Nanotechnology Now

Our NanoNews Digest Sponsors


Heifer International

Wikipedia Affiliate Button


DHgate

Home > Press > Imec processes first power devices on 200mm CMOS-compatible GaN-on-Si

Imec processes first power devices on 200mm CMOS-compatible GaN-on-Si
Imec processes first power devices on 200mm CMOS-compatible GaN-on-Si

Abstract:
Imec and its partners in the GaN industrial affiliation program (IIAP) have produced device-quality wafers with GaN/AlGaN layers on 200mm silicon wafers. With these wafers, functional GaN MISHEMTs were processed using standard CMOS tools. The used processes are compatible with the strict contamination rules in a standard CMOS processing line (e.g. no use of gold). These first GaN devices on 200mm wafers are an important milestone on the path to cost-effective production of power devices in high-productivity 200mm fabs.

Imec processes first power devices on 200mm CMOS-compatible GaN-on-Si

Leuven, Belgium | Posted on May 26th, 2011

GaN is a promising material for next-generation power devices with a performance beyond what is possible with silicon. Imec has recently succeeded in producing 200mm GaN-on-Si wafers with crack-free surfaces and a bow of less than 50µm. The wafers were made using an advanced MOCVD system from Applied Materials. The ability to use 200mm wafers is an important milestone, because it brings processing in reach of regular high-productivity 200mm fabs, allowing for an important cost reduction compared to processing smaller wafers on dedicated processing lines.

A second prerequisite for cost-effective processing, next to the wafer size, is that power devices can be fabricated with processes that are compatible with standard CMOS processes and tools. Imec proved this by processing its GaN-on-Si wafers using standard CMOS tools, yielding functional GaN MISHEMTs (metal-insulator-semiconductor HEMT). All equipment was verified for its capability to handle the wafers, and required only minimal adjustments in software and hardware. Conventionally, gold is used for ohmic contacts and gate structures in power devices, but it makes GaN processing incompatible with conventional CMOS processing. To overcome this, imec based the ohmic contact formation on an Au-free metallization system, and modified the Schottky gate to a gate dielectric based gold-free metal-insulator-semiconductor (MIS) structure. This introduction of the MISHEMT structure had the added advantage of reducing the high leakage current of conventional HEMTs.

####

About IMEC
Imec performs world-leading research in nanoelectronics. Imec leverages its scientific knowledge with the innovative power of its global partnerships in ICT, healthcare and energy. Imec delivers industry-relevant technology solutions. In a unique high-tech environment, its international top talent is committed to providing the building blocks for a better life in a sustainable society. Imec is headquartered in Leuven, Belgium, and has offices in Belgium, the Netherlands, Taiwan, US, China and Japan. Its staff of about 1,900 people includes more than 500 industrial residents and guest researchers. In 2010, imec's revenue (P&L) was 285 million euro. Further information on imec can be found at www.imec.be.

Imec is a registered trademark for the activities of IMEC International (a legal entity set up under Belgian law as a "stichting van openbaar nut”), imec Belgium (IMEC vzw supported by the Flemish Government), imec the Netherlands (Stichting IMEC Nederland, part of Holst Centre which is supported by the Dutch Government), imec Taiwan (IMEC Taiwan Co.) and imec China (IMEC Microelectronics (Shangai) Co. Ltd.).

For more information, please click here

Contacts:
Katrien Marent
Director of External Communications
T: +32 16 28 18 80
Mobile: +32 474 30 28 66

Copyright © IMEC

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Animal study shows flexible, dissolvable silicon device promising for brain monitoring: Other applications include post-operative observation for vascular, cardiac, and orthopaedic procedures, finds Penn study May 5th, 2016

Speedy ion conduction in solid electrolytes clears road for advanced energy devices May 5th, 2016

Engineers create a better way to boil water -- with industrial, electronics applications May 5th, 2016

Clues on the path to a new lithium battery technology: Charging produces highly reactive singlet oxygen in lithium air batteries May 5th, 2016

Chip Technology

Engineers create a better way to boil water -- with industrial, electronics applications May 5th, 2016

Molybdenum disulfide holds promise for light absorption: Rice researchers probe light-capturing properties of atomically thin MoS2 May 5th, 2016

A compact, efficient single photon source that operates at ambient temperatures on a chip: Highly directional single photon source concept is expected to lead to a significant progress in producing compact, cheap, and efficient sources of quantum information bits for future appls May 3rd, 2016

Spintronics for future information technologies: Spin currents in topological insulators controlled May 2nd, 2016

Announcements

Speedy ion conduction in solid electrolytes clears road for advanced energy devices May 5th, 2016

Engineers create a better way to boil water -- with industrial, electronics applications May 5th, 2016

Clues on the path to a new lithium battery technology: Charging produces highly reactive singlet oxygen in lithium air batteries May 5th, 2016

Unique nano-capsules promise the targeted drug delivery: Russian scientists created unique nano-capsules for the targeted drug delivery May 5th, 2016

Alliances/Trade associations/Partnerships/Distributorships

Electrically Conductive Graphene Ink Enables Printing of Biosensors April 23rd, 2016

Leti Extends Collaboration with Qualcomm on CoolCubeTM 3D Integration Technology for High-Density, High-Performance ICs: Collaboration Goals Include Building an Ecosystem To Take the Chip-stacking Technology from Design to Fabrication April 13th, 2016

FEI Partners with Five Pharmaceutical Companies, the Medical Research Council and the University of Cambridge to form Cryo-EM Research Consortium April 5th, 2016

Strem Chemicals and SONA Nanotech Sign Distribution Agreement for the World’s First Gold Nanorods Synthesized without CTAB February 24th, 2016

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







Car Brands
Buy website traffic