Nanotechnology Now

Our NanoNews Digest Sponsors





Heifer International

Wikipedia Affiliate Button


android tablet pc

Home > Press > Imec reports breakthrough in narrow pitch interconnects

Cross sectional TEM analysis of 20nm ˝ pitch interconnects after integration into single damascene using a spacer defined double patterning approach
Cross sectional TEM analysis of 20nm ˝ pitch interconnects after integration into single damascene using a spacer defined double patterning approach

Abstract:
Imec sets major step towards 20nm half pitch interconnects with the realization of electrically functional copper lines embedded into silicon oxide using a spacer-defined double patterning approach.

Imec reports breakthrough in narrow pitch interconnects

Leuven, Belgium | Posted on July 14th, 2010

"We are very proud to be the world's first in developing and processing such small on-pitch working interconnects;" said Zsolt Tokei, program director interconnects at imec. "Spacer-defined (or self-aligned) double patterning has recently gained interest as the patterning technique for future FLASH memory devices. I'm confident that memory companies will benefit from this state-of-the-art result."

Scaling of interconnects towards 20nm half pitch faces many challenges. Double patterning lithography is needed since the metal lines cannot be realized in a single print. Therefore, a solution is needed for the actual design split of the structures and the alignment of the different masks. And, filling of (sub-)20nm lines is not possible using standard physical vapor deposition of TaN/Ta-based metallization. Moreover, control of line-edge roughness becomes increasingly difficult with further scaling. And finally, engineering of the patterning stack is required for optimal adhesion.

Imec demonstrated patterning and metallization of 20nm half pitch copper lines in silicon oxide with a TiN metal hard mask. The patterning is based on a sacrificial double hard mask and uses 3 photos (CORE, TRIM and PATCH) and four etch steps. The CORE photo defines dense lines at 40nm half pitch, which after trim, etch and spacer deposition results in 20nm half pitch spacer loops. The TRIM makes large openings to cut the spacer loops away by etch. And PATCH defines the final layout, electrical connections and bond pads. Overlay control is critical in order to end up with the designed test pattern. The dielectric spacing between the metal lines was accurately controlled thanks to the spacer-defined integration method. A Ruthenium-based metallization scheme was used to realize void-less filling.

Dielectric breakdown properties of the interconnects were measured and the results are very encouraging as the breakdown field is close to the intrinsic dielectric breakdown properties of the oxide and dielectric cap layers.

These results were obtained in cooperation with imec's key partners in its core CMOS programs: Intel, Micron, Panasonic, Samsung, TSMC, Sony, Fujitsu, Infineon, Qualcomm, ST Microelectronic, Amkor.

####

About imec
Imec performs world-leading research in nanoelectronics. Imec leverages its scientific knowledge with the innovative power of its global partnerships in ICT, healthcare and energy. Imec delivers industry-relevant technology solutions. In a unique high-tech environment, its international top talent is committed to providing the building blocks for a better life in a sustainable society. Imec is headquartered in Leuven, Belgium, and has offices in Belgium, the Netherlands, Taiwan, US, China and Japan. Its staff of more than 1,750 people includes over 550 industrial residents and guest researchers. In 2009, imec's revenue (P&L) was 275 million euro. Further information on imec can be found at www.imec.be.

NOTE: Imec is a registered trademark for the activities of IMEC International (a legal entity set up under Belgian law as a "stichting van openbaar nut”), imec Belgium (IMEC vzw supported by the Flemish Government), imec the Netherlands (Stichting IMEC Nederland, part of Holst Centre which is supported by the Dutch Government), imec Taiwan (IMEC Taiwan Co.) and imec China (IMEC Microelectronics (Shangai) Co. Ltd.).

For more information, please click here

Contacts:
imec: Katrien Marent, Director, External Communications, T: +32 16 28 18 80, M: +32 474 30 28 66,

Barbara Kalkis, Maestro Marketing & PR, T: +1 408 996 9975, M: +1 408 529 4210,

Copyright © imec

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Study finds long-term survival of human neural stem cells transplanted into primate brain April 23rd, 2014

High-Performance, Low-Cost Ultracapacitors Built with Graphene and Carbon Nanotubes: Future devices based on technology could bridge gap between batteries and conventional capacitors in portable electronics and hybrid electric vehicles April 23rd, 2014

Guo Lab Shows Potential of RNA as Heat-resistant Polymer Material for Nanoarchitectures April 23rd, 2014

National Space Society Congratulates SpaceX on the Success of CRS-3 and the First Flight of the Falcon 9R April 22nd, 2014

Chip Technology

Harris & Harris Group Notes the Receipt of Proceeds From the Sale of Molecular Imprints' Semiconductor Business to Canon April 22nd, 2014

Progress made in developing nanoscale electronics: New research directs charges through single molecules April 21st, 2014

'Exotic' material is like a switch when super thin April 18th, 2014

Scientists open door to better solar cells, superconductors and hard-drives: Research enhances understanding of materials interfaces April 14th, 2014

Memory Technology

High-temperature plasmonics eyed for solar, computer innovation April 17th, 2014

Scientists open door to better solar cells, superconductors and hard-drives: Research enhances understanding of materials interfaces April 14th, 2014

First principles approach to creating new materials: Solid-state chemistry and theoretical physics combined to help discover new materials with useful properties April 8th, 2014

Domain walls in nanowires cleverly set in motion: Important prerequisite for the development of nano-components for data storage and sensor technology / Publication in Nature Communications April 8th, 2014

Nanoelectronics

Progress made in developing nanoscale electronics: New research directs charges through single molecules April 21st, 2014

Better solar cells, better LED light and vast optical possibilities April 12th, 2014

Catching the (Invisible) Wave: UC Santa Barbara researchers create a unique semiconductor that manipulates light in the invisible infrared/terahertz range, paving the way for new and enhanced applications April 11th, 2014

Nanotech Business Review 2013-2014 April 9th, 2014

Announcements

Study finds long-term survival of human neural stem cells transplanted into primate brain April 23rd, 2014

High-Performance, Low-Cost Ultracapacitors Built with Graphene and Carbon Nanotubes: Future devices based on technology could bridge gap between batteries and conventional capacitors in portable electronics and hybrid electric vehicles April 23rd, 2014

Guo Lab Shows Potential of RNA as Heat-resistant Polymer Material for Nanoarchitectures April 23rd, 2014

National Space Society Congratulates SpaceX on the Success of CRS-3 and the First Flight of the Falcon 9R April 22nd, 2014

NanoNews-Digest
The latest news from around the world, FREE







  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More














ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2014 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE