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Home > News > IEDM to feature 3-D chips, carbon nanotubes, FinFETs

September 23rd, 2010

IEDM to feature 3-D chips, carbon nanotubes, FinFETs

Abstract:
The IEEE International Electron Devices Meeting (IEDM) is almost here.

At the event, look for papers on 3-D chips, carbon nanotubes, FinFETs, MEMS, NAND and other topics. The event will be held in San Francisco from Dec. 6-8. Here's a sample of the papers:

On the logic side, TSMC will unveil a 22-/20-nm CMOS technology. It features FinFET transistor architectures, 193-nm immersion lithography, SiGe stressors, metal gates and high-k dielectrics. The FinFETs are built with dual-epitaxy and multiple stressors.

Source:
eetimes.com

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