Nanotechnology Now

Our NanoNews Digest Sponsors

Heifer International

Wikipedia Affiliate Button

Home > Press > IMEC launches new industrial affiliation program on GaN-on-Si technology

IMEC's SiN/AlGaN/GaN double heterostructure field effect
transistor, demonstrating breakdown voltages up to 1000V.
IMEC's SiN/AlGaN/GaN double heterostructure field effect transistor, demonstrating breakdown voltages up to 1000V.

Abstract:
IMEC today announces the launch of a new industrial affiliation program (IIAP) that will focus on the development of GaN technology for both power conversion and solid state lighting
applications. An important goal of the program is to lower GaN technology cost by using large-diameter GaN-on-Si and hence by leveraging on the Si scale of economics.

IMEC launches new industrial affiliation program on GaN-on-Si technology

Leuven, Belgium | Posted on July 14th, 2009

The scope of the IIAP is to develop high-voltage, low-loss, high-power switching devices based on large-diameter (up to 200mm) GaN-on-Si technology. Potential applications include high-power switching in solar converters, motor drives, hybrid electrical vehicles or switch mode power supplies.

High-voltage power devices are traditionally based on Si MOSFET structures. However, for a number of applications, they are reaching intrinsic material limits. GaN-based devices can overcome these limits due to a unique combination of excellent transport properties and high electrical field operation capability. The few GaN devices today on the market are based on AlGaN/GaN high-electron mobility transistor (HEMT) structures and are normally-on devices, designed for RF applications, e.g. in wireless communication. Within the IIAP, the next-generation of power electronics
components is envisaged, requiring the development of normally-off devices (for safety reasons) with high-voltage breakdown (600-1000V) and low on-resistance, operating in enhancement mode.

A second sub-program will exploit GaN-on-Si technology for the development of high-efficiency high-power white LEDs. Key issues are enhancing the external and internal quantum efficiencies and enabling high current operation. III-nitrides in general exhibit excellent light emission properties in a very broad range of the visible and ultraviolet (UV) spectrum. However, LED illumination by these devices can only become broadly acceptable if new volume manufacturing technologies are developed that enable 150lm/W LEDs.

Common challenge for power electronics and optoelectronics is cost reduction. "GaN on large-diameter Si wafers (from 100mm and 150mm towards 200mm) in combination with CMOS compatible processes offers the best perspective to create economically viable solutions"; said Marianne Germain, GaN program director. "While very few players can today process GaN on large-diameter Si wafers, IMEC has recently shown in collaboration with AIXTRON crack-free GaN growth on 200mm wafers. Also for other challenges, the IIAP can build on IMEC's 10 years' experience in GaN technology, including unique skills in epi-layer growth, new device concept, device integration and a thin-film textured LED technology for high-efficiency III-nitride LEDs."

IMEC invites both Integrated Device Manufacturers and Compound Semiconductor Industry to join the program where they can build on IMEC's extensive expertise in GaN and benefit from a sharing of cost, risk, talent and IP.

####

About IMEC
IMEC is a world-leading independent research center in nanoelectronics and nanotechnology. IMEC vzw is headquartered in Leuven, Belgium, has a sister company in the Netherlands, IMEC-NL, offices in the US, China and Taiwan, and representatives in Japan. Its staff of more than 1650 people includes about 550 industrial residents and guest researchers. In 2008, its revenue (P&L) was EUR 270 million.

IMEC's More Moore research aims at semiconductor scaling towards sub-32nm nodes. With its More than Moore research, IMEC looks into technologies for nomadic embedded systems, wireless autonomous transducer solutions, biomedical electronics, photovoltaics, organic electronics and GaN power electronics.

IMEC's research bridges the gap between fundamental research at universities and technology development in industry. Its unique balance of processing and system know-how, intellectual property portfolio, state-of-the-art infrastructure and its strong network worldwide position IMEC as a key partner for shaping technologies for future systems.

For more information, please click here

Contacts:
Katrien Marent
IMEC Director of External Communications
T: +32 16 28 18 80
Mobile : +32 474 30 28 66,

Barbara Kalkis
Maestro Marketing & Public Relations

T: +1 408 996 9975, M: +1 408 529 4210

Copyright © IMEC

If you have a comment, please Contact us.

Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.

Bookmark:
Delicious Digg Newsvine Google Yahoo Reddit Magnoliacom Furl Facebook

Related News Press

News and information

GLOBALFOUNDRIES and Chengdu Partner to Expand FD-SOI Ecosystem in China: More than $100M investment to establish a center of excellence for FDXTM FD-SOI design May 23rd, 2017

Zap! Graphene is bad news for bacteria: Rice, Ben-Gurion universities show laser-induced graphene kills bacteria, resists biofouling May 22nd, 2017

Leti Will Demo World’s-first WVGA 10-µm Pitch GaN Microdisplays for Augmented Reality Video at Display Week in Los Angles: Invited Paper also Will Present Leti’s Success with New Augmented Reality Technology That Reduces Pixel Pitch to Less than 5 Microns May 22nd, 2017

Graphene-nanotube hybrid boosts lithium metal batteries: Rice University prototypes store 3 times the energy of lithium-ion batteries May 19th, 2017

Plasmon-powered upconversion nanocrystals for enhanced bioimaging and polarized emission: Plasmonic gold nanorods brighten lanthanide-doped upconversion superdots for improved multiphoton bioimaging contrast and enable polarization-selective nonlinear emissions for novel nanoscal May 19th, 2017

Display technology/LEDs/SS Lighting/OLEDs

Leti Will Demo World’s-first WVGA 10-µm Pitch GaN Microdisplays for Augmented Reality Video at Display Week in Los Angles: Invited Paper also Will Present Leti’s Success with New Augmented Reality Technology That Reduces Pixel Pitch to Less than 5 Microns May 22nd, 2017

Chip Technology

GLOBALFOUNDRIES and Chengdu Partner to Expand FD-SOI Ecosystem in China: More than $100M investment to establish a center of excellence for FDXTM FD-SOI design May 23rd, 2017

Plasmon-powered upconversion nanocrystals for enhanced bioimaging and polarized emission: Plasmonic gold nanorods brighten lanthanide-doped upconversion superdots for improved multiphoton bioimaging contrast and enable polarization-selective nonlinear emissions for novel nanoscal May 19th, 2017

Oddball enzyme provides easy path to synthetic biomaterials May 17th, 2017

Racyics Launches ‘makeChip’ Design Service Platform for GLOBALFOUNDRIES’ 22FDX® Technology: Racyics will provide IP and design services as a part of the foundry’s FDXcelerator™ Partner Program May 11th, 2017

Nanoelectronics

Oddball enzyme provides easy path to synthetic biomaterials May 17th, 2017

Racyics Launches ‘makeChip’ Design Service Platform for GLOBALFOUNDRIES’ 22FDX® Technology: Racyics will provide IP and design services as a part of the foundry’s FDXcelerator™ Partner Program May 11th, 2017

Researchers “iron out” graphene’s wrinkles: New technique produces highly conductive graphene wafers April 3rd, 2017

A big leap toward tinier lines: Self-assembly technique could lead to long-awaited, simple method for making smaller microchip patterns March 27th, 2017

Announcements

GLOBALFOUNDRIES and Chengdu Partner to Expand FD-SOI Ecosystem in China: More than $100M investment to establish a center of excellence for FDXTM FD-SOI design May 23rd, 2017

Zap! Graphene is bad news for bacteria: Rice, Ben-Gurion universities show laser-induced graphene kills bacteria, resists biofouling May 22nd, 2017

Leti Will Demo World’s-first WVGA 10-µm Pitch GaN Microdisplays for Augmented Reality Video at Display Week in Los Angles: Invited Paper also Will Present Leti’s Success with New Augmented Reality Technology That Reduces Pixel Pitch to Less than 5 Microns May 22nd, 2017

Graphene-nanotube hybrid boosts lithium metal batteries: Rice University prototypes store 3 times the energy of lithium-ion batteries May 19th, 2017

Alliances/Trade associations/Partnerships/Distributorships

California Research Alliance by BASF establishes more than 25 research projects in three years April 26th, 2017

BASF and Landa partner to create revolutionary pigments for automotive coatings: The alliance combines BASF innovations with Landa nano-pigment technology April 5th, 2017

Leti Announces EU/South Korean Project for World’s First 5G-system Prototype: Coinciding with the 2018 Winter Games in PyeongChang, Korea, Prototype Will Be First Time State-of-the-art Terrestrial Wireless Communication Is Seamlessly Combined with Disruptive Satellite Communicati April 4th, 2017

ATTOPSEMI Technology Joins FDXcelerator Program to Deliver Advanced Non-Volatile Memory IP to GLOBALFOUNDRIES 22 FDX® Technology Platform: Leading-edge I-fuse™ brings higher reliability, smaller cell size and ease of programmability for consumer, automotive, and IoT applications March 27th, 2017

NanoNews-Digest
The latest news from around the world, FREE



  Premium Products
NanoNews-Custom
Only the news you want to read!
 Learn More
NanoTech-Transfer
University Technology Transfer & Patents
 Learn More
NanoStrategies
Full-service, expert consulting
 Learn More











ASP
Nanotechnology Now Featured Books




NNN

The Hunger Project