash memory devices. The technology, called FeTRAM, combines silicon nanowires with a "ferroelectric" polymer, a material that switches polarity when electric fields are applied, making possible a new type of ferroelectric transistor.

(Birck Nanotechnology Center, Purdue University)

Abstract:
FETRAM. An Organic Ferroelectric Material Based Novel Random Access Memory Cell Saptarshi Das*†‡ and Joerg Appenzeller†‡

†Department of Electrical and Computer Engineering

and ‡Birck Nanotechnology Center, Purdue University

School of Electrical and Computer Engineering, Purdue University

Science and technology in the electronics area have always been driven by the development of materials with unique properties and their integration into novel device concepts with the ultimate goal to enable new functionalities in innovative circuit architectures. In particular, a shift in paradigm requires a synergistic approach that combines materials, devices and circuit aspects simultaneously. Here we report the experimental implementation of a novel nonvolatile memory cell that combines silicon nanowires with an organic ferroelectric polymer—PVDF-TrFE—into a new ferroelectric transistor architecture. Our new cell, the ferroelectric transistor random access memory (FeTRAM) exhibits similarities with state-of the-art ferroelectric random access memories (FeRAMs) in that it utilizes a ferroelectric material to store information in a nonvolatile (NV) fashion but with the added advantage of allowing for nondestructive readout. This nondestructive readout is a result of information being stored in our cell using a ferroelectric transistor instead of a capacitor—the scheme commonly employed in conventional FeRAMs.

New 'FeTRAM' is promising computer memory technology

West Lafayette, IN | Posted on September 26th, 2011

Researchers are developing a new type of computer memory that could be faster than the existing commercial memory and use far less power than flash memory devices.

The technology combines silicon nanowires with a "ferroelectric" polymer, a material that switches polarity when electric fields are applied, making possible a new type of ferroelectric transistor.

"It's in a very nascent stage," said doctoral student Saptarshi Das, who is working with Joerg Appenzeller, a professor of electrical and computer engineering and scientific director of nanoelectronics at Purdue's Birck Nanotechnology Center.

The ferroelectric transistor's changing polarity is read as 0 or 1, an operation needed for digital circuits to store information in binary code consisting of sequences of ones and zeroes.

The new technology is called FeTRAM, for ferroelectric transistor random access memory.

"We've developed the theory and done the experiment and also showed how it works in a circuit," he said.

Findings are detailed in a research paper that appeared this month in Nano Letters, published by the American Chemical Society.

The FeTRAM technology has nonvolatile storage, meaning it stays in memory after the computer is turned off. The devices have the potential to use 99 percent less energy than flash memory, a non-volatile computer storage chip and the predominant form of memory in the commercial market.

"However, our present device consumes more power because it is still not properly scaled," Das said. "For future generations of FeTRAM technologies one of the main objectives will be to reduce the power dissipation. They might also be much faster than another form of computer memory called SRAM."

The FeTRAM technology fulfills the three basic functions of computer memory: to write information, read the information and hold it for a long period of time.

"You want to hold memory as long as possible, 10 to 20 years, and you should be able to read and write as many times as possible," Das said. "It should also be low power to keep your laptop from getting too hot. And it needs to scale, meaning you can pack many devices into a very small area. The use of silicon nanowires along with this ferroelectric polymer has been motivated by these requirements."

The new technology also is compatible with industry manufacturing processes for complementary metal oxide semiconductors, or CMOS, used to produce computer chips. It has the potential to replace conventional memory systems.

A patent application has been filed for the concept.

The FeTRAMs are similar to state-of-the-art ferroelectric random access memories, FeRAMs, which are in commercial use but represent a relatively small part of the overall semiconductor market. Both use ferroelectric material to store information in a nonvolatile fashion, but unlike FeRAMS, the new technology allows for nondestructive readout, meaning information can be read without losing it.

This nondestructive readout is possible by storing information using a ferroelectric transistor instead of a capacitor, which is used in conventional FeRAMs.

This work was supported by the Nanotechnology Research Initiative (NRI) through Purdue's Network for Computational Nanotechnology (NCN), which is supported by National Science Foundation.

####

For more information, please click here

Contacts:
Writer:
Emil Venere
765-494-4709


Sources:
Saptarshi Das


Joerg Appenzeller
765 494-1076

Copyright © Purdue University

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Scientists join forces to reveal the mass and shape of single molecules April 27th, 2015

The 16th Trends in Nanotechnology International Conference (TNT 2015) unveils 25 Keynote Speakers: Call for abstracts open April 27th, 2015

Graphenea celebrates fifth anniversary April 27th, 2015

Sensor Designed in Iran Able to Remove Formaldehyde Gas from Environment April 27th, 2015

Govt.-Legislation/Regulation/Funding/Policy

Scientists join forces to reveal the mass and shape of single molecules April 27th, 2015

SEFCU, SUNY Poly CNSE Announce Winning Student-Led Teams in the 6th Annual $500,000 New York Business Plan Competition April 25th, 2015

Northwestern scientists develop first liquid nanolaser: Technology could lead to new way of doing 'lab on a chip' medical diagnostics April 25th, 2015

Electron spin brings order to high entropy alloys April 23rd, 2015

Chip Technology

Surface matters: Huge reduction of heat conduction observed in flat silicon channels April 23rd, 2015

Drexel materials scientists putting a new spin on computing memory April 22nd, 2015

Printing Silicon on Paper, with Lasers April 21st, 2015

Advances in molecular electronics: Lights on -- molecule on: Researchers from Dresden and Konstanz succeed in light-controlled molecule switching April 20th, 2015

Memory Technology

Heat makes electrons’ spin in magnetic superconductors April 26th, 2015

Northwestern scientists develop first liquid nanolaser: Technology could lead to new way of doing 'lab on a chip' medical diagnostics April 25th, 2015

Drexel materials scientists putting a new spin on computing memory April 22nd, 2015

Phonons, arise! Small electric voltage alters conductivity in key materials April 22nd, 2015

Discoveries

Scientists join forces to reveal the mass and shape of single molecules April 27th, 2015

Sensor Designed in Iran Able to Remove Formaldehyde Gas from Environment April 27th, 2015

Cacao Seed Extract Used in Production of Catalytic Nanoparticles April 27th, 2015

Heat makes electrons’ spin in magnetic superconductors April 26th, 2015

Announcements

Scientists join forces to reveal the mass and shape of single molecules April 27th, 2015

The 16th Trends in Nanotechnology International Conference (TNT 2015) unveils 25 Keynote Speakers: Call for abstracts open April 27th, 2015

Graphenea celebrates fifth anniversary April 27th, 2015

Sensor Designed in Iran Able to Remove Formaldehyde Gas from Environment April 27th, 2015

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More










ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project