Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > Press > Imec reports breakthrough in narrow pitch interconnects

Cross sectional TEM analysis of 20nm  pitch interconnects after integration into single damascene using a spacer defined double patterning approach
Cross sectional TEM analysis of 20nm pitch interconnects after integration into single damascene using a spacer defined double patterning approach

Abstract:
Imec sets major step towards 20nm half pitch interconnects with the realization of electrically functional copper lines embedded into silicon oxide using a spacer-defined double patterning approach.

Imec reports breakthrough in narrow pitch interconnects

Leuven, Belgium | Posted on July 14th, 2010

"We are very proud to be the world's first in developing and processing such small on-pitch working interconnects;" said Zsolt Tokei, program director interconnects at imec. "Spacer-defined (or self-aligned) double patterning has recently gained interest as the patterning technique for future FLASH memory devices. I'm confident that memory companies will benefit from this state-of-the-art result."

Scaling of interconnects towards 20nm half pitch faces many challenges. Double patterning lithography is needed since the metal lines cannot be realized in a single print. Therefore, a solution is needed for the actual design split of the structures and the alignment of the different masks. And, filling of (sub-)20nm lines is not possible using standard physical vapor deposition of TaN/Ta-based metallization. Moreover, control of line-edge roughness becomes increasingly difficult with further scaling. And finally, engineering of the patterning stack is required for optimal adhesion.

Imec demonstrated patterning and metallization of 20nm half pitch copper lines in silicon oxide with a TiN metal hard mask. The patterning is based on a sacrificial double hard mask and uses 3 photos (CORE, TRIM and PATCH) and four etch steps. The CORE photo defines dense lines at 40nm half pitch, which after trim, etch and spacer deposition results in 20nm half pitch spacer loops. The TRIM makes large openings to cut the spacer loops away by etch. And PATCH defines the final layout, electrical connections and bond pads. Overlay control is critical in order to end up with the designed test pattern. The dielectric spacing between the metal lines was accurately controlled thanks to the spacer-defined integration method. A Ruthenium-based metallization scheme was used to realize void-less filling.

Dielectric breakdown properties of the interconnects were measured and the results are very encouraging as the breakdown field is close to the intrinsic dielectric breakdown properties of the oxide and dielectric cap layers.

These results were obtained in cooperation with imec's key partners in its core CMOS programs: Intel, Micron, Panasonic, Samsung, TSMC, Sony, Fujitsu, Infineon, Qualcomm, ST Microelectronic, Amkor.

####

About imec
Imec performs world-leading research in nanoelectronics. Imec leverages its scientific knowledge with the innovative power of its global partnerships in ICT, healthcare and energy. Imec delivers industry-relevant technology solutions. In a unique high-tech environment, its international top talent is committed to providing the building blocks for a better life in a sustainable society. Imec is headquartered in Leuven, Belgium, and has offices in Belgium, the Netherlands, Taiwan, US, China and Japan. Its staff of more than 1,750 people includes over 550 industrial residents and guest researchers. In 2009, imec's revenue (P&L) was 275 million euro. Further information on imec can be found at www.imec.be.

NOTE: Imec is a registered trademark for the activities of IMEC International (a legal entity set up under Belgian law as a "stichting van openbaar nut), imec Belgium (IMEC vzw supported by the Flemish Government), imec the Netherlands (Stichting IMEC Nederland, part of Holst Centre which is supported by the Dutch Government), imec Taiwan (IMEC Taiwan Co.) and imec China (IMEC Microelectronics (Shangai) Co. Ltd.).

For more information, please click here

Contacts:
imec: Katrien Marent, Director, External Communications, T: +32 16 28 18 80, M: +32 474 30 28 66,

Barbara Kalkis, Maestro Marketing & PR, T: +1 408 996 9975, M: +1 408 529 4210,

Copyright © imec

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

'Gyroscope' molecules form crystal that's both solid and full of motion: New type of molecular machine designed by UCLA researchers could have wide-ranging applications in technology and science January 16th, 2018

The nanoscopic structure that locks up our genes January 16th, 2018

New exotic phenomena seen in photonic crystals: Researchers observe, for the first time, topological effects unique to an open system January 12th, 2018

Nanotube fibers in a jiffy: Rice University lab makes short nanotube samples by hand to dramatically cut production time January 11th, 2018

Chip Technology

'Gyroscope' molecules form crystal that's both solid and full of motion: New type of molecular machine designed by UCLA researchers could have wide-ranging applications in technology and science January 16th, 2018

New oxide and semiconductor combination builds new device potential: Researchers integrated oxide two-dimensional electron gases with gallium arsenide and paved the way toward new opto-electrical devices January 10th, 2018

STMicroelectronics Selects GLOBALFOUNDRIES 22FDX to Extend Its FD-SOI Platform and Technology Leadership : GFs FDX technology will enable ST to deliver high-performance, low-power products for next-generation consumer and industrial applications January 9th, 2018

Touchy nanotubes work better when clean: Rice, Swansea scientists show that decontaminating nanotubes can simplify nanoscale devices January 4th, 2018

Memory Technology

Quantum memory with record-breaking capacity based on laser-cooled atoms December 15th, 2017

Leti Breakthroughs Point Way to Significant Improvements in SoC Memories December 6th, 2017

Scientists make transparent materials absorb light December 1st, 2017

A material with promising properties: Konstanz scientist synthesizes an important ferromagnetic semiconductor November 25th, 2017

Nanoelectronics

Viewing atomic structures of dopant atoms in 3-D relating to electrical activity in a semiconductor December 28th, 2017

Electronically-smooth '3-D graphene': A bright future for trisodium bismuthide: Electronically-smooth nature of trisodium bismuthide makes it a viable alternative to graphene/h-BN December 22nd, 2017

Columbia engineers create artificial graphene in a nanofabricated semiconductor structure: Researchers are the first to observe the electronic structure of graphene in an engineered semiconductor; finding could lead to progress in advanced optoelectronics and data processing December 13th, 2017

GLOBALFOUNDRIES, Fudan Team to Deliver Next Generation Dual Interface Smart Card November 14th, 2017

Announcements

'Gyroscope' molecules form crystal that's both solid and full of motion: New type of molecular machine designed by UCLA researchers could have wide-ranging applications in technology and science January 16th, 2018

The nanoscopic structure that locks up our genes January 16th, 2018

New exotic phenomena seen in photonic crystals: Researchers observe, for the first time, topological effects unique to an open system January 12th, 2018

'Decorated' stem cells could offer targeted heart repair January 11th, 2018

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project