Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > Press > Imec welcomes new research partners to its GaN research program

Abstract:
Micron Technology, Applied Materials, and Ultratech have joined the imec industrial affiliation program (IIAP) on GaN-on-Si technology. This multi-partner R&D program focuses on the development of GaN-on-Si (gallium nitride-on-silicon) process and equipment technologies for manufacturing solid state lighting (e.g. LEDs) and next-generation power electronics components on 8-inch Si wafers.

Imec welcomes new research partners to its GaN research program

Leuven, Belgium | Posted on July 14th, 2010

Gallium nitride is a promising material for optoelectronics and advanced power electronic components, offering higher breakdown voltage and current capacity than silicon which is used in most components today. However, to make GaN-based devices a competitive alternative to silicon devices, GaN manufacturing technology needs to achieve the same economies of scale. Today, state-of-the-art LED manufacturing processes are typically performed on expensive 4 inch sapphire substrates. By depositing the GaN material on 8 inch silicon substrates, the productivity of GaN-based device manufacturing can be significantly increased. In addition, imec's GaN-on-Si program is utilizing an Applied Materials mainframe to develop 8 inch GaN-on-Si technology that is compatible with the CMOS fab infrastructure. This can further enhance productivity and result in lowering device cost.

The multi-partner GaN R&D program, launched in 2009, aims to reduce the cost and improve the performance of GaN devices. This program brings together leading integrated device manufacturers (IDMs), foundries, compound semiconductor companies, equipment suppliers and substrate suppliers to develop 8 inch GaN technology. The IIAP builds on imec's excellent track record in GaN epi-layer growth, new device concepts and CMOS device integration.

Micron Technology, Applied Materials, and Ultratech will actively participate in the IIAP at imec in Leuven, Belgium. This on-site participation enables the partner companies to have early access to next-generation LED and power electronics processes, equipment and technologies.

Rudi Cartuyvels, Vice President & General Manager Process Technology at imec stated: "We are excited to welcome 3 major companies to our GaN-on-Si IIAP. Less than a year after the program's launch in July 2009, we have assembled a strong consortium, including IDMs and equipment suppliers, and we expect more companies to join in the near future. This collaboration reflects the value of imec's research on GaN-on-Si as a reliable cost-effective solution for next-generation LED and power electronics devices."

####

About imec
Imec performs world-leading research in nanoelectronics. Imec leverages its scientific knowledge with the innovative power of its global partnerships in ICT, healthcare and energy. Imec delivers industry-relevant technology solutions. In a unique high-tech environment, its international top talent is committed to providing the building blocks for a better life in a sustainable society. Imec is headquartered in Leuven, Belgium, and has offices in Belgium, the Netherlands, Taiwan, US, China and Japan. Its staff of more than 1,750 people includes over 550 industrial residents and guest researchers. In 2009, imec's revenue (P&L) was 275 million euro. Further information on imec can be found at www.imec.be.

NOTE: Imec is a registered trademark for the activities of IMEC International (a legal entity set up under Belgian law as a "stichting van openbaar nut”), imec Belgium (IMEC vzw supported by the Flemish Government), imec the Netherlands (Stichting IMEC Nederland, part of Holst Centre which is supported by the Dutch Government), imec Taiwan (IMEC Taiwan Co.) and imec China (IMEC Microelectronics (Shangai) Co. Ltd.).

For more information, please click here

Contacts:
imec: Katrien Marent, Director of External Communications, T: +32 16 28 18 80, M: +32 474 30 28 66,

Barbara Kalkis, Maestro Marketing & PR, T: +1 408 996 9975, M: +1 408 529 4210,

Copyright © imec

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Nanoscale view of energy storage January 16th, 2017

Seeing the quantum future... literally: What if big data could help you see the future and prevent your mobile phone from breaking before it happened? January 16th, 2017

NUS researchers achieve major breakthrough in flexible electronics: New classes of printable electrically conducting polymer materials make better electrodes for plastic electronics and advanced semiconductor devices January 14th, 2017

Manchester scientists tie the tightest knot ever achieved January 13th, 2017

Display technology/LEDs/SS Lighting/OLEDs

Miniscule amounts of impurities in vacuum greatly affecting OLED lifetime December 30th, 2016

Trace metal recombination centers kill LED efficiency: UCSB researchers warn that trace amounts of transition metal impurities act as recombination centers in gallium nitride semiconductors November 3rd, 2016

Diamond nanothread: Versatile new material could prove priceless for manufacturing: Would you dress in diamond nanothreads? It's not as far-fetched as you might think November 3rd, 2016

Researchers surprised at the unexpected hardness of gallium nitride: A Lehigh University team discovers that the widely used semiconducting material is almost as wear-resistant as diamonds October 31st, 2016

Chip Technology

Seeing the quantum future... literally: What if big data could help you see the future and prevent your mobile phone from breaking before it happened? January 16th, 2017

NUS researchers achieve major breakthrough in flexible electronics: New classes of printable electrically conducting polymer materials make better electrodes for plastic electronics and advanced semiconductor devices January 14th, 2017

Nanoscale Modifications can be used to Engineer Electrical Contacts for Nanodevices January 13th, 2017

New laser based on unusual physics phenomenon could improve telecommunications, computing January 12th, 2017

Nanoelectronics

Nano-chimneys can cool circuits: Rice University scientists calculate tweaks to graphene would form phonon-friendly cones January 4th, 2017

Advance in intense pulsed light sintering opens door to improved electronics manufacturing December 23rd, 2016

Fast track control accelerates switching of quantum bits December 16th, 2016

GLOBALFOUNDRIES Demonstrates Industry-Leading 56Gbps Long-Reach SerDes on Advanced 14nm FinFET Process Technology: Proven ASIC IP solution will enable significant performance and power efficiency improvements for next-generation high-speed applications December 13th, 2016

Announcements

Nanoscale view of energy storage January 16th, 2017

Seeing the quantum future... literally: What if big data could help you see the future and prevent your mobile phone from breaking before it happened? January 16th, 2017

NUS researchers achieve major breakthrough in flexible electronics: New classes of printable electrically conducting polymer materials make better electrodes for plastic electronics and advanced semiconductor devices January 14th, 2017

Nanoscale Modifications can be used to Engineer Electrical Contacts for Nanodevices January 13th, 2017

Alliances/Trade associations/Partnerships/Distributorships

GLOBALFOUNDRIES Expands Partner Program to Speed Time-to-Market of FDX™ Solutions: Increased support affirms FDXcelerator™ Program’s vital role in promoting broader deployment of GLOBALFOUNDRIES’ FDX™ portfolio December 15th, 2016

Infrared instrumentation leader secures exclusive use of Vantablack coating December 5th, 2016

Leti and Grenoble Partners Demonstrate World’s 1st Qubit Device Fabricated in CMOS Process: Paper by Leti, Inac and University of Grenoble Alpes Published in Nature Communications November 28th, 2016

Mechanism for sodium storage in 2-D material: Tin selenide is an effective host for storing sodium ions, making it a promising material for sodium ion batteries October 27th, 2016

Research partnerships

Chemistry on the edge: Experiments at Berkeley Lab confirm that structural defects at the periphery are key in catalyst function January 13th, 2017

Recreating conditions inside stars with compact lasers: Scientists offer a new path to creating the extreme conditions found in stars, using ultra-short laser pulses irradiating nanowires January 12th, 2017

Zeroing in on the true nature of fluids within nanocapillaries: While exploring the behavior of fluids at the nanoscale, a group of researchers at the French National Center for Scientific Research discovered a peculiar state of fluid mixtures contained in microscopic channels January 11th, 2017

New active filaments mimic biology to transport nano-cargo: A new design for a fully biocompatible motility engine transports colloidal particles faster than diffusion with active filaments January 11th, 2017

NanoNews-Digest
The latest news from around the world, FREE




  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project