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Home > News > Nanomemory Devices Based on Nanotubes and Nanowires

November 23rd, 2010

Nanomemory Devices Based on Nanotubes and Nanowires

Abstract:
French scientists have made light-sensitive memory devices by combining carbon nanotubes and silicon nanowires.

As computer chips become ever smaller and more complex, scientists are interested in carbon-based components for devices such as memory chips. Nanoscale memory devices are key elements of future nanoelectronics circuits. For improved performance, the down-scaling of both the size and the programming speed are equally important.

Carbon nanotubes have already been used to make field-effect transistors (CNTFETs). These transistors are very sensitive to their environment and are thus also of interest as sensors. In a recent paper, French scientists led by Vincent Derycke at Saclay have shown that they can make very efficient CNTFETs that work as light sensors and memory elements together. "To be useful, devices based on nano-objects need to bring more than their small size; they need to show extra functionality when compared with conventional transistors" says Derycke.

Source:
materialsviews.com

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