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Kopin(R) Corporation (Nasdaq: KOPN), the world's leading producer of heterojunction bipolar transistor (HBT) wafers for smart phones and other mobile devices, announced today that it has received a two-year, Phase II Small Business Innovative Research (SBIR) contract for the development of Aluminum Indium Nitride-based high electron mobility transistors (AlInN HEMTs). The $750,000 award through the Missile Defense Agency (MDA) will leverage Kopin's established capability in Group III-Nitrides to enhance the performance and manufacturability of AlInN materials.
"This SBIR program by MDA validates the potential of the AlInN material system for high-performance electronic devices," stated Dr. John C.C. Fan, Kopin's President and CEO. "Our long-term objective is to commercialize AlInN-based electronic materials, which parallels our highly successful GaAs HBT wafer business. It is part of Kopin's strategy to leverage our expertise in III-V materials and nanoengineering to offer technology-differentiated solutions to our customers."
Dr. Wayne Johnson, Kopin's Vice President of Technology said, "The AlInN material system has shown great promise to extend the power and frequency capability of GaN-based HEMTs, but it is a challenging material to produce. During the Phase I effort, we demonstrated encouraging results in AlInN/GaN heterostructures including record-low sheet resistance. The goals of Phase II will involve optimization of the AlInN HEMT structures and fabrication of HEMT devices for X-band electronics applications in collaboration with leading-edge GaN foundries."
Safe Harbor Statement
Statements in this news release may be considered "forward-looking" statements under the "Safe Harbor" provisions of the Private Securities Litigation Reform Act of 1995, including without limitation, statements made relating to: the potential of the AlInN material system for high-performance electronic devices; and the Company's long-term objective to commercialize AlInN-based electronic materials. These statements involve a number of risks and uncertainties that could cause actual results to differ materially from those expressed in the forward-looking statements. These risks and uncertainties include, but are not limited to, technical, manufacturing or other issues that may prevent the AlInN materials system from achieving the desired performance; and other risk factors and cautionary statements listed in the Company's periodic reports and registration statements filed with the Securities and Exchange Commission, including the Annual Report on Form 10-K for the 12 months ended December 26, 2009, and the Company's subsequent filings with the Securities and Exchange Commission. You should not place undue reliance on any forward-looking statements, which speak only as of the date on which they are made. The Company undertakes no responsibility to update any of these forward-looking statements to reflect events or circumstances occurring after the date of this report.
About Kopin Corporation
Kopin Corporation produces lightweight, power-efficient, ultra-small liquid crystal displays and heterojunction bipolar transistors (HBTs) that are revolutionizing the way people around the world see, hear and communicate. Kopin has shipped more than 30 million displays for a range of consumer and military applications including digital cameras, personal video eyewear, camcorders, thermal weapon sights and night vision systems. The Company's unique HBTs, which help to enhance battery life, talk time and signal clarity, have been integrated into billions of wireless handsets as well as into WiFi, VoIP and high-speed Internet data transmission systems. Kopin's proprietary display and HBT technologies are protected by more than 200 global patents and patents pending. For more information, please visit Kopin's website at www.kopin.com.
Kopin and The NanoSemiconductor Company are trademarks of Kopin Corporation.
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