Nanotechnology Now

Our NanoNews Digest Sponsors





Heifer International

Wikipedia Affiliate Button


android tablet pc

Home > Press > Junctionless transistor outperforms nanowire MOSFET

Schematic representation of the cylindrical wrap-around gate nanowire
Schematic representation of the cylindrical wrap-around gate nanowire

Abstract:
The nanowire pinch-off field effect transistor (FET) or junctionless transistor is a uniformly doped nanowire without junctions with a wrap-around gate. The idea and basic working principle of the nanowire pinch-off transistor were developed in imec and already reported in 2007 and 2008. Recent modeling results obtained in imec for a GaAs and Si nanowire indicate that the nanowire pinch-off FET can outperform the nanowire MOSFET. These results combined with scalability and ease of processing make the junctionless transistor a true competitor for the nanowire MOSFET.

Junctionless transistor outperforms nanowire MOSFET

The Netherlands | Posted on April 21st, 2010

Several years ago, imec theoreticians developed the concept of the pinch-off nanowire FET. Originally, the idea was to avoid surface interactions such as surface roughness scattering or high-k surface phonon scattering wich degrade the charge carrier mobility, by moving the charge carriers away from the interface between the substrate and the insulator. The solution to this problem was to consider a nanowire where source, drain and channel are uniformly doped. For a n-type nanowire pinch-off FET, the charge carriers responsible for the current are delivered by the ionized donors. As the gate voltage is increased, the channel of the wire is depleted and, eventually, pinch-off will occur.

More detailed results about the idea and basic working principle of the nanowire pinch-off FET as proposed by imec can be found in:
[1] Sorée, B.; Magnus, W.; Pourtois, G. Analytical and self-consistent quantum mechanical model for a JFET nanowire. In: IWCE12. 2007. (8-10 October 2007; Amherst, NJ, USA.)
[2] Sorée, B.; Magnus, W.; Pourtois, G. Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode. JCEL. Vol. 7: (3) 380-383; 2008.

####

About imec
Imec is Europe’s largest independent research center in nanoelectronics and nano-technology. Its staff of more than 1,750 people includes over 550 industrial residents and guest researchers. Imec’s research is applied in better healthcare, smart electronics, sustainable energy, and safer transport.

For more information, please click here

Copyright © imec

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

Harris & Harris Group to Host Conference Call on Second-Quarter 2014 Financial Results on August 15, 2014 July 23rd, 2014

UCF Nanotech Spinout Developing Revolutionary Battery Technology: Power the Next Generation of Electronics with Carbon July 23rd, 2014

Deadline Announced for Registration in 7th Int'l Nanotechnology Festival in Iran July 23rd, 2014

A Crystal Wedding in the Nanocosmos July 23rd, 2014

Chip Technology

A Crystal Wedding in the Nanocosmos July 23rd, 2014

Nanometrics Announces Upcoming Investor Events July 22nd, 2014

Penn Study: Understanding Graphene’s Electrical Properties on an Atomic Level July 22nd, 2014

NUS scientists use low cost technique to improve properties and functions of nanomaterials: By 'drawing' micropatterns on nanomaterials using a focused laser beam, scientists could modify properties of nanomaterials for effective applications in photonic and optoelectric applicat July 22nd, 2014

Nanoelectronics

A Crystal Wedding in the Nanocosmos July 23rd, 2014

3-D nanostructure could benefit nanoelectronics, gas storage: Rice U. researchers predict functional advantages of 3-D boron nitride July 15th, 2014

IBM Announces $3 Billion Research Initiative to Tackle Chip Grand Challenges for Cloud and Big Data Systems: Scientists and engineers to push limits of silicon technology to 7 nanometers and below and create post-silicon future July 10th, 2014

Carbodeon enables 20 percent increase in polymer thermal filler conductivity with 0.03 wt.% nanodiamond additive at a lower cost than with traditional fillers: Improved materials and processes enable nanodiamond cost reductions of up to 70 percent for electronics and LED app July 9th, 2014

Announcements

Harris & Harris Group to Host Conference Call on Second-Quarter 2014 Financial Results on August 15, 2014 July 23rd, 2014

UCF Nanotech Spinout Developing Revolutionary Battery Technology: Power the Next Generation of Electronics with Carbon July 23rd, 2014

Deadline Announced for Registration in 7th Int'l Nanotechnology Festival in Iran July 23rd, 2014

A Crystal Wedding in the Nanocosmos July 23rd, 2014

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More














ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project







© Copyright 1999-2014 7th Wave, Inc. All Rights Reserved PRIVACY POLICY :: CONTACT US :: STATS :: SITE MAP :: ADVERTISE