- About Us
- Career Center
- Nano-Social Network
- Nano Consulting
- My Account
Micron Technology, Applied Materials, and Ultratech have joined the imec industrial affiliation program (IIAP) on GaN-on-Si technology. This multi-partner R&D program focuses on the development of GaN-on-Si (gallium nitride-on-silicon) process and equipment technologies for manufacturing solid state lighting (e.g. LEDs) and next-generation power electronics components on 8-inch Si wafers.
Gallium nitride is a promising material for optoelectronics and advanced power electronic components, offering higher breakdown voltage and current capacity than silicon which is used in most components today. However, to make GaN-based devices a competitive alternative to silicon devices, GaN manufacturing technology needs to achieve the same economies of scale. Today, state-of-the-art LED manufacturing processes are typically performed on expensive 4 inch sapphire substrates. By depositing the GaN material on 8 inch silicon substrates, the productivity of GaN-based device manufacturing can be significantly increased. In addition, imec's GaN-on-Si program is utilizing an Applied Materials mainframe to develop 8 inch GaN-on-Si technology that is compatible with the CMOS fab infrastructure. This can further enhance productivity and result in lowering device cost.
The multi-partner GaN R&D program, launched in 2009, aims to reduce the cost and improve the performance of GaN devices. This program brings together leading integrated device manufacturers (IDMs), foundries, compound semiconductor companies, equipment suppliers and substrate suppliers to develop 8 inch GaN technology. The IIAP builds on imec's excellent track record in GaN epi-layer growth, new device concepts and CMOS device integration.
Micron Technology, Applied Materials, and Ultratech will actively participate in the IIAP at imec in Leuven, Belgium. This on-site participation enables the partner companies to have early access to next-generation LED and power electronics processes, equipment and technologies.
Rudi Cartuyvels, Vice President & General Manager Process Technology at imec stated: "We are excited to welcome 3 major companies to our GaN-on-Si IIAP. Less than a year after the program's launch in July 2009, we have assembled a strong consortium, including IDMs and equipment suppliers, and we expect more companies to join in the near future. This collaboration reflects the value of imec's research on GaN-on-Si as a reliable cost-effective solution for next-generation LED and power electronics devices."
Imec performs world-leading research in nanoelectronics. Imec leverages its scientific knowledge with the innovative power of its global partnerships in ICT, healthcare and energy. Imec delivers industry-relevant technology solutions. In a unique high-tech environment, its international top talent is committed to providing the building blocks for a better life in a sustainable society. Imec is headquartered in Leuven, Belgium, and has offices in Belgium, the Netherlands, Taiwan, US, China and Japan. Its staff of more than 1,750 people includes over 550 industrial residents and guest researchers. In 2009, imec's revenue (P&L) was 275 million euro. Further information on imec can be found at www.imec.be.
NOTE: Imec is a registered trademark for the activities of IMEC International (a legal entity set up under Belgian law as a "stichting van openbaar nut”), imec Belgium (IMEC vzw supported by the Flemish Government), imec the Netherlands (Stichting IMEC Nederland, part of Holst Centre which is supported by the Dutch Government), imec Taiwan (IMEC Taiwan Co.) and imec China (IMEC Microelectronics (Shangai) Co. Ltd.).
For more information, please click here
imec: Katrien Marent, Director of External Communications, T: +32 16 28 18 80, M: +32 474 30 28 66,
Barbara Kalkis, Maestro Marketing & PR, T: +1 408 996 9975, M: +1 408 529 4210,
Copyright © imecIf you have a comment, please Contact us.
Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.
|Related News Press|
News and information
Deep Space Industries and SFL selected to provide satellites for HawkEye 360’s Pathfinder mission: The privately-funded space-based global wireless signal monitoring system will be developed by Deep Space Industries and UTIAS Space Flight Laboratory May 26th, 2016
Display technology/LEDs/SS Lighting/OLEDs
First single-enzyme method to produce quantum dots revealed: Biological manufacturing process, pioneered by three Lehigh University engineers, produces equivalent quantum dots to those made chemically--but in a much greener, cheaper way May 9th, 2016
Gigantic ultrafast spin currents: Scientists from TU Wien (Vienna) are proposing a new method for creating extremely strong spin currents. They are essential for spintronics, a technology that could replace today's electronics May 25th, 2016
Dartmouth team creates new method to control quantum systems May 24th, 2016
Attosecond physics: A switch for light-wave electronics May 24th, 2016
Researchers demonstrate size quantization of Dirac fermions in graphene: Characterization of high-quality material reveals important details relevant to next generation nanoelectronic devices May 20th, 2016
New type of graphene-based transistor will increase the clock speed of processors: Scientists have developed a new type of graphene-based transistor and using modeling they have demonstrated that it has ultralow power consumption compared with other similar transistor devices May 19th, 2016
Albertan Science Lab Opens in India May 7th, 2016
The next generation of carbon monoxide nanosensors May 26th, 2016
Revealing the nature of magnetic interactions in manganese oxide: New technique for probing local magnetic interactions confirms 'superexchange' model that explains how the material gets its long-range magnetic order May 25th, 2016