Nanotechnology Now

Our NanoNews Digest Sponsors


Heifer International

Wikipedia Affiliate Button

Home > Press > SEMATECH Researchers to Present Breakthrough Innovations in III-V MOSFETs, FinFETs and Resistive RAMs at IEDM

Abstract:
Workshops and technical papers outline emerging solutions for critical dimension scaling and material technology

SEMATECH Researchers to Present Breakthrough Innovations in III-V MOSFETs, FinFETs and Resistive RAMs at IEDM

Austin, TX and Albany, NY | Posted on November 8th, 2010

Revealing research breakthroughs, engineers from SEMATECH's Front End Processes (FEP) program will present technical papers at the 56th annual IEEE International Electron Devices Meeting (IEDM) from December 6-8, 2010, at the Hilton in San Francisco, CA.

SEMATECH experts will report on resistive RAM (RRAM) memory technologies, advanced Fin and nanowire FETs for scaled CMOS devices, high mobility III-V channel materials on 200mm silicon wafers in an industry standard MOSFET flow, and future ultra-low power tunneling FET devices— highlighting significant breakthroughs that address the growing need for higher performance and low power devices.

Additionally, SEMATECH will host invitational pre‑conference workshops on December 5. The workshops will focus on technical and manufacturing gaps affecting promising emerging memory technologies and III-V channels on silicon. Co-sponsored by Tokyo Electron and Aixtron, these workshops will feature experts from industry and academia debating the challenges and opportunities in these areas in a series of presentations and panel discussions.

During the IEDM conference, SEMATECH's FEP experts will present research results at the following sessions:

* Session 6, Monday, Dec. 6 at 2 p.m.: Self-aligned III-V MOSFETS Heterointegrated on a 200 mm Si Substrate Using an Industry Standard Process Flow - demonstrates, for the first time, that III-V devices on silicon can be processed in a silicon pilot line with controlled contamination, uniformity and yield while demonstrating good device performance.

* Session 16, Tuesday, Dec. 7 at 9:05 a.m.: Prospect of Tunneling Green Transistor for 0.1V CMOS - investigates tunneling green transistors for low-voltage CMOS VLSI devices and circuits. Statistical data will show that sub-60mV/decade characteristics have been clearly demonstrated on 8 inch wafers. This work is an ongoing collaboration with Prof. Chenming Hu and his co-workers at University of California Berkeley. The results of the collaborative work will be presented by Professor Hu.

* Session 19, Tuesday, Dec. 7 at 4:25 p.m.: Metal Oxide RRAM Switching Mechanism Based on Conductive Filament Microscopic Properties - reports on critical conductive filament features controlling RRAM operations. The forming process is found to define the filament shape, which determines the temperature profile and, consequently, switching characteristics.

* Session 26, Wednesday, Dec. 8 at 9:55 a.m.: Contact Resistance Reduction to FinFET Source/Drain Using Dielectric Dipole Mitigated Schottky Barrier Height Tuning - shows, for the first time, a contact resistance reduction using dielectric dipole mitigated Schottky barrier height tuning on a FinFET source. This technique is very promising for emerging devices, alternative channel materials, and sub-22nm CMOSFETs, where the Schottky barrier height and resulting higher parasitic contact resistance are significant barriers for scaling.

* Session 34, Wednesday, Dec. 8 at 2 p.m.: Strained SiGe and Si FinFETs for High Performance Logic with SiGe/Si Stack on SOI - reports on a dual channel scheme for high mobility CMOS FinFETs.
The IEDM conference draws an international audience of industry professionals for an intensive exploration of design, manufacturing, physics, and modeling of semiconductors and other electronic devices. The conference spotlights leading work from the world's top electronics scientists and engineers; it is one of many industry forums SEMATECH uses to collaborate with scientists and engineers from corporations, universities, and other research institutions, many of whom are research partners.

####

About SEMATECH
For over 20 years, SEMATECH®, the global consortium of leading semiconductor manufacturers, has set global direction, enabled flexible collaboration, and bridged strategic R&D to manufacturing. Today, we continue accelerating the next technology revolution with our nanoelectronics and emerging technology partners.

For more information, please click here

Contacts:
Erica McGill
SEMATECH Media Relations
257 Fuller Roadm Suite 2200
Albany, NY 12203
o: 518-649-1041
m: 518-487-8256

Copyright © SEMATECH

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

New microchip demonstrates efficiency and scalable design: Increased power and slashed energy consumption for data centers August 24th, 2016

Tunneling nanotubes between neurons enable the spread of Parkinson's disease via lysosomes August 24th, 2016

New flexible material can make any window 'smart' August 23rd, 2016

University of Puerto Rico and NASA back in the news – XEI reports August 23rd, 2016

Chip Technology

New microchip demonstrates efficiency and scalable design: Increased power and slashed energy consumption for data centers August 24th, 2016

New theory could lead to new generation of energy friendly optoelectronics: Researchers at Queen's University Belfast and ETH Zurich, Switzerland, have created a new theoretical framework which could help physicists and device engineers design better optoelectronics August 23rd, 2016

Down to the wire: ONR researchers and new bacteria August 18th, 2016

Hexagonal boron nitride semiconductors enable cost-effective detection of neutron signals: Texas Tech University researchers demonstrate hexagonal boron nitride semiconductors as a cost-effective alternative for inspecting overseas cargo containers entering US ports August 17th, 2016

Memory Technology

Magnetic atoms arranged in neat rows: FAU physicists enable one-dimensional atom chains to grow August 5th, 2016

New metamaterials can change properties with a flick of a light-switch: Material can lead to new optical devices August 3rd, 2016

Making magnets flip like cats at room temperature: Heusler alloy NiMnSb could prove valuable as a new material for digital information processing and storage July 25th, 2016

Research team led by NUS scientists develop plastic flexible magnetic memory device: Novel technique to implant high-performance magnetic memory chip on a flexible plastic surface without compromising performance July 21st, 2016

Nanoelectronics

New microchip demonstrates efficiency and scalable design: Increased power and slashed energy consumption for data centers August 24th, 2016

Down to the wire: ONR researchers and new bacteria August 18th, 2016

Smarter self-assembly opens new pathways for nanotechnology: Brookhaven Lab scientists discover a way to create billionth-of-a-meter structures that snap together in complex patterns with unprecedented efficiency August 9th, 2016

Magnetic atoms arranged in neat rows: FAU physicists enable one-dimensional atom chains to grow August 5th, 2016

Announcements

New microchip demonstrates efficiency and scalable design: Increased power and slashed energy consumption for data centers August 24th, 2016

Tunneling nanotubes between neurons enable the spread of Parkinson's disease via lysosomes August 24th, 2016

New flexible material can make any window 'smart' August 23rd, 2016

University of Puerto Rico and NASA back in the news – XEI reports August 23rd, 2016

Events/Classes

Nanoparticles that speed blood clotting may someday save lives August 23rd, 2016

Impressive List of Doctors, Scientists Coming to Vail for Scientific Summit: The Second Vail Scientific Summit Convenes the Greatest Minds in Regenerative Medicine and Science August 17th, 2016

Harris & Harris Group to Host a Shareholder Update Call, Including a Presentation by One of Its Precision Health and Medicine Portfolio Companies, Muses Labs, Inc., on August 23, 2016 August 16th, 2016

Pokhara, the second largest city of Nepal, to host its first ever International Meeting on Material Sciences and Engineering August 15th, 2016

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







Car Brands
Buy website traffic