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Home > News > Researchers: Ferroelectric DRAM smaller, faster than flash

August 15th, 2009

Researchers: Ferroelectric DRAM smaller, faster than flash

Abstract:
Researchers at Yale University and the Semiconductor Research Corp. (SRC) claim that ferroelectrics are more appropriate for replacing DRAM than flash. Current DRAM technology has to be refreshed every few milliseconds; ferroelectric materials could last minutes without freshing.

Source:
eetimes.com

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