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Home > Press > Graphene Transistors Introduced by Iranian Scientists

Abstract:
Engineers at Sharif University of Technology, Iran, devised a technique to form energy gaps in graphene energy bands so that they were enabled to switch off electric current in graphene.

Graphene Transistors Introduced by Iranian Scientists

Tehran, Iran | Posted on August 31st, 2009

According to the Iranian Nanotechnology Initiative Council (INIC), Graphene is a 2D crystal structure with hexagonal arrangements composed of carbon atoms also called honeycomb crystal lattice. In this semiconductor, there are no energy gaps between conduction bands and valence bands.

This absence brings about some unique electronic, optical and mechanical properties in graphene which promotes its functions/applications.

In this structure, one can control electrical conductivity by applying voltage on the external gate while the lack of energy gap makes it impossible to cut the conduction.

Behnaz Gharekhanlou, one of the researchers believes that the problem can be tackled by forming energy gaps.

"One way to form energy gaps is to make neutral defects inside graphene crystal. Neutral defects are free spaces shaped by removal of some carbon atoms from graphene network," Gharekhanlou underlined.

She explained that when these defects are built in proper patterns, it is possible to control the formed energy gaps in Dirac dots.

Varying the population or positions of atoms removed from graphene network affects energy gaps. In other words, this can smooth the path to production of electronic pieces based on diodes or transistors made up of graphene.

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