Nanotechnology Now

Our NanoNews Digest Sponsors





Heifer International

Wikipedia Affiliate Button


android tablet pc

Home > Press > Toshiba develops leading-edge silicon nanowire transistor for 16nm generation and beyond

Structure of a silicon nanowire transistor
Structure of a silicon nanowire transistor

Abstract:
Increasing 75% on-state current by reducing parasitic resistance

Toshiba develops leading-edge silicon nanowire transistor for 16nm generation and beyond

Tokyo | Posted on June 15th, 2010

Toshiba Corporation (TOKYO: 6502) today announced that it has developed a breakthrough technology for a nanowire transistor, a major candidate for a 3D structure transistor for system LSI in the 16nm generation and beyond. The company has achieved a 1mA/ým on-current, the world's highest level for a nanowire transistor, by reducing parasitic resistance and improving the on-current level by 75%. This is a major step towards practical application of nanowire transistors. This achievement will be presented at the 2010 Symposium on VLSI Technology in Hawaii, on June 17.

When the size of current planar transistors scales smaller, current leakage between the source and the drain at its off-stage (off-leakage) will become a critical problem in securing circuit reliability. To overcome this, transistors with a 3D structure, including silicon nanowire transistors, are being investigated as candidates for future generations of devices. The silicon nanowire transistor can suppress off-leakage and achieve further short-channel operation, because its thin wire-shaped silicon channel (nanowire channel) is effectively controlled by the surrounding gate. However, parasitic resistance in the nanowire-shaped source/drain, especially in the region under the gate sidewall, degrades the on-current.

Toshiba overcame this problem by optimizing gate fabrication and significantly reducing the thickness of the gate sidewall, from 30nm to 10nm. Low parasitic resistance was realized by epitaxial silicon growth on the source/drain with a thin gate sidewall, which leads to a 40% increase in on-current. The company also achieved a further 25% increase in current performance by changing the direction of the silicon nanowire channel from the <110> to <100> plane direction. Utilizing these technologies, Toshiba has demonstrated an industry-leading on-current level of 1mA/ým, when the off-current is 100nA/ým, a 75% increase in the on-current at the same off-current condition.

Toshiba will continue to promote development of the transistor towards establishing fundamental technologies for high-performance, low-power system LSIs.

This work was partly supported by New Energy and Industrial Technology Development Organization (NEDO) 's Development of Nanoelectronic Device Technology.

Information in the news releases, including product prices and specifications, content of services and contact information, is current on the date of the press announcement, but is subject to change without prior notice.

####

For more information, please click here

Copyright © Toshiba Corporation

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Novel Rocket Design Flight Tested: New Rocket Propellant and Motor Design Offers High Performance and Safety October 23rd, 2014

MEMS & Sensors Technology Showcase: Finalists Announced for MEMS Executive Congress US 2014 October 23rd, 2014

Nanoparticle technology triples the production of biogas October 23rd, 2014

SUNY Polytechnic Institute Invites the Public to Attend its Popular Statewide 'NANOvember' Series of Outreach and Educational Events October 23rd, 2014

Govt.-Legislation/Regulation/Funding/Policy

Novel Rocket Design Flight Tested: New Rocket Propellant and Motor Design Offers High Performance and Safety October 23rd, 2014

Strengthening thin-film bonds with ultrafast data collection October 23rd, 2014

Brookhaven Lab Launches Computational Science Initiative:Leveraging computational science expertise and investments across the Laboratory to tackle "big data" challenges October 22nd, 2014

Bipolar Disorder Discovery at the Nano Level: Tiny structures found in brain synapses help scientists better understand disorder October 22nd, 2014

Chip Technology

Strengthening thin-film bonds with ultrafast data collection October 23rd, 2014

NIST offers electronics industry 2 ways to snoop on self-organizing molecules October 22nd, 2014

Materials for the next generation of electronics and photovoltaics: MacArthur Fellow develops new uses for carbon nanotubes October 21st, 2014

Nitrogen Doped Graphene Characterized by Iranian, Russian, German Scientists October 21st, 2014

Nanoelectronics

NIST offers electronics industry 2 ways to snoop on self-organizing molecules October 22nd, 2014

Materials for the next generation of electronics and photovoltaics: MacArthur Fellow develops new uses for carbon nanotubes October 21st, 2014

Crystallizing the DNA nanotechnology dream: Scientists have designed the first large DNA crystals with precisely prescribed depths and complex 3D features, which could create revolutionary nanodevices October 20th, 2014

Imaging electric charge propagating along microbial nanowires October 20th, 2014

Announcements

Nanoparticle technology triples the production of biogas October 23rd, 2014

SUNY Polytechnic Institute Invites the Public to Attend its Popular Statewide 'NANOvember' Series of Outreach and Educational Events October 23rd, 2014

Advancing thin film research with nanostructured AZO: Innovnanoĺs unique and cost-effective AZO sputtering targets for the production of transparent conducting oxides October 23rd, 2014

Strengthening thin-film bonds with ultrafast data collection October 23rd, 2014

Events/Classes

Iran-Made Respiratory Nano Masks Provided to Hajj Pilgrims October 23rd, 2014

MEMS & Sensors Technology Showcase: Finalists Announced for MEMS Executive Congress US 2014 October 23rd, 2014

SUNY Polytechnic Institute Invites the Public to Attend its Popular Statewide 'NANOvember' Series of Outreach and Educational Events October 23rd, 2014

NanoTechnology for Defense (NT4D) October 22nd, 2014

NanoNews-Digest
The latest news from around the world, FREE





  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More














ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2014 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE